双量子阱AlGaAs激光器子带能级的光反射和自激电子拉曼散射测定

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239954

W. Susaki, S. Ukawa, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, Y. Mihashi

{"title":"双量子阱AlGaAs激光器子带能级的光反射和自激电子拉曼散射测定","authors":"W. Susaki, S. Ukawa, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, Y. Mihashi","doi":"10.1109/ISCS.2003.1239954","DOIUrl":null,"url":null,"abstract":"In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering\",\"authors\":\"W. Susaki, S. Ukawa, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, Y. Mihashi\",\"doi\":\"10.1109/ISCS.2003.1239954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文利用光反射率(PR)测定了AlGaAs分离-束缚-异质结构(SCH)双量子阱(DQW)层的子带能级，并与采用相同DQW结构但不同波导厚度的激光器的自激ERS测定的子带能级进行了比较。两种测量方法确定的子带能级非常一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering

In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 International Symposium on Compound Semiconductors

自引率

0.00%

发文量