Nanoscale characterization and mitigation of defects in nitride semiconductors

Abstract

Epitaxially grown Group III-nitride semiconductor materials are typically characterized by high concentrations of point and extended defects. Scanning probe techniques, atomic force microscopy (AFM), conductive atomic force microscopy (c-AFM), scanning Kelvin probe force microscopy (SKPM), and scanning capacitance microscopy (SCM) to characterise the structural and electronic properties of AlGaN/GAN heterostructure field-effect transistor and n-GaN Schotty diodes.