IEEE Electron Device Letters最新文献_第6页

Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack 了解采用 HZO-Al2O3-HZO 铁电叠层的 ALD 沉积氧化锌铁氧体场效应晶体管中由偏压引起的不稳定性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3462933

Chen Sun;Qiwen Kong;Gan Liu;Dong Zhang;Leming Jiao;Xiaolin Wang;Jishen Zhang;Haiwen Xu;Yang Feng;Rui Shao;Yue Chen;Xiao Gong

{"title":"Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack","authors":"Chen Sun;Qiwen Kong;Gan Liu;Dong Zhang;Leming Jiao;Xiaolin Wang;Jishen Zhang;Haiwen Xu;Yang Feng;Rui Shao;Yue Chen;Xiao Gong","doi":"10.1109/LED.2024.3462933","DOIUrl":"10.1109/LED.2024.3462933","url":null,"abstract":"In this work, we investigate the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {TH}}text {)}$ </tex-math></inline-formula>\u0000 and memory window (MW) dynamics under positive and negative bias stress (PBS/NBS) in atomic layer deposition (ALD)-grown zinc oxide (ZnO) ferroelectric field-effect transistors (FeFETs). The gate stack is engineered by inserting an Al2O3 layer between Zr-doped HfO2 (HZO) layers to form an HZO-Al2O3-HZO configuration. This enhances the MW of ZnO FeFETs to 1.75 V compared to devices without the Al2O3 insertion. From bias stress characterizations, notable results are obtained, especially under NBS conditions. It is revealed that the generation of disorder state (DS) O\u0000<inline-formula> <tex-math>$^{{2}-}$ </tex-math></inline-formula>\u0000 defects plays a key role when devices are stressed by negative bias, leading to an abnormal positive shift in \u0000<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>\u0000. Importantly, the degradation in MW caused by polarization pinning during NBS is mitigated by applying an even more negative bias. This can be explained by enhanced polarization erasing due to NBS. Our investigations provide a deep understanding of bias stress-induced instabilities in ALD-deposited ZnO FeFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2122-2125"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

80 Gbps PAM-4 Data Transmission With 940 nm VCSELs Grown on a 330 μm Ge Substrate 使用生长在 330 μm Ge 基底面上的 940 nm VCSEL 传输 80 Gbps PAM-4 数据

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3462949

Yun-Cheng Yang;Zeyu Wan;Chih-Chuan Chiu;I-Chi Liu;Guangrui Xia;Chao-Hsin Wu

{"title":"80 Gbps PAM-4 Data Transmission With 940 nm VCSELs Grown on a 330 μm Ge Substrate","authors":"Yun-Cheng Yang;Zeyu Wan;Chih-Chuan Chiu;I-Chi Liu;Guangrui Xia;Chao-Hsin Wu","doi":"10.1109/LED.2024.3462949","DOIUrl":"10.1109/LED.2024.3462949","url":null,"abstract":"940 nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) on \u0000<inline-formula> <tex-math>$330~mu $ </tex-math></inline-formula>\u0000 m thick Ge bulk substrates were fabricated and characterized, presenting a novel approach to VCSEL manufacturing. The wafer surfaces demonstrated high smoothness and flatness, with a peak-to-valley wafer distortion of \u0000<inline-formula> <tex-math>$50.3~mu $ </tex-math></inline-formula>\u0000 m, a root mean square roughness (Rq) of 1.34 nm, and an average wafer bow-warp of \u0000<inline-formula> <tex-math>$3.77~mu $ </tex-math></inline-formula>\u0000 m. The Fabry-Pérot dip precisely aligned with the target wavelength, while stopband center mapping exhibited excellent uniformity across the wafer, with a 1.937 nm (0.206%) standard deviation. At 300 K, the Ge-based VCSEL with a \u0000<inline-formula> <tex-math>$6~mu $ </tex-math></inline-formula>\u0000 m oxide aperture achieved an optical peak power of 5.5 mW and a maximum modulation bandwidth of 19.8 GHz, with a roll-over current surpassing 16 mA. Furthermore, the device demonstrated successful data transmission at 53.125 Gbps and 80 Gbps using PAM-4 modulation, achieving transmitter and dispersion eye closure quaternary (TDECQ) penalties of 1.36 dB and 4.70 dB, respectively. These results underscore the potential of thin Ge substrates in advancing VCSEL technology for high-speed optical communication applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2070-2073"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Response Time of the High Operating Temperature and Very Long Wavelength Type-II Superlattice InAs/InAsSb Interband Cascade Photodetectors 高工作温度和超长波长 II 型超晶格 InAs/InAsSb 带间级联光电探测器的响应时间

