发射速度为1.3 /spl mu/m的InAsN/GaAs量子点的光学特性

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239910

Y. Jang, N. Kim, K. Park, W. Jeong, J.W. Jang, D. Lee

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引用次数: 1

摘要

我们研究了含有少量氮的InAsN/GaAs量子点样品的光学特性，该样品在1.3 /spl mu/m下发出窄光致发光(PL)信号。少量的氮加入到InAs层中，降低了能隙，同时降低了晶格常数。

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Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m

We present optical characterstics of InAsN/GaAs QD samples that contain a small amount of nitrogen inside InAs QD and emit a narrow photoluminescence (PL) signal at 1.3 /spl mu/m . The small addition of nitrogen into an InAs layer lowers the energy gap and at the same time decreases the lattice constant.

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2003 International Symposium on Compound Semiconductors

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