{"title":"sb基ii型中红外带间级联激光器的研究进展","authors":"Rui Q. Yang, C. Hill, B. Yang, John Liu","doi":"10.1109/ISCS.2003.1239980","DOIUrl":null,"url":null,"abstract":"In this paper, we report the progress of Sb-based type-II mid-IR interband cascade lasers interms of both high operation temperatures and low threshold current density. The maximum cw operation temperature is readily raised with the fabrication of narrow-stripe lasers. The detailed characteristics of these lasers and updated results are presented.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Progress of Sb-based type-II mid-IR interband cascade lasers\",\"authors\":\"Rui Q. Yang, C. Hill, B. Yang, John Liu\",\"doi\":\"10.1109/ISCS.2003.1239980\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the progress of Sb-based type-II mid-IR interband cascade lasers interms of both high operation temperatures and low threshold current density. The maximum cw operation temperature is readily raised with the fabrication of narrow-stripe lasers. The detailed characteristics of these lasers and updated results are presented.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239980\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239980","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Progress of Sb-based type-II mid-IR interband cascade lasers
In this paper, we report the progress of Sb-based type-II mid-IR interband cascade lasers interms of both high operation temperatures and low threshold current density. The maximum cw operation temperature is readily raised with the fabrication of narrow-stripe lasers. The detailed characteristics of these lasers and updated results are presented.