IEEE Electron Device Letters最新文献_第10页

Compression of 20 kW 170 GHz Gyrotron Output Radiation by Quasi-Optical Resonator With Laser Activated GaAs Switch 利用带激光激活砷化镓开关的准光学谐振器压缩 20 kW 170 GHz 陀螺仪输出辐射

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-21 DOI: 10.1109/LED.2024.3447127

G. G. Denisov;A. V. Palitsin;D. I. Sobolev;A. N. Kuftin;V. V. Parshin;M. V. Morozkin;A. V. Chirkov;M. Yu. Glyavin

引用次数: 0

Dual-Mode Thermal-Piezoresistive Coupled Resonators for Fast and Stable NIR Measurements With Differential Output 用于快速稳定近红外测量的双模热压阻耦合谐振器，带差分输出

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-20 DOI: 10.1109/LED.2024.3443128

Aojie Quan;Chen Wang;Hemin Zhang;Michael Kraft

{"title":"Dual-Mode Thermal-Piezoresistive Coupled Resonators for Fast and Stable NIR Measurements With Differential Output","authors":"Aojie Quan;Chen Wang;Hemin Zhang;Michael Kraft","doi":"10.1109/LED.2024.3443128","DOIUrl":"https://doi.org/10.1109/LED.2024.3443128","url":null,"abstract":"This study reports a resonant Near-Infrared (NIR) detector based on dual-mode, self-oscillating Thermal-Piezoresistive Coupled Resonators. The resented device alleviates the current trade-offs between resolution and response time in Microelectromechanical Systems (MEMS) thermal detectors. The thermal-piezoresistive coupled resonators operate simultaneously in the in-phase and out-of-phase modes and the frequency difference between two modes is selected as the output metric. The square-shaped coupling area of the coupled resonators acted as the NIR sensing region because of its low thermal resistance. Our design demonstrated a \u0000<inline-formula> <tex-math>$700~mu {s}$ </tex-math></inline-formula>\u0000 response time, achieving 700-fold improvement compared to the conventional single-frequency output methods. Further, the differential output method inherently compensates for temperature drift, significantly increasing the immunity of device to thermal crosstalk by a factor of 25. A noise equivalent power density resolution of 253 pW/\u0000<inline-formula> <tex-math>$sqrt {textit {Hz}}$ </tex-math></inline-formula>\u0000 is achieved.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient and Stable Light-Emitting Diodes Enabled by Entropy-Driven Alloyed Perovskite Nanocrystals 熵驱动合金化过氧化物纳米晶体实现高效稳定的发光二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-20 DOI: 10.1109/LED.2024.3446550

Tengfei Long;Han Miao;Sheng Wang;Rui Li;Chengxi Zhang;Lin Wang;Tao Hu;Chonghe Li;Xuyong Yang

引用次数: 0

Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure 利用铁电和反铁电 HfxZr1-xO2 双层结构定制铁电矫顽力场和极化

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-20 DOI: 10.1109/LED.2024.3435381

Geon Park;An H. Nguyen;Manh-Cuong Nguyen;Anh-Duy Nguyen;Hyunsoo Kim;Jaekyeong Kim;Kyungsoo Hwang;Hoyeon Shin;Siun Song;Rino Choi

{"title":"Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure","authors":"Geon Park;An H. Nguyen;Manh-Cuong Nguyen;Anh-Duy Nguyen;Hyunsoo Kim;Jaekyeong Kim;Kyungsoo Hwang;Hoyeon Shin;Siun Song;Rino Choi","doi":"10.1109/LED.2024.3435381","DOIUrl":"https://doi.org/10.1109/LED.2024.3435381","url":null,"abstract":"In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf\u0000x\u0000Zr\u0000<inline-formula> <tex-math>$_{{1}-{text {x}}}$ </tex-math></inline-formula>\u0000O\u00002\u0000(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E\u0000<inline-formula> <tex-math>$_{text {c}}text {)}$ </tex-math></inline-formula>\u0000. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E\u0000c\u0000. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P\u0000r\u0000 (2P\u0000<inline-formula> <tex-math>$_{text {r}} ,, = ,, 45.9~mu $ </tex-math></inline-formula>\u0000C/cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000, than the control sample, while this significant increase of P\u0000r\u0000 was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wafer-Scale Fabricated On-Chip Thermionic Electron Sources Based on a Suspended Y2O3/TiN Filament 基于悬浮 Y2O3/TiN 灯丝的晶圆级制造片上热离子电子源

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-20 DOI: 10.1109/LED.2024.3446637

Weidong Rao;Zhiwei Li;Dengzhu Guo;Yang Li;Taoyuan Zhu;Xianlong Wei

引用次数: 0

Highly Reliable Lateral Migration-Based TFT-Type Neuron Device for Spiking Neural Networks 用于尖峰神经网络的基于侧向迁移的高可靠性 TFT 型神经元器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-19 DOI: 10.1109/LED.2024.3445970

