{"title":"自组装InAs/GaAs量子点系综带内偶极子的温度依赖取向","authors":"Zhonghui Chen, Eui-Tae Kim, A. Madhukar","doi":"10.1109/ISCS.2003.1239922","DOIUrl":null,"url":null,"abstract":"The temperature dependence of the orientation of intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots (QDs) embedded in n-i(QDs)-n configuration was reported.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles\",\"authors\":\"Zhonghui Chen, Eui-Tae Kim, A. Madhukar\",\"doi\":\"10.1109/ISCS.2003.1239922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature dependence of the orientation of intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots (QDs) embedded in n-i(QDs)-n configuration was reported.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239922\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239922","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles
The temperature dependence of the orientation of intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots (QDs) embedded in n-i(QDs)-n configuration was reported.