掺铒氮化镓的结构和磁性能

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239932

H. Bang, J. Sawahata, M. Tsunemi, J. Seo, H. Yanagihara, E. Kita, Katsuhiro Akimoto

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引用次数: 3

摘要

本文研究了掺铒氮化镓的结构和磁性能。然而，在所有测量温度下，在零场周围都观察到明显的台阶。这些结果表明铁磁有序共存。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Structural and magnetic properties of Er doped GaN

In this paper, structural and magnetic properties of Er-doped GaN were studied. Er-doped GaN shows paramagnetic character, however, clear steps around zero fields were observed at all measured temperatures. These results indicates that the coexistence of ferromagnetic order.

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2003 International Symposium on Compound Semiconductors

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