Electron spin splitting in polarization-doped III-nitrides

Abstract

Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.