薄GaAs帽层对InAs/InGaAs/InP量子点光学性能的影响

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239939

Kwangmin Park, H. Hwang, H. Lee, Y. J. Jeon, H.M. Cheong, E. Yoon

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引用次数: 0

摘要

我们研究了薄的GaAs封盖层(5-10单层)对InAs量子点光学性质的影响。薄盖层生长后，在570 /sup o/C或610 /sup o/C的温度下沉积70 nm厚的顶部InGaAs盖层。在量子点上插入薄的砷化镓帽层导致光致发光峰蓝移。此外，通过插入10 ML GaAs层，PL峰的半最大全宽度(FWHM)从35 mev降低到20 mev。

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Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot

We have studied the influence of thin GaAs capping layer (5-10 monolayers) on optical properties of InAs QDs. After the growth of thin GaAs capping layer, the 70 nm thick top InGaAs capping layer was deposited at 570 /sup o/C or 610 /sup o/C. The insertion of thin GaAs cap layer on QDs led to blue shift of peak of photoluminescence (PL). In addition, full width at half maximum (FWHM) of the PL peak decreases from 35 mev to 20 mev by inserting 10 ML GaAs layer.

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2003 International Symposium on Compound Semiconductors

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