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Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation 用于多电平运行的氧原子掺杂铁电 AIScN 电容器
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-09-02 DOI: 10.1109/LED.2024.3453111
Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima
{"title":"Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation","authors":"Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima","doi":"10.1109/LED.2024.3453111","DOIUrl":"10.1109/LED.2024.3453111","url":null,"abstract":"The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization (\u0000<inline-formula> <tex-math>${P}_{text {r}})$ </tex-math></inline-formula>\u0000 exceeding \u0000<inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>\u0000C/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field (\u0000<inline-formula> <tex-math>${E}_{text {c}})$ </tex-math></inline-formula>\u0000 from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant (\u0000<inline-formula> <tex-math>$varepsilon _{text {i}})$ </tex-math></inline-formula>\u0000 from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field (\u0000<inline-formula> <tex-math>${E}_{text {BD}})$ </tex-math></inline-formula>\u0000 enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between \u0000<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>\u0000 and the electric field (\u0000<inline-formula> <tex-math>${E})$ </tex-math></inline-formula>\u0000 enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high \u0000<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>\u0000 and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2090-2093"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10662902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adaptable Ammonia Detection With QDs-Sensitized Polyaniline Mat: A Flexible Gas Sensor for Diverse Applications 利用 QDs 感光聚苯胺垫检测氨气：适用于各种应用的灵活气体传感器
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-09-02 DOI: 10.1109/LED.2024.3452761
Long Yang;Ze Wang;Fanchong Zeng;Zitong Kan;Chencheng Hu;Yu Qi;Biao Dong;Xue Bai;Hongwei Song;Lin Xu
{"title":"Adaptable Ammonia Detection With QDs-Sensitized Polyaniline Mat: A Flexible Gas Sensor for Diverse Applications","authors":"Long Yang;Ze Wang;Fanchong Zeng;Zitong Kan;Chencheng Hu;Yu Qi;Biao Dong;Xue Bai;Hongwei Song;Lin Xu","doi":"10.1109/LED.2024.3452761","DOIUrl":"10.1109/LED.2024.3452761","url":null,"abstract":"In this study, TPU/MCNTs/PANI/GQDs (TMPG) composites were synthesized through electrospinning and in-situ polymerization, developing a flexible sensor for reliable NH3 detection at room temperature (RT). At 60% relative humidity, the TMPG sensor shows a response of 51.3% to 10 ppm NH3, attributed to unique three-dimensional (3D) porous structure and enhanced PANI protonation. Moreover, the sensor exhibits good selectivity and repeatability, performing well even after 1000 bending cycles. It has also been effectively applied in monitoring mutton freshness and wearable NH3 safety alarming. This research provides an opportunity for designing a high-performance NH3 gas detection platform for flexible wearable electronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2185-2188"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Wafer-Level Ta-Ta Direct Thermocompression Bonding for 3D Integration of Superconducting Interconnects for Scalable Quantum Computing System 用于可扩展量子计算系统超导互连器件三维集成的新型晶圆级 Ta-Ta 直接热压焊接技术
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-09-02 DOI: 10.1109/LED.2024.3453174
Harsh Mishra;Satish Bonam;Vinit Kumar;Shiv Govind Singh
{"title":"Novel Wafer-Level Ta-Ta Direct Thermocompression Bonding for 3D Integration of Superconducting Interconnects for Scalable Quantum Computing System","authors":"Harsh Mishra;Satish Bonam;Vinit Kumar;Shiv Govind Singh","doi":"10.1109/LED.2024.3453174","DOIUrl":"10.1109/LED.2024.3453174","url":null,"abstract":"As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 °C) and pressure (0.3 MPa) results in the emergence of \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000-tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2221-2224"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors 嵌入式沟道铁电场效应晶体管的低频噪声特性
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-09-02 DOI: 10.1109/LED.2024.3452776
Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon
