Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements

Abstract

Ion-implanted Al/sub x/Ga/sub 1-x/N has been studied much less compared to GaN, and thus very little is known about implanted Al/sub x/Ga/sub 1-x/N. Therefore, systematic electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N have been made as a function of ion dose, anneal temperature, and anneal time.