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-16 DOI: 10.1109/LED.2024.3462152

Karol Dąbrowski;Łukasz Kubiszyn;Waldemar Gawron;Bartłomiej Seredyński;Krystian Michalczewski;Chao-Hsin Wu;Yuh-Renn Wu;Piotr Martyniuk

引用次数: 0

Thermal Instability Compensation of Synaptic 3D Flash Memory-Based Hardware Neural Networks With Adaptive Read Bias 基于自适应读取偏置的突触三维闪存硬件神经网络的热不稳定性补偿

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3459615

Jangsaeng Kim;Jiseong Im;Jong-Ho Lee

引用次数: 0

Highly Reliable 4 Mb FeRAM Using a Newly Developed PLZT Capacitor With a Bi-Doped SRO Interlayer 使用新开发的带有双掺杂 SRO 中间层的 PLZT 电容器的高可靠性 4 Mb FeRAM

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3459044

W. Wang;T. Eshita;K. Takai;S. Amari;K. Nakamura;M. Oikawa;N. Sato;S. Ozawa;M. Nakabayashi;S. Mihara;Y. Hikosaka;H. Saito;K. Inoue;K. Nagai

{"title":"Highly Reliable 4 Mb FeRAM Using a Newly Developed PLZT Capacitor With a Bi-Doped SRO Interlayer","authors":"W. Wang;T. Eshita;K. Takai;S. Amari;K. Nakamura;M. Oikawa;N. Sato;S. Ozawa;M. Nakabayashi;S. Mihara;Y. Hikosaka;H. Saito;K. Inoue;K. Nagai","doi":"10.1109/LED.2024.3459044","DOIUrl":"10.1109/LED.2024.3459044","url":null,"abstract":"We successfully developed a lanthanum (La)-doped Pb(Zr,Ti)O\u0000<inline-formula> <tex-math>$_{boldsymbol {textbf {3}}}$ </tex-math></inline-formula>\u0000 (PLZT)-based ferroelectric random access memory (FeRAM) with a newly developed ferroelectric capacitor (FC) employing bismuth (Bi)-doped SrRuO\u0000<inline-formula> <tex-math>$_{boldsymbol {textbf {3}}}$ </tex-math></inline-formula>\u0000 (B-SRO), aiming to improve the electrical properties and reliability of the FC. Sputter-deposited SrRuO\u0000<inline-formula> <tex-math>$_{boldsymbol {textbf {3}}}$ </tex-math></inline-formula>\u0000, commonly used as an interlayer between the metal electrode and ferroelectric layers to improve FC characteristics, does not necessarily result in good electrical properties due to the low atomic density of SRO, typically up to 85%. To address this, we employed a B-SRO interlayer deposited by a B-SRO target with an atomic density up to 95%. FCs utilizing B-SRO exhibit significantly better electrical properties, endurance (\u0000<inline-formula> <tex-math>$gt 10^{boldsymbol {textbf {14}}}$ </tex-math></inline-formula>\u0000 at 90°C), and retention (approximately 10 years at 125°C) compared to FCs without B-SRO. Reliability tests based on JESD22-A108 standards, confirm that our 4Mb FeRAM with B-SRO is highly reliable and commercially available.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2126-2129"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Suppressed Transverse Mode Generation in TF-SAW Resonators Based on LiTaO3/Sapphire 基于 LiTaO3/Sapphire 的 TF-SAW 谐振器中的抑制横向模式生成

