IEEE Electron Device Letters最新文献_第9页

Low Capacitance and Fast Response SCR for High-Speed I/O ESD Protections 用于高速I/O ESD保护的低电容和快速响应可控硅

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-18 DOI: 10.1109/LED.2025.3542844

Ruibo Chen;Feibo Du;Lu Li;Zhiwei Liu;Zhangming Zhu

引用次数: 0

Investigation of Resistive Switching in Au/MoS₂/Au Using Reactive Molecular Dynamics and ab-initio Quantum Transport Calculations 利用反应分子动力学和从头算量子输运计算研究Au/MoS 2 /Au中的电阻开关

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-17 DOI: 10.1109/LED.2025.3542957

Ashutosh Krishna Amaram;Saurabh Kharwar;Tarun Kumar Agarwal

引用次数: 0

Understanding of GIDL-State Degradation (GSD): The Reliability Challenge in pFET Standby Mode for Sub-20-nm DRAM Technology 对gidl状态退化（GSD）的理解：亚20nm DRAM技术pet待机模式的可靠性挑战

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-17 DOI: 10.1109/LED.2025.3539678

Da Wang;Yong Liu;Longda Zhou;Yongkang Xue;Pengpeng Ren;Runsheng Wang;Zhigang Ji;Ru Huang

引用次数: 0

64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V) 具有高约翰逊品质因数的64% AlGaN通道HFET （bbb60 THz·V）

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541145

Jiahao Chen;Parthasarathy Seshadri;Kenneth Stephenson;Md Abdullah Mamun;Ruixin Bai;Zehuan Wang;Asif Khan;Chirag Gupta

{"title":"64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)","authors":"Jiahao Chen;Parthasarathy Seshadri;Kenneth Stephenson;Md Abdullah Mamun;Ruixin Bai;Zehuan Wang;Asif Khan;Chirag Gupta","doi":"10.1109/LED.2025.3541145","DOIUrl":"https://doi.org/10.1109/LED.2025.3541145","url":null,"abstract":"In this letter, we report a heterostructure field effect transistor (HFET) with Al0.87Ga0.13N barrier and Al0.64Ga0.36N channel grown by metalorganic chemical vapor deposition (MOCVD). TLM measurements of the structure showed a sheet resistance of <inline-formula> <tex-math>$sim ~2000~Omega $ </tex-math></inline-formula>/sq and linear ohmic contact resistance of <inline-formula> <tex-math>$4.54~Omega cdot $ </tex-math></inline-formula> mm. A HFET with a gate length of <inline-formula> <tex-math>$sim ~200$ </tex-math></inline-formula> nm, source-drain spacing of <inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>m showed a peak transconductance of ~40 mS/mm and a high peak drain current of ~0.6 A/mm. A current gain cutoff frequency (f<inline-formula> <tex-math>$_{text {T}}text {)}$ </tex-math></inline-formula> of 15.7 GHz and a power gain cutoff frequency of 20.4 GHz was observed. The breakdown voltage of this device is 390 V, yielding a high Johnson’s figure of merit (JFOM) of 6.1 THz<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> V. This JFOM value is one of the highest reported JFOM values for AlxGa<inline-formula> <tex-math>$_{text {1-{x}}}$ </tex-math></inline-formula>N channel HFET (x >0.4) and also for other ultra-wide bandgap (UWBG) transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"545-548"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration 边缘照明配置下具有多峰响应的高性能钙钛矿光电探测器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541929

Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen

{"title":"High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration","authors":"Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen","doi":"10.1109/LED.2025.3541929","DOIUrl":"https://doi.org/10.1109/LED.2025.3541929","url":null,"abstract":"In this letter, the operational characteristics and performance of perovskite photodetectors were systematically studied under edge illumination, revealing significant performance enhancements in a CsFAPbI3 perovskite device compared to vertical illumination. At 0 V bias, responsivity improved from 8.3 A/W to 214 A/W, and detectivity increased from <inline-formula> <tex-math>$1.67 times ; 10^{{12}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$1.49 times ; 10^{{13}}$ </tex-math></inline-formula> Jones compared to vertical illumination. The lateral light penetration resulted in distinct and repeatable multi-peak response patterns over a frequency range of 0.2-5 kHz and light intensities of 0.68-6.56 mW/cm2. The dynamic response of the device was effectively modeled as a second-order system, demonstrating its potential for secure communication applications. This setup also enabled precise control over the photodetector’s size at small dimensions by simply adjusting the thickness, achieving an active area of just <inline-formula> <tex-math>$10^{-{5}}$ </tex-math></inline-formula> cm2 under edge illumination. This study underscores the promise of edge illumination for optimizing perovskite photodetectors and is currently under further investigation to broaden its applicability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"624-627"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrections to “Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition” 对“通过控制湿度条件和氧化镍成分提高钙钛矿太阳能电池效率的研究”的更正

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541608

Wenbin Han;Yanyu Deng;Wenwen Liu;Zhuowei Li;Chunyu Liu;Wenbin Guo

引用次数: 0

The New Method to Focus Multiple Sheet Electron Beam by Periodic Cusped Magnets With Multi-Zeros-Point Bias Magnetic Field 利用多零点偏置磁场的周期性尖头磁体聚焦多片电子束的新方法

