IEEE Electron Device Letters最新文献_第9页

Carbon Ion Implantation-Modified Hafnium Oxide to Construct a RELESIS for pH Sensing

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI: 10.1109/LED.2024.3471172

Siwei Cui;Hui Yang;Dongping Wu

引用次数: 0

“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI: 10.1109/LED.2024.3480253

Yunfeng Hu;Liang He;Meng Dong;Xinghuan Chen;Yijun Shi;Zhiyuan He;Zongqi Cai;Yiqiang Ni;Hongyue Wang;Zhizhe Wang;Yuan Li;Xiaoli Lu;Yuan Chen;Yiqiang Chen

{"title":"“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs","authors":"Yunfeng Hu;Liang He;Meng Dong;Xinghuan Chen;Yijun Shi;Zhiyuan He;Zongqi Cai;Yiqiang Ni;Hongyue Wang;Zhizhe Wang;Yuan Li;Xiaoli Lu;Yuan Chen;Yiqiang Chen","doi":"10.1109/LED.2024.3480253","DOIUrl":"https://doi.org/10.1109/LED.2024.3480253","url":null,"abstract":"This work investigates the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {th}}text {)}$ </tex-math></inline-formula>\u0000 instability in Schottky-type p-GaN gate HEMTs subjected to positive/negative gate switching stress. Under the gate switching stress, a characteristic “M”-shaped \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 curve with elevated \u0000<inline-formula> <tex-math>${V}_{text {GS,ON}}$ </tex-math></inline-formula>\u0000 is revealed. This pattern is ascribed to the competitive transport of electrons and holes. Considering the condition of reduced \u0000<inline-formula> <tex-math>${V}_{text {GS, OFF}}$ </tex-math></inline-formula>\u0000, an increasing \u0000<inline-formula> <tex-math>${V} _{text {th}}$ </tex-math></inline-formula>\u0000 has also been observed, which is attributed to the curtailed electron emission while the promoted hole release. Further, with the increasing of the duty cycle, a positive \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 shift at the lower \u0000<inline-formula> <tex-math>${V}_{text {GS, ON}}$ </tex-math></inline-formula>\u0000 and a negative shift at higher \u0000<inline-formula> <tex-math>${V}_{text {GS, ON}}$ </tex-math></inline-formula>\u0000 are needs to be taken seriously, and it also confirm the competitive mechanism in the abnormal “M”-shaped \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 instability. The research highlights that the impact of positive/negative gate switching stress on \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 instability are significant and cannot be neglected.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2299-2302"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI: 10.1109/LED.2024.3479886

Haoyuan Cheng;Hengyu Wang;Ce Wang;Jiangbin Wan;Chi Zhang;Kuang Sheng

引用次数: 0

Mg-Ion-Based Electrochemical Synapse With Superior Retention

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI: 10.1109/LED.2024.3479248

Heebum Kang;Kyumin Lee;Seungkwon Hwang;Hyunsang Hwang

{"title":"Mg-Ion-Based Electrochemical Synapse With Superior Retention","authors":"Heebum Kang;Kyumin Lee;Seungkwon Hwang;Hyunsang Hwang","doi":"10.1109/LED.2024.3479248","DOIUrl":"https://doi.org/10.1109/LED.2024.3479248","url":null,"abstract":"We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (\u0000<inline-formula> <tex-math>$sigma _{text {ion}}text {)}$ </tex-math></inline-formula>\u0000 and low electrical conductivity (\u0000<inline-formula> <tex-math>$sigma text {)}$ </tex-math></inline-formula>\u0000. Additionally, crystalline WO\u0000<inline-formula> <tex-math>$_{{2}.{8}}$ </tex-math></inline-formula>\u0000 (C-WO\u0000<inline-formula> <tex-math>$_{{2}.{8}}text {)}$ </tex-math></inline-formula>\u0000 is used as the channel material because of its excellent ion diffusivity (D\u0000<inline-formula> <tex-math>$_{text {ion}}text {)}$ </tex-math></inline-formula>\u0000. Comprehensively, our findings reveal nearly perfect weight update linearity and exceptional retention capabilities, lasting approximately six years. These results indicate that Mg-ions are suitable for ECRAM systems, offering desirable and dependable synaptic properties. Moreover, the physical intercalation of Mg-ions into the WO\u0000<inline-formula> <tex-math>$_{{2}.{8}}$ </tex-math></inline-formula>\u0000 channel is confirmed in real-time by the sequential modulation of Raman peaks, which correspond to the levels of potentiation or depression.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2557-2560"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Cost High-Performance p-GaSe/i-GeSn/n-GOI Heterojunction Photodiode for Visible to Short-Wave Infrared Multispectral Detection 用于可见光至短波红外多光谱检测的低成本高性能 p-GaSe/i-GeSn/n-GOI 异质结光电二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI: 10.1109/LED.2024.3480361