Min-Kyu Park;Joon Hwang;Jong-Ho Bae;Jae-Joon Kim;Jong-Ho Lee

引用次数: 0

Ti₃C₂Tₓ/Si Nanoholes Array (SiNHA) Schottky Photodiode for Filter-Free Color Single-Pixel Imaging (SPI) 用于免滤光片彩色单像素成像 (SPI) 的 Ti₃C₂Tₓ/Si 纳米孔阵列 (SiNHA) 肖特基光电二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-19 DOI: 10.1109/LED.2024.3445951

Jinxulong Gao;Xinhui He;Wei Shu;Yizhong Yang;Xing Chen;Linbao Luo;Chunyan Wu

{"title":"Ti₃C₂Tₓ/Si Nanoholes Array (SiNHA) Schottky Photodiode for Filter-Free Color Single-Pixel Imaging (SPI)","authors":"Jinxulong Gao;Xinhui He;Wei Shu;Yizhong Yang;Xing Chen;Linbao Luo;Chunyan Wu","doi":"10.1109/LED.2024.3445951","DOIUrl":"https://doi.org/10.1109/LED.2024.3445951","url":null,"abstract":"In this letter, we report a self-powered Ti\u00003\u0000C\u00002\u0000T\u0000x\u0000/Si nanoholes array (SiNHA) Schottky photodiode fabricated by spin-coating Ti\u00003\u0000C\u00002\u0000T\u0000x\u0000 layer. The device exhibited enhanced photoresponse over the broadband wavelength range (265-1200 nm) and an excellent linear dynamic range (LDR, 119 dB), showing responsivity, specific detectivity and response speed of 0.97 A W\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000, \u0000<inline-formula> <tex-math>$1.03times 10^{{14}}$ </tex-math></inline-formula>\u0000 Jones and 162/\u0000<inline-formula> <tex-math>$60~mu $ </tex-math></inline-formula>\u0000s for rise/fall time at zero bias upon 970 nm illumination (light intensity: \u0000<inline-formula> <tex-math>$2.5~mu $ </tex-math></inline-formula>\u0000W cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000), respectively. The broadband photoresponse ensured the high-quality visible Fourier single-pixel imaging (FSI) and a \u0000<inline-formula> <tex-math>$256times 256$ </tex-math></inline-formula>\u0000-pixel color image was achieved by synthesizing R-, G-, and B-channel monochrome images obtained at 7.79% sampling rate. This work also provides a simple strategy for filter-free color single-pixel imaging (SPI).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer 使用选择性蚀刻原位 SiN 钝化层的 E-Mode AlN/GaN HEMT 在 30 GHz 频率下的 5.59 W/mm 饱和输出功率密度

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-14 DOI: 10.1109/LED.2024.3437765

Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao

{"title":"5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer","authors":"Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3437765","DOIUrl":"https://doi.org/10.1109/LED.2024.3437765","url":null,"abstract":"This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {Th}}text {)}$ </tex-math></inline-formula>\u0000 of 0.53 V, high maximum drain current density (\u0000<inline-formula> <tex-math>${I}_{text {d- {max}}}text {)}$ </tex-math></inline-formula>\u0000 of 1.19 A/mm, and maximum transconductance (\u0000<inline-formula> <tex-math>${G}_{text {m- {max}}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$sim ~0.61$ </tex-math></inline-formula>\u0000 S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (\u0000<inline-formula> <tex-math>${P}_{text {sat}}text {)}$ </tex-math></inline-formula>\u0000 of 5.59 W/mm at a drain-source voltage (\u0000<inline-formula> <tex-math>${V}_{text {ds}}text {)}$ </tex-math></inline-formula>\u0000 of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142383505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogen Plasma Treated p-GaN Gate HEMTs Integration for DC-DC Converter 氢等离子体处理 p-GaN 栅极 HEMT 集成用于直流-直流转换器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-14 DOI: 10.1109/LED.2024.3442853

Fan Li;Ang Li;Shiqiang Wu;Weisheng Wang;Yuhao Zhu;Guohao Yu;Zhongming Zeng;Baoshun Zhang;Jiangmin Gu;Wen Liu

引用次数: 0

The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures 高温下 Hf₀.₅Zr₀.₅O₂ 电容器中残余极化的波动效应

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-08-14 DOI: 10.1109/LED.2024.3443619

Zhaomeng Gao;Yunzhe Zheng;Tianjiao Xin;Cheng Liu;Qiwendong Zhao;Yilin Xu;Yonghui Zheng;Xiaoling Lin;Hangbing Lyu;Yan Cheng

{"title":"The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures","authors":"Zhaomeng Gao;Yunzhe Zheng;Tianjiao Xin;Cheng Liu;Qiwendong Zhao;Yilin Xu;Yonghui Zheng;Xiaoling Lin;Hangbing Lyu;Yan Cheng","doi":"10.1109/LED.2024.3443619","DOIUrl":"https://doi.org/10.1109/LED.2024.3443619","url":null,"abstract":"Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O\u00002\u0000 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0