宽禁带半导体室温铁磁性的离子注入

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239930

S. Pearton, C. Abernathy, F. Ren, D. Norton, A. Hebard, J. Zavada, R. Wilson

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引用次数: 1

摘要

本文综述了利用离子注入制备具有室温铁磁性的(Ga,Mn)N、(Ga,Mn)P、(Zn,Mn)O、(Si,Mn)C和(Zn,Mn)SiGeN/sub 2/等稀磁性半导体的最新进展、磁性的来源及其在自旋偏振光发射机和自旋场效应晶体管等新型器件中的潜在应用。

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Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors

We summarize recent progress in creating dilute magnetic semiconductors such as (Ga,Mn)N, (Ga,Mn)P, (Zn,Mn)O, (Si,Mn)C, and (Zn,Mn)SiGeN/sub 2/ exhibiting room temperature ferromagnetism through the use of ion implantation, the origins of the magnetism and its potential applications in novel device such as spin-polarized light emitters and spin field effect transistors.

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2003 International Symposium on Compound Semiconductors

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