A. Chitnis, J. Zhang, V. Adivarahan, M. Shatalov, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan
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Milliwatt operation of sapphire based 340 nm UV LEDs with quaternary AlInGaN quantum wells at room and cryogenic temperatures
In this report, the LED structure was grown over basal plane sapphire substrate and consisted of high quality bottom n/sup +/-AlGaN clad layer followed with three pairs of AlInGaN/AlGaN MQW active region. A record optical power of 0.405 mW at 50 mA of dc bias was measured for the packaged LED, which translates to an external quantum efficiency of 0.22%. The electrical and optical characteristics of the AlInGaN LED were then measured over a temperature range from 10K-300K.
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