Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

Abstract

In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.