Jiaxin Qin;Xinwei Cai;Huiling Pan;Tianwei Yang;Songyan Chen;Wei Huang;Guangyang Lin;Cheng Li

{"title":"Low-Cost High-Performance p-GaSe/i-GeSn/n-GOI Heterojunction Photodiode for Visible to Short-Wave Infrared Multispectral Detection","authors":"Jiaxin Qin;Xinwei Cai;Huiling Pan;Tianwei Yang;Songyan Chen;Wei Huang;Guangyang Lin;Cheng Li","doi":"10.1109/LED.2024.3480361","DOIUrl":"https://doi.org/10.1109/LED.2024.3480361","url":null,"abstract":"In this work, a low-cost and high-performance p-GaSe/i-GeSn/n-Ge-on-insulator van der Waals (vdW) heterojunction photodetector (PD) is demonstrated with a Sn-composition-graded i-GeSn absorption region. Featuring a sputtering-grown Ge0.848 Sn0.152 top layer, the PD extends its cutoff wavelength beyond 2400 nm, simultaneously boosting its response to visible (VIS) light. This enhancement is achieved through using wide bandgap GaSe flake as the p-type region, resulting in a flat broadband photo-response spectrum from VIS to short-wave infrared (SWIR) bands. Moreover, an ultralow dark current density of 0.55 mA/cm2 is achieved owing to the large bandgap of GaSe and graded barriers within the GeSn layers. The specific detectivity at 2000 nm reaches \u0000<inline-formula> <tex-math>${3.5}times {10}^{{10}}$ </tex-math></inline-formula>\u0000 Jones, alongside a rapid response time of \u0000<inline-formula> <tex-math>$49.5mu $ </tex-math></inline-formula>\u0000s under −1 V bias at room temperature. These outcomes highlight the potential of the mixed-dimensional GeSn vdW heterojunction PD as a new pathway for low-cost multispectral detection ranging from VIS to SWIR wavelengths.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2443-2446"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bottom-Gate Poly-Si Thin Film Transistors Fabricated by Blue Laser Diode Annealing and Their Reliability Under DC and AC Bias Stresses 用蓝色激光二极管退火法制造的底栅多晶硅薄膜晶体管及其在直流和交流偏压下的可靠性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI: 10.1109/LED.2024.3480123

