IEEE Electron Device Letters最新文献_第6页

Novel G-Band Slot-Loaded Folded Waveguide Traveling Wave Tube 新型g波段槽载折叠波导行波管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-21 DOI: 10.1109/LED.2025.3563026

Luqi Zhang;Wenqiang Lei;Rui Song;Yi Jiang;Jun Guo;Xu Yao;Dimin Sun;Peng Hu;Guowu Ma

引用次数: 0

MetaRGBX-Net: RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor CMOS图像传感器的RGB灵敏度和串扰预测

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-18 DOI: 10.1109/LED.2025.3562529

JangHyeon Lee;ByoungGyu Kim;Yongkeun Lee

{"title":"MetaRGBX-Net: RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor","authors":"JangHyeon Lee;ByoungGyu Kim;Yongkeun Lee","doi":"10.1109/LED.2025.3562529","DOIUrl":"https://doi.org/10.1109/LED.2025.3562529","url":null,"abstract":"The CMOS image sensor (CIS) underpins optical applications, enabling high-resolution imaging across the visible and near-infrared spectra. Advances in nanofabrication have enhanced pixel density, improving resolution, but as pixel dimensions approach the diffraction limit, maintaining optical sensitivity without performance trade-offs remains challenging. Nanophotonic solutions, like nanophotonic-based color routers, address these limitations. This study builds on MetaRGB-Net, a machine learning framework achieving 98% prediction accuracy in optimizing RGB sensitivity. We introduce MetaRGBX-Net, which employs separate neural networks to optimize both RGB sensitivity and cross-talk, achieving 95% and 98% prediction accuracy, respectively. This enables precise optimization of critical parameters and serves as a foundation for Bayesian optimization to refine metasurface designs, ensuring efficient light routing through RGB channels while minimizing cross-talk. MetaRGBX-Net streamlines metasurface design and provides a scalable foundation for next-generation CIS applications in IoT, biomedical imaging, and environmental monitoring.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1235-1238"},"PeriodicalIF":4.1,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10970058","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Modulation Bandwidth of Parallel Micro-LED Arrays for Visible Light Communication 提高并行微led阵列可见光通信调制带宽

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-14 DOI: 10.1109/LED.2025.3556406

Wen-An Guo;Ming-He Wan;Shi-Biao Liu;Zhong Liu;Ting-Wei Lu;Guo-Long Chen;Yi-Jun Lu;Hao-Chung Kuo;Ting-Zhu Wu;Zhong Chen

引用次数: 0

Leakage Current Optimization Based on Conduction Paths Modulation by Interfacial Layer in Ge-Te OTS Selector 基于界面层传导路径调制的Ge-Te OTS选择器漏电流优化

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-10 DOI: 10.1109/LED.2025.3559553

Zixuan Liu;Lun Wang;Jiangxi Chen;Zhuoran Zhang;Jinyu Wen;Hao Tong;Xiangshui Miao

{"title":"Leakage Current Optimization Based on Conduction Paths Modulation by Interfacial Layer in Ge-Te OTS Selector","authors":"Zixuan Liu;Lun Wang;Jiangxi Chen;Zhuoran Zhang;Jinyu Wen;Hao Tong;Xiangshui Miao","doi":"10.1109/LED.2025.3559553","DOIUrl":"https://doi.org/10.1109/LED.2025.3559553","url":null,"abstract":"Ovonic threshold switch (OTS) selector plays an important role in suppressing the leakage current in 3D phase change memory. In this work, we optimized the OTS selector by applying an interfacial layer and proposed that the reduction of conduction paths explains how the interfacial layer affects the leakage current. The leakage current decreased by 120nA after applying the interfacial layer. The OTS selector with an interfacial layer maintains the same level of electrical performance in terms of speed and endurance. The devices show fast speed (6 ns) and good endurance (<inline-formula> <tex-math>$10^{{9}}text {)}$ </tex-math></inline-formula>. Through the comparative analysis of the leakage current, ON-state current, and drift characteristic, the results all illustrate the conduction paths reduction. From the activation energy extracted by Poole-Frenkel fitting, we found that the interfacial layer introduced a barrier into the selector. Considering the area dependence of the leakage current, we proposed that the reduction in leakage current was due to the reduction in conduction paths. This work contributes to the improvement of the performance of the OTS selector and provides a way to suppress leakage current in the OTS selector.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"924-927"},"PeriodicalIF":4.1,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy 基于竞争抗氧化策略的高效红色锡基钙钛矿发光二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-08 DOI: 10.1109/LED.2025.3558338

