Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET

In 2001, the authors demonstrated performance of GaAs MOS-diodes with nm-thin directly oxidated layers fromed by W & ozone process 111. The thin oxide layers are effective in suppressing gate leakage current. However, a MOSFET based on it has hysteresis in current-voltage curves, and a dip in transconductance at a gate voltage around the flatband voltage 121. H. Ikoma et al. showed good influence of nitridation upon oxidated GaAs surfaces [3]. We also demonstrated in 2002 excellent influences of oxi-nitridation (nitrogen plasma treatment after UV & ozone oxidation) of (100) GaAs surfaces, results of which were characterized from view points of 0 S interface structure (observed by E M ) , photoluminescence and electrical performances of MIS diodes 14, 51. The process gives a very flat interface between a fm insulating GaON layer and a GaAs with very little crystallographic disorder. The nitridation, applied to an oxidated GaAs surface, improves the photoluminescence intensity, decreases a leakage current, and improves C-V characteristics. Figure 1 shows C-V curves of MIS diodes with nm-thin 8 hrs oxidated layer (a) and 8 hrs-nitridated-after-8 hrsoxidation layer (b), respectively. The nitridation improves Schottky barrier height from 0.5 eV to 1.1 eV, and decreases the capacitance in the forward voltage region. We applied this process to forming the gate insulating f h s of GaAs-MISFETs and obtained excellent results which demonstrate reproducibility of the above experiment. We used n W = 3E17Icc. t = 400 nm)/S.LGaAs epitaxial wafer. After gate recess-etching with a gate electrode pattern, oxidation by the W & ozone for 4 hours and 0 to 2 hours nitridation by helicon plasma system at an RF power of 50 W were applied before forming A1 gate electrode. The gate length is about 1 p n (designed). Thickness of the insulator, measured with a monitor wafer is ahout 8 nm. Figure 2 shows drain currents vs. drain voltage of simply 4 hr-oxidated gate MOSFET (a) and the 4 hr-oxi-2 hr-nitridated gate MISFET (b), for drain voltage up and down conditions. The gate insulator formed only the oxidation (a) shows large hysteresis, while that formed by oxi-nitridation (b) shows no hysteresis, and better pinch-off. Figure 3 shows gate voltage dependence of transconductances of the MOSF'ET, 4 hr-oxi-1 hr-nitridated, and 4 hr-oxi-2 hr-nitridated MISFETs. Both of the transconductance and the pinchi-off performances are drastically improved by the nitridation process. The maximum transconductance (110 mS/mm) is obtained at a gate voltage of 1.1 V. Which suggests that the MIS junction has very little defects and extra charges at and near the IS interface. [ l ] T. Sugimura et al., Solid-state Electronics, 43, pp.1571-1576 81999) [Z] K. Iiyama et al., IEEETrans. Electron Devices, 49,11, pp.1856-1862 (20029 [31 H. Ikoma et al., J. Appl. Phys., 85, pp.32343240 (1999) 141 N. C. Paul et al., Cod. Proc. IPRM 2002, Stockholm, pp.217-220 (2002) 1.51 N. C. Paul et al., Jpn. J. Appl. Phys., will be published in near future.