用于无线应用的高性能InGaP电源HBT技术

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239974

T. Oka, K. Fujita, K. Shirakawa, N. Takahashi, Y. Liu, M. Yamashita, H. Kawamura, M. Hasegawa, H. Koh, K. Kagoshima, H. Kijima, K. Sakuno

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引用次数: 2

摘要

我们回顾了用于5GHz无线应用的InGaP功率hbt的技术特点。其特点包括自对准基触点和基台面形成工艺，位于多指晶体管之间的小尺寸通孔，以及用于减少失真的偏置和反馈电路。这些技术提高了增益和线性度，在功率放大器中产生更高的功率附加效率(PAE)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-performance InGaP power HBT technologies for wireless applications

We review the technological features of our InGaP power HBTs for 5GHz wireless application. The features include self-aligned base-contact and base-mesa formation process, small-sized via holes located between multi-finger transistors, and bias and feedback circuits for the reduction of distortion. These technologies improve both gain and linearity, producing higher power added efficiency (PAE) in power amplifiers.

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2003 International Symposium on Compound Semiconductors

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