Effects of thermal annealing on GaInNAs QDs grown on GaAs [001]

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239911

A. Nishikawa, Y. G. Hong, C. Tu

引用次数: 1

Abstract

The effects of thermal annealing on optical properties of GaInNAs QDs were studied. QD samples were grown on GaAS [001] substrates by gas-source molecular beam epitaxy (GSMBE) equipped with a rf plasma nitrogen source. The PL spectra of GaInNAs QDs with RTA treatment at 600, 700, and 800 /spl deg/c annealing for 10s.

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热退火对GaAs上生长GaInNAs量子点的影响[001]

研究了热退火对GaInNAs量子点光学性质的影响。采用配备射频等离子体氮源的气源分子束外延(GSMBE)在GaAS[001]衬底上生长QD样品。经过RTA处理的GaInNAs量子点在600、700和800 /spl℃退火10s后的PL光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 International Symposium on Compound Semiconductors

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