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3459023

Junyao Shen;Wenfeng Yao;Temesgen Bailie Workie;Quhuan Shen;Qiufeng Xu;Jingfu Bao;Ken-Ya Hashimoto

{"title":"Suppressed Transverse Mode Generation in TF-SAW Resonators Based on LiTaO3/Sapphire","authors":"Junyao Shen;Wenfeng Yao;Temesgen Bailie Workie;Quhuan Shen;Qiufeng Xu;Jingfu Bao;Ken-Ya Hashimoto","doi":"10.1109/LED.2024.3459023","DOIUrl":"10.1109/LED.2024.3459023","url":null,"abstract":"Thin-film surface acoustic wave (TF-SAW) devices are important for wireless communication systems in the new age. Nevertheless, there are still some technical challenges including transverse mode suppression. To find out a practical solution for the challenge, this work theoretically and experimentally investigates transverse mode generation in TF-SAW devices based on LiTaO3/sapphire in which only mature and commercial materials are adopted. The devices with various Al thicknesses and wavelengths are simulated, and slowness curves, admittance curve and displacement distributions are all analyzed. A large range of wavelength from \u0000<inline-formula> <tex-math>$1.6~mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>\u0000m or even larger is found for the devices to have flat slowness curves. TF-SAW resonators based on LiTaO3/sapphire without any designs for transverse mode suppression are fabricated. The transverse modes in the resonators with wavelength from \u0000<inline-formula> <tex-math>$1.6~mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$3.8~mu $ </tex-math></inline-formula>\u0000m are all dramatically suppressed, agreeing well with the theoretical results. We believe that the suppression is sufficient, even though the transverse modes still exist. This work proposes a method to obtain TF-SAW devices with suppressed transverse mode generation, showing the strengths of LiTaO3/sapphire structure and promoting the development of TF-SAW technology.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2241-2244"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimized MFS Stack With N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs 采用掺杂 N 的 TiO2 沟道和掺杂 La 的 HfO2 铁电层的优化 MFS 叠层实现高稳定性 FeFET

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3458999

Xujin Song;Dijiang Sun;Chenxi Yu;Shangze Li;Zheng Zhou;Xiaoyan Liu;Jinfeng Kang

引用次数: 0

A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K 基于 4H-SiC NMOSFET 的温度传感器，工作温度范围为 14K 至 481K

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3459049

Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto

{"title":"A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K","authors":"Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto","doi":"10.1109/LED.2024.3459049","DOIUrl":"10.1109/LED.2024.3459049","url":null,"abstract":"The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K \u0000<inline-formula> <tex-math>$leq $ </tex-math></inline-formula>\u0000 T \u0000<inline-formula> <tex-math>$leq 200$ </tex-math></inline-formula>\u0000K, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of \u0000<inline-formula> <tex-math>$1.59mu $ </tex-math></inline-formula>\u0000A; instead, a current of \u0000<inline-formula> <tex-math>$100mu $ </tex-math></inline-formula>\u0000A permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T \u0000<inline-formula> <tex-math>$leq 394$ </tex-math></inline-formula>\u0000K, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and \u0000<inline-formula> <tex-math>$9mu $ </tex-math></inline-formula>\u0000A the linearity is higher than 0.95 in all temperature ranges.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2181-2184"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10679237","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Extended Tauc-Lorentz Model for Amorphous Materials With Non-Exponential Band Tails 非指数带尾非晶材料的扩展陶克-洛伦兹模型

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-11 DOI: 10.1109/LED.2024.3458392

Yuri Vygranenko;Guilherme Lavareda

引用次数: 0

Dual-Site Crystallization Regulation for Highly Efficient and Stable Perovskite Solar Cells 高效稳定的 Perovskite 太阳能电池的双位结晶调节技术

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-11 DOI: 10.1109/LED.2024.3458056

Jianing Xi;Yi Zhang;Hanxiao Gao;Zhuowei Li;Chunyu Liu;Wenbin Guo

引用次数: 0