IEEE Electron Device Letters最新文献_第10页

Retina-Inspired Artificial Optoelectronic Neurons With Broad Spectral Response for Visual Image Pre-Processing

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-09 DOI: 10.1109/LED.2024.3525088

Guocheng Zhang;Jianchuan Tang;Binglin Lai;Hongyu Wang;Zili Zeng;Changqiang Su;Xin Yi;Yujie Yan;Huipeng Chen

{"title":"Retina-Inspired Artificial Optoelectronic Neurons With Broad Spectral Response for Visual Image Pre-Processing","authors":"Guocheng Zhang;Jianchuan Tang;Binglin Lai;Hongyu Wang;Zili Zeng;Changqiang Su;Xin Yi;Yujie Yan;Huipeng Chen","doi":"10.1109/LED.2024.3525088","DOIUrl":"https://doi.org/10.1109/LED.2024.3525088","url":null,"abstract":"Inspired by the human retina, the development of neuromorphic vision systems featuring image perception, memory, and processing functions aims to address the limitations of traditional artificial vision systems concerning circuit simplification, device integration, and power consumption. The narrow spectral response of optoelectronic neurons, an important hardware basis for neuromorphic vision systems, limits their application in broad-spectrum artificial visual perception. In this study, we present an artificial optoelectronic neuron that demonstrates broadband sensing capabilities with a response range encompassing ultraviolet, visible, and near-infrared regions. Furthermore, we have designed a <inline-formula> <tex-math>$64times 64$ </tex-math></inline-formula> array of optoelectronic neurons capable of effectively simulating the light perception and image pre-processing functions (enhance image contrast), of the retina. This work is important for improving image processing efficiency and realizing neuromorphic vision systems with broadband perception.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"401-404"},"PeriodicalIF":4.1,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reduced Dark-Current, Rise-Time, and On-State Delay of Avalanche GaAs Photoconductive Semiconductor Switches by Annealing-Grinding Process

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-09 DOI: 10.1109/LED.2025.3527980

Yingxiang Yang;Long Hu;Xianghong Yang;Jiahui Fu;Zhangjie Zhu;Mingchao Yang;Xin Li;Li Ni;Yang Zhou;Li Geng

{"title":"Reduced Dark-Current, Rise-Time, and On-State Delay of Avalanche GaAs Photoconductive Semiconductor Switches by Annealing-Grinding Process","authors":"Yingxiang Yang;Long Hu;Xianghong Yang;Jiahui Fu;Zhangjie Zhu;Mingchao Yang;Xin Li;Li Ni;Yang Zhou;Li Geng","doi":"10.1109/LED.2025.3527980","DOIUrl":"https://doi.org/10.1109/LED.2025.3527980","url":null,"abstract":"In this letter, the performance of avalanche Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) aimed at DC charging and fiber-triggered high-voltage switches (HVS) applications is reported. The optimal annealing condition suitable for the device is shown to be 250 °C for 30 min by studying the effects of different annealing conditions on the dark-state leakage current of the PCSS. Based on this, a novel annealing-grinding (AG) process is proposed to improve the electrical characteristics of GaAs PCSS. With an electrode gap of 10 mm and a bias voltage of 40 kV, the leakage currents of A-GaAs PCSS, G-GaAs PCSS and AG-GaAs PCSS are reduced by 60.6 %, 64 % and 67.8 %, respectively, compared with the literature. Further, the effects of different processes on the electrical pulse output of avalanche GaAs PCSS, such as optoelectronic delay time and rise time, are investigated. The results show that the avalanche GaAs PCSS can operate stably at 50 kV with a rising edge of 1.2 ns and a photoelectric delay time of 23.93 ns.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"373-376"},"PeriodicalIF":4.1,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unraveling Fatigue Mechanisms in Ferroelectric AlScN Films: The Role of Oxygen Infiltration

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-08 DOI: 10.1109/LED.2024.3522947

Ruiqing Wang;Jiuren Zhou;Danyang Yao;Siying Zheng;Bochang Li;Xiaoxi Li;Yan Liu;Yue Hao;Genquan Han

引用次数: 0

High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-06 DOI: 10.1109/LED.2025.3526503

Jiale Du;Bin Hou;Ling Yang;Yachao Zhang;Qing Zhu;Meng Zhang;Mei Wu;Sen Huang;Fang Song;Hao Lu;Xuerui Niu;Mao Jia;Qingyuan Chang;Qian Yu;Borui Xue;Wen Zhao;Xiaohua Ma;Yue Hao

{"title":"High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer","authors":"Jiale Du;Bin Hou;Ling Yang;Yachao Zhang;Qing Zhu;Meng Zhang;Mei Wu;Sen Huang;Fang Song;Hao Lu;Xuerui Niu;Mao Jia;Qingyuan Chang;Qian Yu;Borui Xue;Wen Zhao;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2025.3526503","DOIUrl":"https://doi.org/10.1109/LED.2025.3526503","url":null,"abstract":"In this letter, we report a high-performance enhancement-mode GaN HEMT fabricated on high-quality ultrathin buffer, which achieved by a two-step-graded (TSG) transition structure on high-resistivity (HR) silicon substrate. Owing to rapid dislocation annihilation of TSG transition structure, the ultrathin buffer exhibits a low total dislocation density (TDD) of <inline-formula> <tex-math>${1}.{7}times {10} ^{{9}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>, which could make a contribution to the improvement of current and RF power performance. As a result, an E-mode GaN HEMT fabricated on this structure presents a maximum drain current of 620 mA/mm, a threshold voltage (<inline-formula> <tex-math>${V}_{text {th}}text {)}$ </tex-math></inline-formula> of 0.7 V, and a transconductance of 360 mS/mm. Furthermore, load-pull measurements yield a maximum output power density (<inline-formula> <tex-math>${P}_{text {out}}text {)}$ </tex-math></inline-formula> of 5.32 W/mm at 3.6 GHz and <inline-formula> <tex-math>${V}_{text {DS}}=35$ </tex-math></inline-formula>V in pulse mode, which represents the top level for E-mode GaN-on-Si devices reported to date. The high-quality GaN epitaxy and splendid E-mode HEMT shown in this work reveal great potential for GaN-on-Si RF applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"349-352"},"PeriodicalIF":4.1,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-12-31 DOI: 10.1109/LED.2024.3524540

