J. Carlin, J. Dorsaz, C. Zellweger, S. Gradečak, M. Ilegems
{"title":"作为氮化镓基光电器件的高折射率对比材料","authors":"J. Carlin, J. Dorsaz, C. Zellweger, S. Gradečak, M. Ilegems","doi":"10.1109/ISCS.2003.1239890","DOIUrl":null,"url":null,"abstract":"High crystalline quality AlInN was grown near lattice-matched to GaN. It shows /spl ap/7% index contrast with GaN. It is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN DBR with over 90% reflectivity.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AlInN as high-index-contrast material for GaN-based optoelectronics\",\"authors\":\"J. Carlin, J. Dorsaz, C. Zellweger, S. Gradečak, M. Ilegems\",\"doi\":\"10.1109/ISCS.2003.1239890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High crystalline quality AlInN was grown near lattice-matched to GaN. It shows /spl ap/7% index contrast with GaN. It is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN DBR with over 90% reflectivity.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AlInN as high-index-contrast material for GaN-based optoelectronics
High crystalline quality AlInN was grown near lattice-matched to GaN. It shows /spl ap/7% index contrast with GaN. It is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN DBR with over 90% reflectivity.
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