氮化半导体中纳米级缺陷的表征和缓解

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239915

E. Yu, E. J. Miller, D. Schaadt, B. Simpkins

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引用次数: 0

摘要

外延生长的iii族氮化物半导体材料的典型特征是高浓度的点缺陷和扩展缺陷。扫描探针技术、原子力显微镜(AFM)、导电原子力显微镜(c-AFM)、扫描开尔文探针力显微镜(SKPM)和扫描电容显微镜(SCM)表征了AlGaN/GAN异质结构场效应晶体管和n-GaN Schotty二极管的结构和电子特性。

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Nanoscale characterization and mitigation of defects in nitride semiconductors

Epitaxially grown Group III-nitride semiconductor materials are typically characterized by high concentrations of point and extended defects. Scanning probe techniques, atomic force microscopy (AFM), conductive atomic force microscopy (c-AFM), scanning Kelvin probe force microscopy (SKPM), and scanning capacitance microscopy (SCM) to characterise the structural and electronic properties of AlGaN/GAN heterostructure field-effect transistor and n-GaN Schotty diodes.

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2003 International Symposium on Compound Semiconductors

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