利用金属/透明导电氧化物与p-GaN形成高质量欧姆接触

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239903

J. Song, Dong‐Seok Leem, K. Kim, T. Seong

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引用次数: 0

摘要

我们报道了有前途的Ni/透明导电氧化物，用于生产高质量的p-GaN欧姆接触。结果表明，在空气环境中，在450 ~ 600℃下退火2 min后，接触电阻较低，为10/sup -5/-10/sup -6/ /spl ω /cm/sup 2/。根据x射线光发射光谱和俄歇电子能谱结果，描述了欧姆的形成机制。

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Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides

We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600/spl deg/C for 2 min in air ambient result low specific contact resistances of 10/sup -5/-10/sup -6/ /spl Omega/cm/sup 2/. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.

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2003 International Symposium on Compound Semiconductors

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