IEEE Electron Device Letters最新文献_第6页

A Mechanism-Informed Predictive Model for Mean and Sigma of 3D nand Threshold-Voltage Distributions at Extreme Temperatures 极端温度下三维nand阈值电压分布的均值和西格玛预测模型

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-17 DOI: 10.1109/LED.2026.3704253

Yicheng Ke;Minghui Dong;Linlin Cai;Wangyong Chen

{"title":"A Mechanism-Informed Predictive Model for Mean and Sigma of 3D nand Threshold-Voltage Distributions at Extreme Temperatures","authors":"Yicheng Ke;Minghui Dong;Linlin Cai;Wangyong Chen","doi":"10.1109/LED.2026.3704253","DOIUrl":"https://doi.org/10.1109/LED.2026.3704253","url":null,"abstract":"Emerging aerospace and other mission-critical applications require charge-trap 3D <sc>nand flash to operate reliably over wide and extreme temperature ranges, where the cross-temperature evolution of threshold-voltage (VTH) distributions is strongly nonlinear and trajectory-dependent. In this work, we propose a mechanism-informed compact model that jointly predicts the mean and sigma of 3D <sc>nand VTH distributions by decomposing trap, barrier, and mobility contributions. The model is validated across programmed states under high-temperature program/low-temperature read and low-temperature program/high-temperature read trajectories over −55 °C to 125 °C. It achieves accurate full-window fitting for both descriptors, while restricted-window fitting and held-out-region prediction demonstrate robust extrapolation into extreme-temperature regimes. Ablation analysis shows that the barrier term contributes most to prediction accuracy, followed by the trap term, while the mobility term provides a smaller but visible contribution. Compared with empirical baselines, the proposed model reduces the average prediction RMSE by 66.9% in extreme-temperature and nonlinear regions, providing a compact framework for distribution-level prediction and read-threshold optimization in 3D <sc>nand.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1567-1570"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148748959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Changes to the Editorial Board 编辑委员会的变动

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-28 DOI: 10.1109/LED.2026.3707331

Kelin J. Kuhn

引用次数: 0

Corrections to “Suppressing Interface Traps Density of Top-Gate MoS2 Transistor via H2O Presoak for HfO2” 对“利用H2O预浸HfO2抑制顶栅MoS2晶体管界面陷阱密度”的修正

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-29 DOI: 10.1109/LED.2026.3706248

Kaiyue He;Zhanqi Li;Yijing Yang;Yifu Sun;Lingyu Zhang;Ruhai Liu;Maguang Zhu

引用次数: 0

Changes to the Editorial Board 编辑委员会的变动

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-28 DOI: 10.1109/LED.2026.3707330

Kelin J. Kuhn

引用次数: 0

IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-28 DOI: 10.1109/LED.2026.3709239

引用次数: 0

Halogen Substitution in Lead-Free Double Perovskites Toward Ultralow-Dose X-Ray Detection and Signal Decoding 无铅双钙钛矿中卤素取代对超低剂量x射线探测和信号解码的影响

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-25 DOI: 10.1109/LED.2026.3705883

Lixia Wang;Yamin Chang;Yiran Liu;Xu Wang;Shiwei Zhang;Jiayi Sun;Junfang Wang;Ziquan Yuan;Yongle Pan;Hao Wang;Wenjuan Wei;Xiangyue Meng