{"title":"Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors","authors":"Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon","doi":"10.1109/LED.2024.3452776","DOIUrl":"10.1109/LED.2024.3452776","url":null,"abstract":"This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {TH}}text {)}$ </tex-math></inline-formula>\u0000 is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (\u0000<inline-formula> <tex-math>${f}_{text {c}}~approx ~480$ </tex-math></inline-formula>\u0000 Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z \u0000<inline-formula> <tex-math>$approx ~1.5$ </tex-math></inline-formula>\u0000 nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2118-2121"},"PeriodicalIF":4.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-Ray Detector With Internal Gain Based on a SiC npn Structure 基于碳化硅 npn 结构的具有内部增益的 X 射线探测器
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-08-29 DOI: 10.1109/LED.2024.3451623
Jing Wang;Liang Chen;Song Bai;Leidang Zhou;Fangbao Wang;Silong Zhang;Tingting Fan;Runhua Huang;Shaohua Yang;Geng Tian;Xiaoping Ouyang
{"title":"X-Ray Detector With Internal Gain Based on a SiC npn Structure","authors":"Jing Wang;Liang Chen;Song Bai;Leidang Zhou;Fangbao Wang;Silong Zhang;Tingting Fan;Runhua Huang;Shaohua Yang;Geng Tian;Xiaoping Ouyang","doi":"10.1109/LED.2024.3451623","DOIUrl":"10.1109/LED.2024.3451623","url":null,"abstract":"A two-terminal npn device based on 4H-SiC has been employed as a radiation detector for the first time. This device was designed as a vertical npn structure with a sensitive area of up to 1 cm2, and the thickness of the sensitive layer was about \u0000<inline-formula> <tex-math>$30~mu $ </tex-math></inline-formula>\u0000m. The detector exhibited a low dark current of \u0000<inline-formula> <tex-math>$sim ~0.12$ </tex-math></inline-formula>\u0000 nA\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000 with a fully depleted sensitive region at 200 V. The sensitivity of unit area of the detector achieved \u0000<inline-formula> <tex-math>$36.67~mu $ </tex-math></inline-formula>\u0000C\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Gy\u0000<inline-formula> <tex-math>$^{-{1}} cdot $ </tex-math></inline-formula>\u0000cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$28.09~mu $ </tex-math></inline-formula>\u0000A @ 0.766 Gy/s) to X-ray illumination (generated by bremsstrahlung with a tungsten target with tube voltage 30 kV) at 200 V, which was attributed to the amplification mechanism of the npn structure. Compared with the response characteristics of a SiC-PiN detector with the same sensitive volume, the gain of the two-terminal SiC npn detector was estimated to be 11.46 at 200 V. Specifically, the internal gain of the detector increased with the X-ray dose rate, where the X-ray photocurrent worked as the base current in the BJT devices. The internal gain also increased with the bias voltage due to the Early effect. Moreover, the two-terminal SiC npn detectors had a good switching response to X-rays and showed great potential in the applications of radiation detection.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2142-2145"},"PeriodicalIF":4.1,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode 利用可切换二极管中的肖特基发射电流进行纳米级铁电 Hf0.5Zr0.5O2 的变异性分析和改进策略
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-08-29 DOI: 10.1109/LED.2024.3451968
Kyumin Lee;Sang-Ho Oh;Hojung Jang;Sunhyeong Lee;Byeong-Joo Lee;Hyunsang Hwang
{"title":"Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode","authors":"Kyumin Lee;Sang-Ho Oh;Hojung Jang;Sunhyeong Lee;Byeong-Joo Lee;Hyunsang Hwang","doi":"10.1109/LED.2024.3451968","DOIUrl":"10.1109/LED.2024.3451968","url":null,"abstract":"In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE) Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2078-2081"},"PeriodicalIF":4.1,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Programming Pulse Shape for Vertical NAND Flash Memory Using Neural Networks 利用神经网络优化垂直 NAND 闪存的编程脉冲形状
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-08-28 DOI: 10.1109/LED.2024.3451430
Sung-Ho Park;Jaehyeon Kim;Jonghyun Ko;Jiseong Im;Yeongheon Yang;Jae-Joon Kim;Jong-Ho Lee