Mohammad Masum Billah;Seongbok Kang;Jin Jang;Moath Alathbah

{"title":"Bottom-Gate Poly-Si Thin Film Transistors Fabricated by Blue Laser Diode Annealing and Their Reliability Under DC and AC Bias Stresses","authors":"Mohammad Masum Billah;Seongbok Kang;Jin Jang;Moath Alathbah","doi":"10.1109/LED.2024.3480123","DOIUrl":"https://doi.org/10.1109/LED.2024.3480123","url":null,"abstract":"We investigate the electrical reliability of inverted staggered low-temperature poly-Si (LTPS) thin-film transistors (TFT) under direct and alternate current (DC and AC gate pulses) operations fabricated by blue laser diode annealing (BLDA). From scanning electron microscopy (SEM), and atomic force microscopy (AFM) images, smaller grain sizes (~70 nm) and smoother poly-Si surface (~1.18 nm) are achieved for solid-phase crystallization (SPC) by BLDA crystallization. However, partial melting (PM) of the silicon active layer exhibits a large grain size (~200 nm) with comparatively taller surface roughness (~7.73 nm). As compared to SPC devices, PM devices exhibit more electrical degradation including drain current (I\u0000<inline-formula> <tex-math>$_{text {DS}}text {)}$ </tex-math></inline-formula>\u0000 instability and threshold voltage shift (\u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000V\u0000<inline-formula> <tex-math>$_{text {Th}}text {)}$ </tex-math></inline-formula>\u0000 under AC stress. Although, PM TFTs exhibit higher IDS, and field-effect mobility (\u0000<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula>\u0000, the protruded poly-Si layer causes severe carrier trapping/detrapping at grain boundary (GB) under AC stress. Besides, both the devices show stable electrical behavior under negative bias temperature stress (NBTS). We performed the technology computer-aided design (TCAD) simulation to validate the physical mechanism.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2415-2418"},"PeriodicalIF":4.1,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiple Host Materials Engineering Boosts the Light-Emitting Diodes Performance of Metal Nanocluster

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI: 10.1109/LED.2024.3478309

Yi Yang;Fujun Zhang;Yu Liu;Feng Jiang;Tingxuan Li;Kunyu Wang;Min Lu;Yuan Zhong;Xiaomei Chai;Zhennan Wu;Yu Zhang;Xue Bai

引用次数: 0

Atomic Layer Deposited ZnO Negative Capacitance Thin-Film Transistors With Hf0.5Zr0.5O2-Based Ferroelectric Gates 原子层沉积氧化锌负电容薄膜晶体管与基于 Hf0.5Zr0.5O2 的铁电栅极

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI: 10.1109/LED.2024.3478316

Kun Wang;Sizhe Li;Liwei Ji;Jiaxian Wan;Zexin Tu;Hao Wu;Chang Liu

{"title":"Atomic Layer Deposited ZnO Negative Capacitance Thin-Film Transistors With Hf0.5Zr0.5O2-Based Ferroelectric Gates","authors":"Kun Wang;Sizhe Li;Liwei Ji;Jiaxian Wan;Zexin Tu;Hao Wu;Chang Liu","doi":"10.1109/LED.2024.3478316","DOIUrl":"https://doi.org/10.1109/LED.2024.3478316","url":null,"abstract":"High-performance ZnO thin-film transistors (TFTs) with Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O2 (HZO)-based ferroelectric gates have been designed and fabricated. In order to increase the thickness of HZO without sacrificing their ferroelectric properties and reducing the leakage current of the devices, multilayer nanolaminate structure was designed, which allows the HZO dielectric layer to still have a high remnant polarization (\u0000<inline-formula> <tex-math>$2{P}_{text {r}}= 50.2~mu $ </tex-math></inline-formula>\u0000C/cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000 at a thickness of 30 nm. By introducing multilayer nanolaminate HZO film, the devices exhibit excellent performance, including an ultralow subthreshold swing (SS) of 96.4 mV/dec at room temperature, which is only 47% of the SS of conventional TFTs under the same process conditions, a large \u0000<inline-formula> <tex-math>${I}_{text {ON}}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>${I}_{text {OFF}}$ </tex-math></inline-formula>\u0000 ratio of \u0000<inline-formula> <tex-math>$10^{{8}}$ </tex-math></inline-formula>\u0000, a high field-effect mobility of 16.3 cm2V\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000s\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000 and a proper threshold voltage of 0.5 V. Our results demonstrate the feasibility of augmenting switching speed and reducing the power consumption of ZnO TFTs by introducing HZO ferroelectric gates.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2399-2402"},"PeriodicalIF":4.1,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Prototype of Flexible Digital X-Ray Imaging Detector

