高功率GaN/AlGaN微波场效应管中相干GHz声子产生的光学检测

Jung-Hoon Song, Qiang Zhang, W. Patterson, A. Nurmikko, M. Uren, K. Hilton, R. Balmer, T. Martin
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引用次数: 0

摘要

微波GaN/AlGaN场效应管通道中随时间变化的电子密度由于屏蔽了巨大的压电场而增加了GHz相干声子的产生。这种能量释放的非热传播通道可能与未来的高功率器件相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET
The time-varying electron density in the channel of a microwave GaN/AlGaN FET gives raise to GHz coherent phonon generation due to the screening of the giant piezoelectric fields, which we measure optically. Such propagating nonthermal channels of energy release may be of relevance to future high power devices.
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