Yingqun Gong;Yuxin Shi;Sitao Huo;Lin Wang;Xiaofei Zhang;Lingmei Kong;Sheng Wang;Yingguo Yang;Xuyong Yang

{"title":"Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy","authors":"Yingqun Gong;Yuxin Shi;Sitao Huo;Lin Wang;Xiaofei Zhang;Lingmei Kong;Sheng Wang;Yingguo Yang;Xuyong Yang","doi":"10.1109/LED.2025.3558338","DOIUrl":"https://doi.org/10.1109/LED.2025.3558338","url":null,"abstract":"Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn2+ oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn2+ and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn2+, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI6 octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m−2. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"948-951"},"PeriodicalIF":4.1,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Miniaturized Integrated Bandstop Filter With High In-Band Performance Based on Substrate Integrated Coaxial Line 基于基片集成同轴线的高性能微型化集成带阻滤波器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-08 DOI: 10.1109/LED.2025.3558979

Danyu Yang;Yuandan Dong

引用次数: 0

AlGaN/GaN Heterojunction Bipolar Transistors With Record fᴛ/fₘₐₓ=21.6 /4.23 GHz AlGaN/GaN异质结双极晶体管，记录f <e:1> /f <s:1>ₓ=21.6 /4.23 GHz

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-08 DOI: 10.1109/LED.2025.3558540

Lian Zhang;Jianxing Xu;Jiaheng He;Zhe Cheng;Weibin Wang;Chunyan Liu;Xiaodong Wang;Changxin Mi;Wei Tan;Yun Zhang

{"title":"AlGaN/GaN Heterojunction Bipolar Transistors With Record fᴛ/fₘₐₓ=21.6 /4.23 GHz","authors":"Lian Zhang;Jianxing Xu;Jiaheng He;Zhe Cheng;Weibin Wang;Chunyan Liu;Xiaodong Wang;Changxin Mi;Wei Tan;Yun Zhang","doi":"10.1109/LED.2025.3558540","DOIUrl":"https://doi.org/10.1109/LED.2025.3558540","url":null,"abstract":"We report a novel GaN heterojunction bipolar transistor (HBT) featuring n-AlGaN/n+-GaN emitter layers, achieving a record <inline-formula> <tex-math>${f}_{T}/{f}_{textit {MAX}} =21.6$ </tex-math></inline-formula>/4.23 GHz at the current density of 12.7 mA and V<inline-formula> <tex-math>${}_{text {CE}}=10$ </tex-math></inline-formula>V. This is the first time that the frequency of GaN HBTs have been extended to the S-band. The exceptional performance is attributed to three advancements in material and device fabrication: 1) regrowth emitter technology is used to achieve base ohmic contact, thereby reducing the parasitic base resistance; 2) An n+-GaN emitter cap layer is used to achieve an ultra-low specific contact resistance of <inline-formula> <tex-math>$1.35times 10^{-{7}}Omega cdot $ </tex-math></inline-formula>cm2, effectively lowering the total emitter resistance, thereby reducing the collector charging time <inline-formula> <tex-math>$tau _{C}$ </tex-math></inline-formula>; 3) down-scaling technologies, which reduce the parasitic base resistance and the base-collector (BC) junction capacitance, also helps to increasing the <inline-formula> <tex-math>${f}_{T}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${f}_{textit {max}}$ </tex-math></inline-formula>. The device demonstrates a power density of 1.31 MW/cm2, which is the highest for GaN HBTs on sapphire. These results underscore the potential of GaN HBTs for high-power, high-efficiency RF applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"912-915"},"PeriodicalIF":4.1,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interface-Controlled Performance in VLWIR Blocked Impurity Band Photodetectors VLWIR阻塞杂质带光电探测器的界面控制性能

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-07 DOI: 10.1109/LED.2025.3558427

Tao Zhang;Wenrui Wei;Jiaxiang Guo;Kun Zhang;Ruolin Huang;Wei Xiong;Deyu Zhu;Rong Zhao;Shikun Duan;Ning Li;Peng Wang;Weida Hu