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541232

Pengcheng Yin;Jinchi Cai;Jin Xu;Jian Zhang;Lingna Yue;Hairong Yin;Yong Xu;Guoqing Zhao;Wenxiang Wang;Yanyu Wei

{"title":"The New Method to Focus Multiple Sheet Electron Beam by Periodic Cusped Magnets With Multi-Zeros-Point Bias Magnetic Field","authors":"Pengcheng Yin;Jinchi Cai;Jin Xu;Jian Zhang;Lingna Yue;Hairong Yin;Yong Xu;Guoqing Zhao;Wenxiang Wang;Yanyu Wei","doi":"10.1109/LED.2025.3541232","DOIUrl":"https://doi.org/10.1109/LED.2025.3541232","url":null,"abstract":"The lack of a compact magnetic focusing system hurdles fulfilling the prominent potential of traveling wave tubes (TWTs) launched with multiple sheet electron beams (SEBs). To overcome this dilemma, this letter proposed an intriguing general method to confine multiple SEBs, which adopts novel horizontally extended periodic cusped magnets (PCM) with a multi-zero-point bias magnetic field. A new configuration with bespoke iron notches for multiple SEBs (Open PCM-NMSB) is employed to produce this unique field profile. To verify this concept, a G-band multi-SEB electron optical system (EOS) is presented, depicting that multiple paralleled SEBs can all stably propagate through the narrow tunnel without interceptions. Further investigation demonstrates that this new method can apply to EOS launched with an arbitrary number of SEBs with any preset clearance. In addition, the fabrication and measurement of this compact focusing structure are presented, experimentally confirming that the proposed Open PCM-NMSB can indeed generate the desired magnetic field, which surely facilitates the development of multi-SEB TWT or other similar vacuum electron devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"652-655"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators ScAlN-on-SiC Kᵤ-波段Sezawa固载二维模谐振器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541373

Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi

{"title":"ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators","authors":"Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi","doi":"10.1109/LED.2025.3541373","DOIUrl":"https://doi.org/10.1109/LED.2025.3541373","url":null,"abstract":"This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results demonstrate mechanical quality factors (<inline-formula> <tex-math>${Q}_{m}$ </tex-math></inline-formula>) as high as 380, Bode quality factors (<inline-formula> <tex-math>${Q}_{textit {Bode}}$ </tex-math></inline-formula>) approaching 500, electromechanical coupling coefficients (<inline-formula> <tex-math>${k}_{t}^{{2}}$ </tex-math></inline-formula>) of 4.5%, an overall Figure of Merit (<inline-formula> <tex-math>$textit {FOM} = {Q}_{m} cdot {k}_{t}^{{2}}$ </tex-math></inline-formula>) exceeding 17, and power handling greater than 20 dBm for devices closely matched to <inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula>. To the best of the authors’ knowledge, S2MRs exhibit the highest Key Performance Indicators (KPIs) among solidly mounted resonators in the Ku-band, paving the way for the integration of nanoacoustic devices on fast substrates with high-power electronics, tailored for military and harsh-environment applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"660-663"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of High Transconductance Gate-All-Around Transistors Using Negative Capacitance ‘Super High-K’ Gate Stack 采用负电容“超高k”栅极堆栈的高跨导栅极全能晶体管的演示

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541547

Jong Ho Park;Nirmaan Shanker;Suraj Cheema;Shang-Lin Hsu;Aditya Varma;Chia-Chun Lee;Chirag Garg;Urmita Siker;Li-Chen Wang;Chenming Hu;Sayeef Salahuddin

引用次数: 0

Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes 蓝宝石生长GaN膜制备的垂直GaN-on-钨高压pn二极管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-10 DOI: 10.1109/LED.2025.3540156

E. Brusaterra;E. Bahat Treidel;L. Deriks;S. Danylyuk;E. Brandl;J. Bravin;M. Pawlak;A. Külberg;M. Schiersch;A. Thies;O. Hilt

{"title":"Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes","authors":"E. Brusaterra;E. Bahat Treidel;L. Deriks;S. Danylyuk;E. Brandl;J. Bravin;M. Pawlak;A. Külberg;M. Schiersch;A. Thies;O. Hilt","doi":"10.1109/LED.2025.3540156","DOIUrl":"https://doi.org/10.1109/LED.2025.3540156","url":null,"abstract":"In this work, we demonstrate vertical GaN pn-diodes for high voltage applications initially grown and processed on 4” sapphire substrates and then transferred to 4” tungsten substrates to achieve a fully vertical conduction path. Laser lift-off was used to separate the GaN-membrane device structures from the initial sapphire substrate. The diodes show improved forward conduction after the transfer process with on-state resistance reduced from <inline-formula> <tex-math>$1.52~pm ~0.05$ </tex-math></inline-formula> m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 to <inline-formula> <tex-math>$1.15~pm ~0.05$ </tex-math></inline-formula> m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 and the blocking strength is not heavily compromised with its mean value reduced from <inline-formula> <tex-math>$1015~pm ~47$ </tex-math></inline-formula> V to <inline-formula> <tex-math>$988~pm ~57$ </tex-math></inline-formula> V. High device yields of the membrane transfer procedure underscores this cost-competitive vertical GaN device technology for high-power applications without the need of expensive GaN substrates.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"564-567"},"PeriodicalIF":4.1,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0