G. G. Denisov;A. V. Palitsin;D. I. Sobolev;A. N. Kuftin;V. V. Parshin;M. V. Morozkin;A. V. Chirkov;M. Yu. Glyavin
{"title":"Compression of 20 kW 170 GHz Gyrotron Output Radiation by Quasi-Optical Resonator With Laser Activated GaAs Switch","authors":"G. G. Denisov;A. V. Palitsin;D. I. Sobolev;A. N. Kuftin;V. V. Parshin;M. V. Morozkin;A. V. Chirkov;M. Yu. Glyavin","doi":"10.1109/LED.2024.3447127","DOIUrl":"https://doi.org/10.1109/LED.2024.3447127","url":null,"abstract":"A compression of the output radiation of a 20 kW, 170 GHz gyrotron has been experimentally demonstrated in a quasi-optical travelling wave resonator with a gallium arsenide switch activated by a 532 nm picoseconds laser. A compression ratio of 20 has been obtained when the energy of picosecond laser pulses reached 50 mJ. The power of compressed pulses has been estimated at the level of 0.4 MW. The duration of compressed pulses did not exceed 1.2 ns which was less than the resonator round-trip time.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"2040-2043"},"PeriodicalIF":4.1,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure","authors":"Geon Park;An H. Nguyen;Manh-Cuong Nguyen;Anh-Duy Nguyen;Hyunsoo Kim;Jaekyeong Kim;Kyungsoo Hwang;Hoyeon Shin;Siun Song;Rino Choi","doi":"10.1109/LED.2024.3435381","DOIUrl":"https://doi.org/10.1109/LED.2024.3435381","url":null,"abstract":"In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf\u0000<sub>x</sub>\u0000Zr\u0000<inline-formula> <tex-math>$_{{1}-{text {x}}}$ </tex-math></inline-formula>\u0000O\u0000<sub>2</sub>\u0000(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E\u0000<inline-formula> <tex-math>$_{text {c}}text {)}$ </tex-math></inline-formula>\u0000. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E\u0000<sub>c</sub>\u0000. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P\u0000<sub>r</sub>\u0000 (2P\u0000<inline-formula> <tex-math>$_{text {r}} ,, = ,, 45.9~mu $ </tex-math></inline-formula>\u0000C/cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000, than the control sample, while this significant increase of P\u0000<sub>r</sub>\u0000 was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1997-2000"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tengfei Long;Han Miao;Sheng Wang;Rui Li;Chengxi Zhang;Lin Wang;Tao Hu;Chonghe Li;Xuyong Yang
{"title":"Efficient and Stable Light-Emitting Diodes Enabled by Entropy-Driven Alloyed Perovskite Nanocrystals","authors":"Tengfei Long;Han Miao;Sheng Wang;Rui Li;Chengxi Zhang;Lin Wang;Tao Hu;Chonghe Li;Xuyong Yang","doi":"10.1109/LED.2024.3446550","DOIUrl":"https://doi.org/10.1109/LED.2024.3446550","url":null,"abstract":"Perovskite nanocrystals (PeNCs)-based light-emitting diodes (PeLEDs) are emerging as promising candidates for next-generation electroluminescent devices. However, their practical application is limited due to the poor stability of PeNCs. Here, we demonstrate an efficient and stable PeLED enabled by entropy-driven CsCd\u0000<sub>0.1</sub>\u0000Pb\u0000<sub>0.8</sub>\u0000Sr\u0000<sub>0.1</sub>\u0000Br\u0000<sub>3</sub>\u0000 PeNCs as emitter. Based on density functional theory (DFT) calculations with the Compound Energy Formalism (CEF) model, the simultaneous incorporation of multiple elements increases the entropy (S) of PeNCs, thereby enhancing their stability and suppressing lattice defects. The optimized PeLED achieves a maximum external quantum efficiency (EQE) of 22.2%, dramatically surpassing that (14.1%) of the control CsPbBr\u0000<sub>3</sub>\u0000-based device. More importantly, the device operating lifetime reaches 10 h, 14-fold higher than that of the control LED.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1867-1870"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dual-Mode Thermal-Piezoresistive Coupled Resonators for Fast and Stable NIR Measurements With Differential Output","authors":"Aojie Quan;Chen Wang;Hemin Zhang;Michael Kraft","doi":"10.1109/LED.2024.3443128","DOIUrl":"https://doi.org/10.1109/LED.2024.3443128","url":null,"abstract":"This study reports a resonant Near-Infrared (NIR) detector based on dual-mode, self-oscillating Thermal-Piezoresistive Coupled Resonators. The resented device alleviates the current trade-offs between resolution and response time in Microelectromechanical Systems (MEMS) thermal detectors. The thermal-piezoresistive coupled resonators operate simultaneously in the in-phase and out-of-phase modes and the frequency difference between two modes is selected as the output metric. The square-shaped coupling area of the coupled resonators acted as the NIR sensing region because of its low thermal resistance. Our design demonstrated a \u0000<inline-formula> <tex-math>$700~mu {s}$ </tex-math></inline-formula>\u0000 response time, achieving 700-fold improvement compared to the conventional single-frequency output methods. Further, the differential output method inherently compensates for temperature drift, significantly increasing the immunity of device to thermal crosstalk by a factor of 25. A noise equivalent power density resolution of 253 pW/\u0000<inline-formula> <tex-math>$sqrt {textit {Hz}}$ </tex-math></inline-formula>\u0000 is achieved.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1953-1956"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wafer-Scale Fabricated On-Chip Thermionic Electron Sources Based on a Suspended Y2O3/TiN Filament","authors":"Weidong Rao;Zhiwei Li;Dengzhu Guo;Yang Li;Taoyuan Zhu;Xianlong Wei","doi":"10.1109/LED.2024.3446637","DOIUrl":"https://doi.org/10.1109/LED.2024.3446637","url":null,"abstract":"On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm\u0000<sup>2</sup>\u0000 at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1977-1980"},"PeriodicalIF":4.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Min-Kyu Park;Joon Hwang;Jong-Ho Bae;Jae-Joon Kim;Jong-Ho Lee
