IEEE Electron Device Letters最新文献_第9页

AlGaN/GaN Double-Channel Ultraviolet Photodetector With Polarization-Enhanced Photoresponsivity 具有偏振增强光响应性的AlGaN/GaN双通道紫外探测器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3573335

Xiuyi Bian;Shunjie Yu;Xiaoyu Liu;Xi Tang;Shibing Long;Shu Yang

{"title":"AlGaN/GaN Double-Channel Ultraviolet Photodetector With Polarization-Enhanced Photoresponsivity","authors":"Xiuyi Bian;Shunjie Yu;Xiaoyu Liu;Xi Tang;Shibing Long;Shu Yang","doi":"10.1109/LED.2025.3573335","DOIUrl":"https://doi.org/10.1109/LED.2025.3573335","url":null,"abstract":"In this work, an ultraviolet photodetector (UV PD) based on an AlGaN/GaN double-channel (DC) heterostructure is demonstrated. The carriers in both channels are partially depleted by a recessed trench to suppress the dark current. A high photoresponsivity of <inline-formula> <tex-math>${2}.{6}{times }{10}^{mathbf {{4}}}$ </tex-math></inline-formula> A/W is realized in the DC PD under 365-nm light illumination even with a low intensity of 3.8<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>W/<inline-formula> <tex-math>${mathrm {cm}}^{mathbf {{2}}}$ </tex-math></inline-formula>, which is ~30 times higher than that of a single-channel (SC) counterpart. Moreover, a high specific detectivity of <inline-formula> <tex-math>${3}.{4}{times }{10} ^{mathbf {{15}}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {Hz}}^{mathsf {rac{{1}}{{2}}}}$ </tex-math></inline-formula>/W and a relatively short decay time constant of ~2.3 ms have been achieved in the DC PD. The high photoresponsivity is possibly correlated with the spatial separation of the photogenerated carriers under the internal polarization field at the dual AlGaN/GaN heterointerface, as well as the photo-induced leakage current across the recessed trench. The GaN-based DC PD and the mechanism analysis in this work can provide valuable insights towards enhanced photoresponsivity especially for weak-light detection.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1135-1138"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551221

引用次数: 0

Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551217

引用次数: 0

Accurate Bias Stress Instability Measurements in High-Performance ITO FETs Using Modified On-the-Fly Technique 利用改进的动态技术精确测量高性能ITO场效应管中的偏置应力不稳定性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3554214

Md Sazzadur Rahman;Arijit Sarkar;Dinuk R. De Silva;Austin T. Harrison;Yu-Hsin Kuo;Jiazheng Chen;Asif Islam Khan;Tania Roy

{"title":"Accurate Bias Stress Instability Measurements in High-Performance ITO FETs Using Modified On-the-Fly Technique","authors":"Md Sazzadur Rahman;Arijit Sarkar;Dinuk R. De Silva;Austin T. Harrison;Yu-Hsin Kuo;Jiazheng Chen;Asif Islam Khan;Tania Roy","doi":"10.1109/LED.2025.3554214","DOIUrl":"https://doi.org/10.1109/LED.2025.3554214","url":null,"abstract":"We report on Indium Tin Oxide (ITO) dual-gated field-effect transistors (DG-FETs) achieving a high ION of 1.2 mA/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m at a gate overdrive, VOV of 2.5 V, with a top-gate effective oxide thickness of 0.85 nm. When stressed with VOV = 3.5 V, the devices exhibit ultralow threshold voltage shift (<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>Vth) of just 19 mV, as measured by the conventional measure-stress-measure (MSM) technique commonly used in the amorphous oxide semiconductor (AOS) community. However, employing a modified on-the-fly (OTF) method for reliability testing reveals a 500% increase in <inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>Vth for the same ITO device, due to the Vth recovery occurring within milliseconds after stress is removed. This substantial difference, also observed in multiple devices, highlights the possible underreporting of threshold shifts in the MSM method due to fast Vth recovery. Thus, our results underscore the importance of recovery-analysis for reliability study of AOS devices and choosing OTF method for devices with fast recovery. Our study establishes a robust framework for measuring and understanding the root causes of Vth instabilities in ITO transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"864-867"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications 探索令人兴奋的多功能氧化物基电子器件世界：从材料到系统级应用

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551219

引用次数: 0

IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551187

引用次数: 0

Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing 诚聘IEEE半导体制造汇刊主编

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551195

引用次数: 0

A 0.035°/h Quad-Mass Gyroscope With an Initial Frequency Difference Operating Under Mode Matching 一种在模式匹配下工作的初始频差0.035°/h四质量陀螺仪

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3554794

Bo Jiang;Zhuolin Yu;Jing Zhang;Chen Lin;Yan Su

{"title":"A 0.035°/h Quad-Mass Gyroscope With an Initial Frequency Difference Operating Under Mode Matching","authors":"Bo Jiang;Zhuolin Yu;Jing Zhang;Chen Lin;Yan Su","doi":"10.1109/LED.2025.3554794","DOIUrl":"https://doi.org/10.1109/LED.2025.3554794","url":null,"abstract":"For MEMS (Micro-Electromechanical System) Coriolis vibrating gyroscopes, mode matching provides exceptionally high mechanical sensitivity. Typically, mode-matching gyroscopes require a completely symmetrical structure, resulting in two identical degenerate modes from a dynamics perspective. However, this requirement imposes strict demands on manufacturing precision. This letter introduces a quad-mass gyroscope with an initial frequency split, which relaxes the symmetry requirements of the micro-manufacturing process while maintaining high performance. The proposed design features an ultra-strong, quasi-linear tuning capability achieved through bias voltage and a differentiated design for the drive and readout comb capacitors. These innovations minimize mechanical noise and maximize capacitive gain sensitivity. Additionally, direct current bias voltage is applied to suppress quadrature errors caused by torsional stiffness. This state-of-the-art design achieves a low-noise, low-demodulation-error quad-mass gyroscope, capable of detecting angular rate thresholds as low as 0.001°/s. Experimental results demonstrate a bias instability of 0.035°/h, as indicated by the Allan variance curve, and an angular random walk noise of 0.0093°/<inline-formula> <tex-math>$surd $ </tex-math></inline-formula>h. Beyond its superior performance, this design effectively mitigates micromachining process imperfections, making it highly suitable for mass production.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"837-840"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551223

引用次数: 0

10-second Cu/Polymer Hybrid Bonding Using Area-Selective Metal Passivation for 3D Integration 采用区域选择性金属钝化技术进行3D集成的10秒铜/聚合物杂化键合

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3554768

Yu-Lun Liu;Tzu-Yu Chen;Kazuaki Ebisawa;Makiko Irie;Ya-Chien Chuang;Hsiao-Wei Yeh;Satoshi Fujimura;Kuan-Neng Chen

引用次数: 0