{"title":"Halogen Substitution in Lead-Free Double Perovskites Toward Ultralow-Dose X-Ray Detection and Signal Decoding","authors":"Lixia Wang;Yamin Chang;Yiran Liu;Xu Wang;Shiwei Zhang;Jiayi Sun;Junfang Wang;Ziquan Yuan;Yongle Pan;Hao Wang;Wenjuan Wei;Xiangyue Meng","doi":"10.1109/LED.2026.3705883","DOIUrl":"https://doi.org/10.1109/LED.2026.3705883","url":null,"abstract":"X-ray communication (XCOM) presents a promising alternative for wireless communication in strongly shielded environments, but its practical implementation is impeded by the absence of sensitive, low-noise X-ray detectors for low-dose conditions. Here, we address this challenge through a molecular-level crystal engineering strategy, designing a novel two-dimensional double perovskite, (I-PA)4AgBiI8, by substituting the terminal group of the A-site organic cation with a halogen atom. This halogen-substitution strategy stabilizes the perovskite structure against competing low-dimensional phases, leading to a high dielectric constant (<inline-formula> <tex-math>$varepsilon _{text {r}} =38.1$ </tex-math></inline-formula>), an ultralow exciton binding energy (<inline-formula> <tex-math>${E}_{text {b}} =50.4$ </tex-math></inline-formula> meV), and a dense crystal (3.452 g cm<inline-formula> <tex-math>${}^{-{3}}text {)}$ </tex-math></inline-formula>. These intrinsic properties enable the X-ray detector to achieve outstanding sensitivity (<inline-formula> <tex-math>$1.79times 10^{{4}},, mu $ </tex-math></inline-formula>C Gy<inline-formula> <tex-math>${}_{text {air}}^{-{1}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-{2}}text {)}$ </tex-math></inline-formula> and a record-low detection limit (0.012 nGyair s<inline-formula> <tex-math>${}^{-{1}}text {)}$ </tex-math></inline-formula>. The device also exhibits excellent operational stability, evidenced by a large ion migration activation energy (735 meV). Finally, proof-of-concept low-dose X-ray signal decoding is demonstrated using Morse code and pixel-pattern transmission through an 18.8 mm aluminum shield at an ultralow dose rate of 157 nGy s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1611-1614"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

EDS Calendar Meetings EDS会议日程表

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-28 DOI: 10.1109/LED.2026.3709235

引用次数: 0

Mid-Wave Infrared InAsSb Barrier Detectors Monolithically Grown on Silicon 单片生长的中波红外InAsSb势垒探测器

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-02 DOI: 10.1109/LED.2026.3707297

Keming Cheng;Dong Han;Weifan Ji;Kuangwu Yan;Chuang Li;Kai Shen;Ting Wang;Jianjun Zhang;Jiang Wu

{"title":"Mid-Wave Infrared InAsSb Barrier Detectors Monolithically Grown on Silicon","authors":"Keming Cheng;Dong Han;Weifan Ji;Kuangwu Yan;Chuang Li;Kai Shen;Ting Wang;Jianjun Zhang;Jiang Wu","doi":"10.1109/LED.2026.3707297","DOIUrl":"https://doi.org/10.1109/LED.2026.3707297","url":null,"abstract":"Monolithic silicon integration provides a promising pathway toward low-cost, large-format infrared photodetectors despite substantial lattice mismatch. Here, mid-wave infrared InAsSb barrier detectors were monolithically grown on silicon via molecular beam epitaxy. To mitigate the effects of a high threading dislocation density caused by the 11% lattice mismatch, a unipolar barrier was employed to suppress defect-induced generation-recombination (G-R) current, thereby maintaining reliable device performance. Electrical measurements showed low dark current densities of <inline-formula> <tex-math>${1}.{40}times {10} ^{-{7}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${1}.{75}times {10} ^{-{2}}$ </tex-math></inline-formula> A/cm2 at 77 and 300 K, respectively, under a bias of −0.2 V. Furthermore, the devices achieved a peak responsivity of 0.75 A/W and a quantum efficiency (QE) of 26.6% at <inline-formula> <tex-math>$3.5~mu $ </tex-math></inline-formula>m. These metrics validate the effectiveness of the barrier architecture in neutralizing the deleterious impact of threading dislocations, confirming that band engineering provides superior defect tolerance for antimonide-based infrared sensing on CMOS-compatible platforms.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1543-1546"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Uniformity Wafer-Level Porous TiO2–WO3 Heterojunction Sensor Chips for Highly-Sensitive Ethanol Detection 用于高灵敏度乙醇检测的高均匀性晶片级多孔TiO2-WO3异质结传感器芯片

