{"title":"极化掺杂iii -氮化物中的电子自旋分裂","authors":"V. Litvinov","doi":"10.1109/ISCS.2003.1239885","DOIUrl":null,"url":null,"abstract":"Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron spin splitting in polarization-doped III-nitrides\",\"authors\":\"V. Litvinov\",\"doi\":\"10.1109/ISCS.2003.1239885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron spin splitting in polarization-doped III-nitrides
Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.
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