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Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate 在图案蓝宝石衬底上的垂直GaN二极管的稳健雪崩（1.5 kV, 2 kA/cm²）
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-03-06 DOI: 10.1109/LED.2025.3548905
Yifan Wang;Ming Xiao;Zineng Yang;Matthew Porter;Kai Cheng;Qihao Song;Ivan Kravchenko;Yuhao Zhang
{"title":"Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate","authors":"Yifan Wang;Ming Xiao;Zineng Yang;Matthew Porter;Kai Cheng;Qihao Song;Ivan Kravchenko;Yuhao Zhang","doi":"10.1109/LED.2025.3548905","DOIUrl":"https://doi.org/10.1109/LED.2025.3548905","url":null,"abstract":"The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm2) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"717-720"},"PeriodicalIF":4.1,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 4.15 GHz Super High Frequency Quartz Resonator Based on Electron-Beam Lithography 基于电子束光刻技术的4.15 GHz超高频石英谐振器
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-03-06 DOI: 10.1109/LED.2025.3548700
Zhichao Yang;Yahui Tian;Qiaozhen Zhang;Lirong Qian
{"title":"A 4.15 GHz Super High Frequency Quartz Resonator Based on Electron-Beam Lithography","authors":"Zhichao Yang;Yahui Tian;Qiaozhen Zhang;Lirong Qian","doi":"10.1109/LED.2025.3548700","DOIUrl":"https://doi.org/10.1109/LED.2025.3548700","url":null,"abstract":"Quartz resonators have been widely used in fields such as communications, electronics, aerospace, and national defense due to their exceptional frequency stability, high-quality factor, and excellent temperature stability. To meet the demand for growing development, higher resonators are needed. This letter utilizes a compound optimization algorithm to design a super high frequency quartz resonator with a center frequency of 4.15GHz and successfully fabricates the device using electron beam lithography. Scanning electron microscopy (SEM) characterization results show that the device remains relatively flat and smooth despite partial loss defects. The minimum finger width of the device is about 207 nm. Measured S-parameter results showed that the Q of this super high-frequency resonator can reach 842.7. The successful super high frequency resonator lays a foundation for its application in the high-frequency field and also provides a reference for future research and development of super high frequency quartz resonators.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"880-883"},"PeriodicalIF":4.1,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation si基VCT DRAM中的位线锤击：一种新的安全挑战及解决方法
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-03-05 DOI: 10.1109/LED.2025.3548560
Yong Liu;Da Wang;Pengpeng Ren;Runsheng Wang;Zhigang Ji;Ru Huang
{"title":"Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation","authors":"Yong Liu;Da Wang;Pengpeng Ren;Runsheng Wang;Zhigang Ji;Ru Huang","doi":"10.1109/LED.2025.3548560","DOIUrl":"https://doi.org/10.1109/LED.2025.3548560","url":null,"abstract":"We introduce the Bit Line Hammer (BL hammer) effect, a serious disturbance mechanism in 4F2 DRAM with Si-based Vertical Channel Transistors (VCT). We demonstrate that a specifically designed BL attack pattern, featuring asymmetry and an appropriate toggling frequency, can trigger numerous bit-flips under JEDEC standards, especially at elevated temperatures. This uncovers an unexplored security vulnerability in VCT DRAM cells, with implications for data integrity in advanced memory technologies. Finally, we propose a mitigation strategy to improve cell’s resistance to the BL hammering.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"733-736"},"PeriodicalIF":4.1,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate 具有蚀刻终端和场极板的超快速4H-SiC LGAD
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-03-05 DOI: 10.1109/LED.2025.3548509
Tao Yang;Ben J. Sekely;Yashas Satapathy;Greg Allion;Gil Atar;Philip Barletta;Carl Haber;Steve Holland;John F. Muth;Spyridon Pavlidis;Stefania Stucci;Abraham Tishelman-Charny
{"title":"Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate","authors":"Tao Yang;Ben J. Sekely;Yashas Satapathy;Greg Allion;Gil Atar;Philip Barletta;Carl Haber;Steve Holland;John F. Muth;Spyridon Pavlidis;Stefania Stucci;Abraham Tishelman-Charny","doi":"10.1109/LED.2025.3548509","DOIUrl":"https://doi.org/10.1109/LED.2025.3548509","url":null,"abstract":"Silicon carbide Low Gain Avalanche Detectors (4H-SiC LGADs), exhibiting an ultra-fast time response and excellent time resolution, are reported. Via TCAD simulations, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle. Experimental measurements confirm that the field plate significantly increases the breakdown voltage. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT), showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps in response to an injected laser signal tuned to represent a single minimum ionizing particle (MIP) at room temperature. Additionally, the gain suppression effect is observed in the 4H-SiC LGAD for the first time.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"845-847"},"PeriodicalIF":4.1,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Single-Layer Nested-Coil On-Chip Transformer for Cost-Effective High-Voltage Digital Isolation 用于经济高效的高压数字隔离的单层嵌套线圈片上变压器
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-02-28 DOI: 10.1109/LED.2025.3546922
Jinyu Zhang;Jixiang Chen;Song Xue;Yihao Wang;Rongxiang Wu