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-25 DOI: 10.1109/LED.2026.3705079

Tianliang Meng;Jiyong Zhou;Mingquan Zhang;Xiaoting Tan;Haojiang Wen;Hui Li;Jianyou Dai;Chi Zhang;Lei Shan;Sixing Xu

{"title":"High-Uniformity Wafer-Level Porous TiO2–WO3 Heterojunction Sensor Chips for Highly-Sensitive Ethanol Detection","authors":"Tianliang Meng;Jiyong Zhou;Mingquan Zhang;Xiaoting Tan;Haojiang Wen;Hui Li;Jianyou Dai;Chi Zhang;Lei Shan;Sixing Xu","doi":"10.1109/LED.2026.3705079","DOIUrl":"https://doi.org/10.1109/LED.2026.3705079","url":null,"abstract":"Chip-scale gas sensors based on metal oxide semiconductors (MOS) have attracted extensive research interests; however, the poor sensitivity and selectivity of single-type MOS materials have greatly limited their practical applications. Recently, MOS heterojunctions with porous structures have emerged as an effective strategy, attributed to their high specific surface area and tailored band structures. Nevertheless, the synthesis of such structures usually relies on chemical methods incompatible with semiconductor manufacturing processes and remains challenging to fabricate directly on wafers. Herein, we report a facile strategy for preparing porous TiO2-WO3 heterojunction thin films at the wafer level, which is applicable to the batch fabrication of ultrasensitive ethanol gas sensor chips. Specifically, TiO2 and WO3 are co-sputtered onto a wafer, followed by room-temperature HCl wet-etching to reconstruct the porous structure and subsequent annealing. The fabricated sensor chip exhibits an excellent response (5.83 @ 10 ppm) and high selectivity toward ethanol vapor under UV irradiation, accompanied by outstanding repeatability and response uniformity. Meanwhile, the proposed strategy demonstrates excellent inter-device consistency across the wafer: the relative standard deviation (RSD) of the sensing response is as low as 3.08%. Coupled with the low fabrication cost, this work provides a promising route for the large-scale production of high-performance miniaturized gas sensors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1631-1634"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Scaling Theory for the Nonlinear Subthreshold Behavior of Cryogenic Ultrathin Body MOSFETs 低温超薄体mosfet非线性亚阈值行为的标度理论

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-09 DOI: 10.1109/LED.2026.3701783

In Huh;Mir Md Fahimul Islam;Changwook Jeong;Muhammad A. Alam

{"title":"A Scaling Theory for the Nonlinear Subthreshold Behavior of Cryogenic Ultrathin Body MOSFETs","authors":"In Huh;Mir Md Fahimul Islam;Changwook Jeong;Muhammad A. Alam","doi":"10.1109/LED.2026.3701783","DOIUrl":"https://doi.org/10.1109/LED.2026.3701783","url":null,"abstract":"The subthreshold swing (SS) is expected to scale linearly with temperature, <inline-formula> <tex-math>$text {SS}_{text {B}} = text {(}text {k}_{text {B}}text {T}/text {q}text {)}ln {10}$ </tex-math></inline-formula>, yet experimental data from cryogenic UTB (Si, MoS2, and In2 O3) MOSFETs exhibit anomalous temperature-dependent nonlinearities characterized by negative differential SS and multiple plateaus. Here we use the Landauer formulation to rigorously derive the scaling relationship <inline-formula> <tex-math>$text {SS} = text {SS}_{text {B}}cdot [{1}+gamma text {(}text {T}_{text {R}}/text {T}text {)}^{text {T}/text {T}_{text {W}}}]$ </tex-math></inline-formula> for constant diffusivity to capture the universality and robustness of SS anomalies reported in the literature. The temperature scales (<inline-formula> <tex-math>$text {T}_{text {W}}, text {T}_{text {R}}$ </tex-math></inline-formula>) are respectively related to the intrinsic properties of the band-tail states and reference current, and as such, can be used as a diagnostic quality monitor of as-fabricated and stress-degraded MOSFET.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1671-1674"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0