{"title":"Interface-Controlled Performance in VLWIR Blocked Impurity Band Photodetectors","authors":"Tao Zhang;Wenrui Wei;Jiaxiang Guo;Kun Zhang;Ruolin Huang;Wei Xiong;Deyu Zhu;Rong Zhao;Shikun Duan;Ning Li;Peng Wang;Weida Hu","doi":"10.1109/LED.2025.3558427","DOIUrl":"https://doi.org/10.1109/LED.2025.3558427","url":null,"abstract":"High-sensitivity very long-wavelength infrared (VLWIR) blocked impurity band (BIB) photodetectors are essential for atmospheric monitoring and astronomical observation. However, there is a gap between the traditional BIB model and the actual BIB structure, and the interface effects have not been clarified. In this work, a BIB interface model is proposed, and the potential barrier distribution of the interfacial layer and its influence on the photodetector dark current and response during operation are clarified through simulations and experiments. Phosphorus-doped silicon BIB structures with sharp and gradual interfaces were fabricated and analyzed. Experimental results demonstrate that sharp interface BIB photodetectors achieve five orders of magnitude reduction in dark current, maintaining dark current below 1 pA at forward bias up to 2.7 V, and achieving a peak blackbody detectivity exceeding <inline-formula> <tex-math>$1times 10^{{12}}$ </tex-math></inline-formula> cm Hz1/2·W−1 at <inline-formula> <tex-math>$28.3~mu $ </tex-math></inline-formula>m. In contrast, gradual interface photodetectors improved the detection of low-energy photons at longer wavelengths. These findings provide critical insights into interface engineering in BIB photodetectors and offer guidelines for optimizing VLWIR detection performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"956-959"},"PeriodicalIF":4.1,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient and Stable Perovskite Light-Emitting Diodes Enabled by Oriented Growth Regulation 定向生长调控实现高效稳定的钙钛矿发光二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-07 DOI: 10.1109/LED.2025.3558271

Kun Zhang;Xiaofei Zhang;Chengxi Zhang;Jie Feng;Lingmei Kong;Sheng Wang;Yingguo Yang;Lin Wang;Xuyong Yang

{"title":"Efficient and Stable Perovskite Light-Emitting Diodes Enabled by Oriented Growth Regulation","authors":"Kun Zhang;Xiaofei Zhang;Chengxi Zhang;Jie Feng;Lingmei Kong;Sheng Wang;Yingguo Yang;Lin Wang;Xuyong Yang","doi":"10.1109/LED.2025.3558271","DOIUrl":"https://doi.org/10.1109/LED.2025.3558271","url":null,"abstract":"Metal halide perovskites have demonstrated remarkable progress in optoelectronic applications, including solar cells and light-emitting diodes (LEDs). However, the long-term stability of perovskite LEDs (PeLEDs) remains a critical challenge, impeding their practical applications and commercialization. Herein, we regulate the growth kinetics of perovskites in liquid-solid stages by introducing 2,3,4,5, 6-pentafluorophenylphosphonic acid (PFBPA) into the precursor solution. The PFBPA molecules will create a protective passivation layer by coordinating with uncoordinated lead (Pb2+) on the perovskite surface, which regulates the growth of perovskite crystals during the liquid-solid stages and results in the formation of uniform perovskite films with reduced grain size. Moreover, the coordination of PFBPA with Pb2+ also improves the moisture resistance of perovskites, favoring the operational stability of devices. The resulting PeLED devices achieved a maximum brightness of 12426 cd m-2, a peak external quantum efficiency (EQE) of 22.6%, and a remarkable operational stability with a half-lifetime exceeding 1187 hours at initial luminance of 100 cd m-2.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"952-955"},"PeriodicalIF":4.1,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination 具有氢等离子体保护阵列终端的多kv AlGaN/GaN异质结肖特基势垒二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-07 DOI: 10.1109/LED.2025.3558166

Dawei Wang;Hunter D. Ellis;Dinusha Herath Mudiyanselage;Ziyi He;Bingcheng Da;Imteaz Rahaman;Izak Baranowski;Siddhant Gangwal;Dragica Vasileska;Kai Fu;Houqiang Fu

引用次数: 0