Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239921

Wen‐Hao Chang, T. Hsu, Wen-Yen Chen, Hsiang-Szu Chang, N. Yeh, J. Chyi

引用次数: 0

Abstract

The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.

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InAs/GaAs自组装量子点中电子和空穴能级的电导映射

研究了InAs/GaAs自组装量子点中电子能级和空穴能级的导纳谱。从点中电子和空穴能级的电导映射，可以分辨出清晰的- p-壳层结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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