金属有机化学气相沉积InGaNAs/GaN多量子阱中In组成与TBAs流速的关系

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239918

H. Na, Hyun Jin Kim, Soon‐Yong Kwon, E. Yoon, C. Sone, Yongjo Park

{"title":"金属有机化学气相沉积InGaNAs/GaN多量子阱中In组成与TBAs流速的关系","authors":"H. Na, Hyun Jin Kim, Soon‐Yong Kwon, E. Yoon, C. Sone, Yongjo Park","doi":"10.1109/ISCS.2003.1239918","DOIUrl":null,"url":null,"abstract":"InGaNAs/GaN MQW structures were grown on GaN/sapphire substrates by low-pressure MOCVD. We investigated the structural and optical properties of InGaNAs MQW and correlation between As concentration and In composition using X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectra.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition\",\"authors\":\"H. Na, Hyun Jin Kim, Soon‐Yong Kwon, E. Yoon, C. Sone, Yongjo Park\",\"doi\":\"10.1109/ISCS.2003.1239918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaNAs/GaN MQW structures were grown on GaN/sapphire substrates by low-pressure MOCVD. We investigated the structural and optical properties of InGaNAs MQW and correlation between As concentration and In composition using X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectra.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用低压MOCVD技术在GaN/蓝宝石衬底上生长了InGaNAs/GaN MQW结构。利用x射线衍射(XRD)、透射电子显微镜(TEM)、二次离子质谱(SIMS)和光致发光(PL)光谱研究了InGaNAs MQW的结构和光学性质，以及As浓度与In组成的相关性。

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Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition

InGaNAs/GaN MQW structures were grown on GaN/sapphire substrates by low-pressure MOCVD. We investigated the structural and optical properties of InGaNAs MQW and correlation between As concentration and In composition using X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectra.

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2003 International Symposium on Compound Semiconductors

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