{"title":"Optimization of Programming Pulse Shape for Vertical NAND Flash Memory Using Neural Networks","authors":"Sung-Ho Park;Jaehyeon Kim;Jonghyun Ko;Jiseong Im;Yeongheon Yang;Jae-Joon Kim;Jong-Ho Lee","doi":"10.1109/LED.2024.3451430","DOIUrl":"10.1109/LED.2024.3451430","url":null,"abstract":"We optimize the shape of the pulse to maximally increase threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {th}}text {)}$ </tex-math></inline-formula>\u0000 during the incremental step pulse programming (ISPP) of vertical NAND (V-NAND) flash memory using neural networks (NNs). NN is trained using data on the increase in \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 of commercial V-NAND flash memory in response to randomly shaped programming pulses (PPs). The trained NN is utilized to optimize the shape of the PP. The principle behind the improvement in \u0000<inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula>\u0000 increase due to the optimized PP, as well as the improvement results, are confirmed through measurements. When the optimized PP is applied to ISPP operation, it results in a 37% increase in ISPP slope. Furthermore, the optimized PP exhibits lower program disturbance, indicating the potential for faster programming with lower energy consumption.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2102-2105"},"PeriodicalIF":4.1,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding 通过金属-H 键合的有利耦合效应实现 a-IGZTO 晶体管对漏极诱导的势垒降低效应的超常免疫力
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-08-27 DOI: 10.1109/LED.2024.3450659
Gwang-Bok Kim;Se Eun Kim;Yena Kim;Kyeong-Seok Son;Joon Seok Park;Sunhee Lee;Jae Kyeong Jeong
{"title":"Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding","authors":"Gwang-Bok Kim;Se Eun Kim;Yena Kim;Kyeong-Seok Son;Joon Seok Park;Sunhee Lee;Jae Kyeong Jeong","doi":"10.1109/LED.2024.3450659","DOIUrl":"10.1109/LED.2024.3450659","url":null,"abstract":"This study shows the beneficial coupling effects of Sn-induced metal-H (M-H) bonding on the drain-induced barrier lowering (DIBL) of amorphous In-Ga-Zn-Sn-O (a-IGZTO) thin-film transistors (TFTs) with short channel length. The a-IGZTO TFTs had a small DIBL factor of 52 mV/V as well as outstanding performance with a high field-effect mobility of 76.9 cm2/Vs, a steep subthreshold swing of 128 mV/decade, and a threshold voltage of 0.05 V. In addition, highly stable behavior against positive gate bias temperature and negative bias illumination temperature stress was observed for a-IGZTO TFTs. This could be attributed to favorable coupling effects of Sn-induced M-H bonding and the formation of a synergistic percolation pathway by In3+ and Sn4+.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2130-2133"},"PeriodicalIF":4.1,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset 具有深沟指针的 SOI 侧向霍尔器件，可实现高灵敏度和低偏移
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-08-27 DOI: 10.1109/LED.2024.3449972
Guiqiang Zheng;Jie Ma;Yichen Li;Nannan Cheng;Qingyin Zhong;Lanlan Yang;Nailong He;Dejin Wang;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun
{"title":"SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset","authors":"Guiqiang Zheng;Jie Ma;Yichen Li;Nannan Cheng;Qingyin Zhong;Lanlan Yang;Nailong He;Dejin Wang;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun","doi":"10.1109/LED.2024.3449972","DOIUrl":"10.1109/LED.2024.3449972","url":null,"abstract":"In this letter, a novel silicon-on-insulator (SOI) lateral Hall device (LHD) with deep trench fingers (DTFs) is proposed. The DTFs in magnetic-sensitive well mitigate the short-circuit effect and make current-related sensitivity (S\u0000<inline-formula> <tex-math>$_{text {I}}text {)}$ </tex-math></inline-formula>\u0000 insensitive to the signal electrode size. The SI of the proposed LHD is over 1000V/AT, the input resistance (R\u0000<inline-formula> <tex-math>$_{text {in}}text {)}$ </tex-math></inline-formula>\u0000 is around 40.5k\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000 and offset is lower than 2.5mV. With four-phase spinning current method, the residual offset is reduced to \u0000<inline-formula> <tex-math>$17~mu $ </tex-math></inline-formula>\u0000V and the proposed LHD has high linearity output at a magnetic field from 10mT to 300mT. In addition, the proposed LHD presents high stability across temperature ranging from 25°C to 225°C.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2166-2169"},"PeriodicalIF":4.1,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation 通过合成数据生成弥补光伏领域的数据差距
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2024-08-26 DOI: 10.1109/LED.2024.3440815
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/LED.2024.3440815","DOIUrl":"https://doi.org/10.1109/LED.2024.3440815","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 9","pages":"1681-1682"},"PeriodicalIF":4.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10648922","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142077669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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