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI: 10.1109/LED.2024.3478777

Seyeoul Kwon;Charles Andrew Parker;Kristofer Paetow;Hunter Reed;Sara Chahid;Geun Jo Han;Agus Widjaja;Jinhui Cho;Kevin Cadena;Kevin Granaas;Jerome Crocco

{"title":"Prototype of Flexible Digital X-Ray Imaging Detector","authors":"Seyeoul Kwon;Charles Andrew Parker;Kristofer Paetow;Hunter Reed;Sara Chahid;Geun Jo Han;Agus Widjaja;Jinhui Cho;Kevin Cadena;Kevin Granaas;Jerome Crocco","doi":"10.1109/LED.2024.3478777","DOIUrl":"https://doi.org/10.1109/LED.2024.3478777","url":null,"abstract":"This letter presents the development of a flexible digital X-ray imaging detector based on flat panel display manufacturing principles. The detector array was fabricated using amorphous silicon thin-film transistors (a-Si TFTs) on flexible polyimide (PI) substrate. The TFT characteristics of the flexible detector array show comparable performance to the glass substrate detector array. The field effect mobility (\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000) of a-Si TFT on flexible substrate was 0.66 cm2/V\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000s, the thresholder voltage (VT) was 4.21 V, the subthreshold slops (SS) was 0.42 V/decade, and the off-current (IOFF) was about \u0000<inline-formula> <tex-math>$6.5times 10^{-{14}}$ </tex-math></inline-formula>\u0000 A. The X-ray image was 161 mm \u0000<inline-formula> <tex-math>$times$ </tex-math></inline-formula>\u0000 215 mm in size. The environmental reliability of the flexible detector were tested using thermal and conditions of 65°C at a relative humidity (RH) of 70%. Furthermore, temperature cycling between −20°C/+60°C was used to test the flexible detectors and which also shown acceptable passing results for commercialization. The preliminary studying results demonstrate the feasibility of a flexible X-ray imaging detector, which could have significant implications for the medical imaging industry.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2439-2442"},"PeriodicalIF":4.1,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142790238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Ag Nanoparticle Texturing on Al₂O₃ Nanowires for Improved Photodetection 银纳米颗粒纹理对改进光电探测的铝纳米线的影响

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI: 10.1109/LED.2024.3478387

Abhijit Das;Avijit Dalal;Aniruddha Mondal;Laishram Robindro Singh;Mitra Barun Sarkar

{"title":"Effect of Ag Nanoparticle Texturing on Al₂O₃ Nanowires for Improved Photodetection","authors":"Abhijit Das;Avijit Dalal;Aniruddha Mondal;Laishram Robindro Singh;Mitra Barun Sarkar","doi":"10.1109/LED.2024.3478387","DOIUrl":"https://doi.org/10.1109/LED.2024.3478387","url":null,"abstract":"This work utilized the glancing angle deposition (GLAD) method to grow an Al2O3 nanowires (NW) device and an Ag nanoparticles (NP) textured Al2O3 NW device on an n-Si substrate. The growth of the proposed nanostructures is facilitated by virtue of the shadowing effect of the GLAD process. The polycrystalline crystal structure was determined through independent crystallographic investigations. After Ag NP texturing on Al2O3 NW, an improvement in optical absorption and Raman emission was observed. Ag texturing on Al2O3 NW considerably improved the most important photodetection parameters, including photosensitivity, responsivity, quantum efficiency, detectivity, and noise equivalent of power (NEP). This overall improvement in the photodetection parameters is primarily due to the enhancement in the photocurrent by localized surface plasmon resonance (LSPR) exhibited by Ag NP. The proposed device with Ag NP also exhibited an ultrafast photo response. Therefore, the finding reveals that the Ag NP textured Al2O3 NW device is a feasible option for high-speed photodetection applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2435-2438"},"PeriodicalIF":4.1,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0