利用霍尔效应和光致发光研究si注入Al/sub -x/ Ga/sub - 1-x/N的电和光学活化

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239901

Mee-Yi Ryu, E. A. Chitwood, Y. Yeo, R. Hengehold, T. Steiner

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引用次数: 0

摘要

与GaN相比，离子注入Al/sub x/Ga/sub 1-x/N的研究要少得多，因此对离子注入Al/sub x/Ga/sub 1-x/N的了解很少。因此，系统地研究了si注入Al/sub x/Ga/sub 1-x/N对离子剂量、退火温度和退火时间的影响。

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Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements

Ion-implanted Al/sub x/Ga/sub 1-x/N has been studied much less compared to GaN, and thus very little is known about implanted Al/sub x/Ga/sub 1-x/N. Therefore, systematic electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N have been made as a function of ion dose, anneal temperature, and anneal time.

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2003 International Symposium on Compound Semiconductors

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