10-second Cu/Polymer Hybrid Bonding Using Area-Selective Metal Passivation for 3D Integration

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI:10.1109/LED.2025.3554768

Yu-Lun Liu;Tzu-Yu Chen;Kazuaki Ebisawa;Makiko Irie;Ya-Chien Chuang;Hsiao-Wei Yeh;Satoshi Fujimura;Kuan-Neng Chen

引用次数: 0

Abstract

This study presents the development of a Cu/polymer hybrid bonding process achieving 10 seconds of bonding duration at low temperatures (

$150~^{\circ }$

C to

$200~^{\circ }$

C). Key innovations include a polymer material enabling rapid bonding (<10> ${3}\times {10}^{-{9}}\Omega \cdot $ cm2, with higher bonding temperatures yielding more consistent electrical properties. Furthermore, Daisy chain measurement and cross-sectional SEM analysis confirmed bonding and signal integrity across varying contact nodes. This work highlights the potential of Cu/polymer hybrid bonding for high-throughput and high-performance applications, addressing key bonding reliability and manufacturing efficiency challenges.

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采用区域选择性金属钝化技术进行3D集成的10秒铜/聚合物杂化键合

本研究提出了一种Cu/聚合物杂化键合工艺，在低温（$150~^{\circ}$ C至$200~^{\circ}$ C）下实现了10秒的键合持续时间。关键的创新包括一种聚合物材料，可以实现快速键合（${3}\times {10}^{-{9}}\Omega \cdot $ cm2），具有更高的键合温度，产生更一致的电性能。此外，菊花链测量和横断面扫描电镜分析证实了不同接触节点之间的键合和信号完整性。这项工作突出了铜/聚合物混合键合在高通量和高性能应用中的潜力，解决了键合可靠性和制造效率的关键挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.