Shiming Li;Mei Wu;Ling Yang;Bowen Yang;Haolun Sun;Meng Zhang;Bin Hou;Hao Lu;Xiaohua Ma;Yue Hao

{"title":"15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer","authors":"Shiming Li;Mei Wu;Ling Yang;Bowen Yang;Haolun Sun;Meng Zhang;Bin Hou;Hao Lu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3524540","DOIUrl":"https://doi.org/10.1109/LED.2024.3524540","url":null,"abstract":"In this work, we propose for the first time a high-gradient (HG) stepped-Carbon (stepped-C) doped buffer design in GaN-on-GaN structures to enhance device RF performance. This design not only avoids the impact of the Fe tailing effect on the 2DEG but also effectively mitigates interface conduction losses caused by Si impurities at the regrown interface. Most importantly, the HG stepped-C buffer design significantly alleviates the trapping effects associated with high concentrations of C. The GaN-on-GaN HEMTs with HG stepped-C buffer achieved a breakdown voltage of 249 V, a peak transconductance (<inline-formula> <tex-math>${g}_{text {m}}text {)}$ </tex-math></inline-formula> of 319 mS/mm with a low current collapse (CC) of 6.1%. Collectively, these factors enabled the GaN-on-GaN HEMTs to achieve <inline-formula> <tex-math>${f}_{text {T}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${f}_{max }$ </tex-math></inline-formula> values of 47.6 GHz/68.1GHz, with a state-of-the-art output power density (<inline-formula> <tex-math>${P}_{text {out}}text {)}$ </tex-math></inline-formula> of 15.1 W/mm and a Power-Added efficiency (PAE) of 57.2% at 2 GHz. These results demonstrate the immense potential of HG stepped-C buffer in advancing the RF performance for GaN-on-GaN HEMTs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"365-368"},"PeriodicalIF":4.1,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-12-31 DOI: 10.1109/LED.2024.3516923

引用次数: 0

IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-12-31 DOI: 10.1109/LED.2024.3516915

引用次数: 0

IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-12-31 DOI: 10.1109/LED.2024.3516921

引用次数: 0

Record 60.3 mV/dec Subthreshold Swing and >20% Performance Enhancement in Gate-All-Around Nanosheet CMOS Devices Using O₃-Based Quasi-Atomic Layer Etching Treatment Technique

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-12-31 DOI: 10.1109/LED.2024.3524259

R. J. Jiang;G. Q. Sang;L. Cao;J. X. Yao;K. Yang;Y. H. Lu;X. X. Zhang;P. Wang;J. J. Li;X. B. He;N. Zhou;Y. D. Zhang;Z. H. Zhang;C. C. Zhang;L. L. Li;Q. K. Li;J. F. Li;Q. Z. Zhang;H. X. Yin;J. Luo;B. W. Dai

{"title":"Record 60.3 mV/dec Subthreshold Swing and >20% Performance Enhancement in Gate-All-Around Nanosheet CMOS Devices Using O₃-Based Quasi-Atomic Layer Etching Treatment Technique","authors":"R. J. Jiang;G. Q. Sang;L. Cao;J. X. Yao;K. Yang;Y. H. Lu;X. X. Zhang;P. Wang;J. J. Li;X. B. He;N. Zhou;Y. D. Zhang;Z. H. Zhang;C. C. Zhang;L. L. Li;Q. K. Li;J. F. Li;Q. Z. Zhang;H. X. Yin;J. Luo;B. W. Dai","doi":"10.1109/LED.2024.3524259","DOIUrl":"https://doi.org/10.1109/LED.2024.3524259","url":null,"abstract":"To overcome the critical channel interface issues in gate-all-around (GAA) devices that are induced by germanium (Ge) residue on the nanosheet (NS) channels, a precise quasi-atomic layer etching (qALE) technique based on O3 was developed in this work. This technique has a self-limited oxidation thickness of 6.1 Å and is able to remove the residual Ge atoms. The improved interface quality leads to a 99% reduction in the interface state density (<inline-formula> <tex-math>${D} _{textit {it}}$ </tex-math></inline-formula>) and a reduction in the current density (<inline-formula> <tex-math>${J} _{g}$ </tex-math></inline-formula>) of two orders of magnitude. Therefore, the GAA devices fabricated using this method achieve a record low subthreshold swing (SS) of 60.3 mV/dec, with the maximum reduction in the SS reaching up to 21% when compared with that of unprocessed devices after a two-cycle qALE treatment. Moreover, the treatment also results in an enhancement of more than 20% in the on-current (<inline-formula> <tex-math>${I} _{textit {on}}$ </tex-math></inline-formula>) and a 66.7% reduction in the off-current (<inline-formula> <tex-math>${I} _{textit {off}}$ </tex-math></inline-formula>). These results and the proposed method provide effective technical guidance for improving the interface characteristics, leakage characteristics, and performance of future mass-produced GAA NS field-effect transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"341-344"},"PeriodicalIF":4.1,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

EDS Meetings Calendar EDS会议日程表

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-12-31 DOI: 10.1109/LED.2024.3516919

引用次数: 0