{"title":"Highly Reliable Lateral Migration-Based TFT-Type Neuron Device for Spiking Neural Networks","authors":"Min-Kyu Park;Joon Hwang;Jong-Ho Bae;Jae-Joon Kim;Jong-Ho Lee","doi":"10.1109/LED.2024.3445970","DOIUrl":"https://doi.org/10.1109/LED.2024.3445970","url":null,"abstract":"A CMOS-compatible Thin Film Transistor (TFT)-type Center Path neuron device with homeostasis characteristics is proposed. By modifying the charge injection path of the gate insulator stack, the proposed neuron device operates with lateral migration, which was conventionally perceived as a disadvantage in the memory industry. Various measured electrical characteristics of the Center Path device show that directly injected charges from the channel poly-Si to the charge trap Si\u0000<sub>3</sub>\u0000N\u0000<sub>4</sub>\u0000 with low operational voltage laterally migrate to the Si\u0000<sub>3</sub>\u0000N\u0000<sub>4</sub>\u0000 layer above the tunneling SiO\u0000<sub>2</sub>\u0000 layer. Furthermore, the proposed Center Path device successfully demonstrates the integration with homeostasis functionality observed in biological neurons due to its discrete operational schemes.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1780-1783"},"PeriodicalIF":4.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ti₃C₂Tₓ/Si Nanoholes Array (SiNHA) Schottky Photodiode for Filter-Free Color Single-Pixel Imaging (SPI)","authors":"Jinxulong Gao;Xinhui He;Wei Shu;Yizhong Yang;Xing Chen;Linbao Luo;Chunyan Wu","doi":"10.1109/LED.2024.3445951","DOIUrl":"https://doi.org/10.1109/LED.2024.3445951","url":null,"abstract":"In this letter, we report a self-powered Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000T\u0000<sub>x</sub>\u0000/Si nanoholes array (SiNHA) Schottky photodiode fabricated by spin-coating Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000T\u0000<sub>x</sub>\u0000 layer. The device exhibited enhanced photoresponse over the broadband wavelength range (265-1200 nm) and an excellent linear dynamic range (LDR, 119 dB), showing responsivity, specific detectivity and response speed of 0.97 A W\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000, \u0000<inline-formula> <tex-math>$1.03times 10^{{14}}$ </tex-math></inline-formula>\u0000 Jones and 162/\u0000<inline-formula> <tex-math>$60~mu $ </tex-math></inline-formula>\u0000s for rise/fall time at zero bias upon 970 nm illumination (light intensity: \u0000<inline-formula> <tex-math>$2.5~mu $ </tex-math></inline-formula>\u0000W cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000), respectively. The broadband photoresponse ensured the high-quality visible Fourier single-pixel imaging (FSI) and a \u0000<inline-formula> <tex-math>$256times 256$ </tex-math></inline-formula>\u0000-pixel color image was achieved by synthesizing R-, G-, and B-channel monochrome images obtained at 7.79% sampling rate. This work also provides a simple strategy for filter-free color single-pixel imaging (SPI).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1914-1917"},"PeriodicalIF":4.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer","authors":"Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3437765","DOIUrl":"https://doi.org/10.1109/LED.2024.3437765","url":null,"abstract":"This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {Th}}text {)}$ </tex-math></inline-formula>\u0000 of 0.53 V, high maximum drain current density (\u0000<inline-formula> <tex-math>${I}_{text {d- {max}}}text {)}$ </tex-math></inline-formula>\u0000 of 1.19 A/mm, and maximum transconductance (\u0000<inline-formula> <tex-math>${G}_{text {m- {max}}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$sim ~0.61$ </tex-math></inline-formula>\u0000 S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (\u0000<inline-formula> <tex-math>${P}_{text {sat}}text {)}$ </tex-math></inline-formula>\u0000 of 5.59 W/mm at a drain-source voltage (\u0000<inline-formula> <tex-math>${V}_{text {ds}}text {)}$ </tex-math></inline-formula>\u0000 of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1717-1720"},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142383505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fan Li;Ang Li;Shiqiang Wu;Weisheng Wang;Yuhao Zhu;Guohao Yu;Zhongming Zeng;Baoshun Zhang;Jiangmin Gu;Wen Liu
{"title":"Hydrogen Plasma Treated p-GaN Gate HEMTs Integration for DC-DC Converter","authors":"Fan Li;Ang Li;Shiqiang Wu;Weisheng Wang;Yuhao Zhu;Guohao Yu;Zhongming Zeng;Baoshun Zhang;Jiangmin Gu;Wen Liu","doi":"10.1109/LED.2024.3442853","DOIUrl":"https://doi.org/10.1109/LED.2024.3442853","url":null,"abstract":"This letter presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1756-1759"},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142383458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures","authors":"Zhaomeng Gao;Yunzhe Zheng;Tianjiao Xin;Cheng Liu;Qiwendong Zhao;Yilin Xu;Yonghui Zheng;Xiaoling Lin;Hangbing Lyu;Yan Cheng","doi":"10.1109/LED.2024.3443619","DOIUrl":"https://doi.org/10.1109/LED.2024.3443619","url":null,"abstract":"Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O\u0000<sub>2</sub>\u0000 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1788-1791"},"PeriodicalIF":4.1,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}