Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m

Abstract

We present optical characterstics of InAsN/GaAs QD samples that contain a small amount of nitrogen inside InAs QD and emit a narrow photoluminescence (PL) signal at 1.3 /spl mu/m . The small addition of nitrogen into an InAs layer lowers the energy gap and at the same time decreases the lattice constant.