{"title":"A Single-Layer Nested-Coil On-Chip Transformer for Cost-Effective High-Voltage Digital Isolation","authors":"Jinyu Zhang;Jixiang Chen;Song Xue;Yihao Wang;Rongxiang Wu","doi":"10.1109/LED.2025.3546922","DOIUrl":"https://doi.org/10.1109/LED.2025.3546922","url":null,"abstract":"In this letter, a single-layer nested-coil on-chip transformer (NCOCT) is proposed and demonstrated for cost-effective high-voltage digital isolation. The two nested planar spiral coils are implemented in a single metal layer for cost-effective fabrication. The metal layer is sandwiched between two isolation layers which block the breakdown paths. The intrinsic distance through isolation (DTI) is determined by the lateral layout distance between the two coils, which makes it easy to achieve high-voltage isolation. The fabricated 0.64-mm2 NCOCT achieved coil inductances of 28/27 nH, as well as a high isolation capability of 12 kV DC and 8 kVrms AC with a DTI of <inline-formula> <tex-math>$37.2~mu $ </tex-math></inline-formula>m. The small coupling factor of 0.3 and the small primary-to-secondary parasitic capacitance of 0.35 pF provides a similar signal-to-common-mode-transient-noise ratio compared with conventional transformer structures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"809-812"},"PeriodicalIF":4.1,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bias-Selectable Dual-Band Avalanche Detector Based on Au-WS₂-Ge Heterostructure 基于Au-WS 2 -Ge异质结构的偏置可选双频雪崩探测器
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-02-28 DOI: 10.1109/LED.2025.3546631
Yuekai Hao;Ningning Zhang;Yichi Zhang;Zhao Han;Qiancui Zhang;Bu Zhang;Jiting Hu;Tian Miao;Huiyong Hu;Liming Wang;Zhangming Zhu
{"title":"Bias-Selectable Dual-Band Avalanche Detector Based on Au-WS₂-Ge Heterostructure","authors":"Yuekai Hao;Ningning Zhang;Yichi Zhang;Zhao Han;Qiancui Zhang;Bu Zhang;Jiting Hu;Tian Miao;Huiyong Hu;Liming Wang;Zhangming Zhu","doi":"10.1109/LED.2025.3546631","DOIUrl":"https://doi.org/10.1109/LED.2025.3546631","url":null,"abstract":"Here, we report a bias-selectable visible and near-infrared photoresponses due to stacked back-to-back diodes structure in a mixed-dimensional Au-WS2-Ge avalanche photodetector. Controllable switching between Schottky (Au/WS2) and PN (WS2/Ge) junctions can be realized depending on the polarity of the bias voltage. Therefore, this device can provide bias-dependent single-band (visible) and fused-band (visible&near-infrared) avalanche detection modes. When the Schottky junction is reversed, ultra-high responsivity (over 2000 A/W) and gain (349) at 532 nm can be obtained when reaching the avalanche breakdown (single-band mode). Meanwhile, when the PN junction is reversed, the ultra-high gains around 354 and 519 can be realized at both 532 and 1550 nm, respectively (fused-band mode). The simulated I-V features agree well with the experimental results. This device provides a novel direction for the application of integrated dual-band avalanche devices in optoelectronic detection.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"793-796"},"PeriodicalIF":4.1,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540244
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29","authors":"","doi":"10.1109/LED.2025.3540244","DOIUrl":"https://doi.org/10.1109/LED.2025.3540244","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"525-525"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906363","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540238
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3540238","DOIUrl":"https://doi.org/10.1109/LED.2025.3540238","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"526-C3"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906361","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540236
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3540236","DOIUrl":"https://doi.org/10.1109/LED.2025.3540236","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"519-519"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10906356","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Photoelectric Performance of β-Ga₂O₃ Phototransistors via NH₃ Plasma Pretreatment for Ultra-Sensitive Solar-Blind UV Detection NH₃等离子体预处理提高β-Ga₂O₃光电晶体管的光电性能用于超灵敏的太阳盲紫外探测
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3545485
Shuqi Huang;Xiaoxi Li;Xiaole Jia;Zhifan Wu;Yuan Fang;Yu Wang;Yang Zhou;Cizhe Fang;Xiangyu Zeng;Yibo Wang;Yan Liu;Yue Hao;Genquan Han
{"title":"Enhanced Photoelectric Performance of β-Ga₂O₃ Phototransistors via NH₃ Plasma Pretreatment for Ultra-Sensitive Solar-Blind UV Detection","authors":"Shuqi Huang;Xiaoxi Li;Xiaole Jia;Zhifan Wu;Yuan Fang;Yu Wang;Yang Zhou;Cizhe Fang;Xiangyu Zeng;Yibo Wang;Yan Liu;Yue Hao;Genquan Han","doi":"10.1109/LED.2025.3545485","DOIUrl":"https://doi.org/10.1109/LED.2025.3545485","url":null,"abstract":"This work presents <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 phototransistors with exceptional photoelectric performance, enhanced by NH3 plasma pretreatment prior to Al2O3 dielectric deposition. The devices achieve a remarkable responsivity (<inline-formula> <tex-math>${R}text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$1.3 times 10^{{6}}$ </tex-math></inline-formula> A/W and a record-high detectivity (<inline-formula> <tex-math>${D}^{ast } text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$2.8 times 10^{{19}}$ </tex-math></inline-formula> Jones under 254 nm ultraviolet (UV) light. Rapid photoresponse is demonstrated, with a rise time (<inline-formula> <tex-math>$tau _{text {r}}text {)}$ </tex-math></inline-formula> of 90 ms and a decay time (<inline-formula> <tex-math>$tau _{text {d}}text {)}$ </tex-math></inline-formula> of 1 ms under a 1 Hz pulsed UV light source. These superior characteristics are attributed to NH3 plasma-induced improvements at the Al2O3/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 interface, including reduced trap density and enhanced dielectric adhesion. The findings provide a promising pathway to advance <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 phototransistors for ultra-sensitive, solar-blind UV detection with rapid response capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"797-800"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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