IEEE Electron Device Letters最新文献

{"title":"Changes to the Editorial Board","authors":"Kelin J. Kuhn","doi":"10.1109/LED.2026.3707328","DOIUrl":"https://doi.org/10.1109/LED.2026.3707328","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1498-1498"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11627132","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3-D Cross-Point Memory","authors":"Wenjuan Zhou;Ruizhan Yan;Renhao Xue;Mansun Chan;Xiwen Liu","doi":"10.1109/LED.2026.3704279","DOIUrl":"https://doi.org/10.1109/LED.2026.3704279","url":null,"abstract":"3D cross-point (XPoint) memory is attractive for high-density integration because it retains compact two-terminal cells and bit-level accessibility during vertical scaling. However, further layer scaling of 3D XPoint architectures remains constrained by two coupled challenges: sneak-path leakage and uniform multilayer process integration. Here, we experimentally demonstrate a monolithic five-layer sequential XPoint-compatible integration route co-enabled by hafnia-based ferroelectric diodes (FeDs) and an all-ALD ultrathin stack. In this route, the intrinsic nonlinearity of FeDs suppresses half-select leakage without an external selector, while the ~10 nm-per-tier all-ALD device stack supports repeated monolithic multilayer integration through conformal growth and precise thickness control. Across all layers, the devices exhibit consistent polarization-modulated I–V hysteresis, with a high ON/OFF ratio of <inline-formula> <tex-math>$sim 10^{{3}}$ </tex-math></inline-formula>, intrinsic nonlinearity up to ~600, programming down to 50 ns, and endurance beyond <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> write/erase cycles. These results establish a selector-free integration route based on FeDs and all-ALD ultrathin stacks for sequential monolithic 3D XPoint memory.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1663-1666"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11570095","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain-Induced Mobility Enhancement in Crystalline In2O3 FETs","authors":"Huangbai Liu;Yan Le;Wei Shi;Xinming Li;Gan Liu;Dong Zhang;Rui Shao;Chen Sun;Xiao Gong","doi":"10.1109/LED.2026.3699513","DOIUrl":"https://doi.org/10.1109/LED.2026.3699513","url":null,"abstract":"In this work, we demonstrate a flexible-substrate-based strategy for applying uniaxial tensile strain to indium oxide field-effect transistors (In₂O₃ FETs) and verify that strain can effectively enhance the mobility of crystalline In₂O₃ FETs. Amorphous In₂O₃ FETs fabricated by atomic layer deposition (ALD) have a mobility as high as 90 cm<inline-formula> <tex-math>${}^{{2}}cdot $ </tex-math></inline-formula>V<inline-formula> <tex-math>${}^{-{1}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula> and remain stable under bending conditions. Post-deposition annealing (PDA) promotes the crystallization of In₂O₃, increasing the average mobility of the In₂O₃ FETs to 125 cm<inline-formula> <tex-math>${}^{{2}}cdot $ </tex-math></inline-formula>V<inline-formula> <tex-math>${}^{-{1}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>. Upon applying uniaxial tensile strain, the average mobility of the crystalline devices significantly increases by 16%, from 125 to 145 cm<inline-formula> <tex-math>${}^{{2}}cdot $ </tex-math></inline-formula>V<inline-formula> <tex-math>${}^{-{1}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>. Under uniaxial tensile strain, the positive bias stress (PBS) and negative bias stress (NBS) characteristics of the crystalline In₂O₃ FETs remain nearly unchanged, indicating that the applied strain does not noticeably deteriorate device reliability. It should also be noted that the crystalline In₂O₃ FETs exhibit depletion-mode characteristics, suggesting that further threshold voltage (<inline-formula> <tex-math>${V}_{text {TH}}text {)}$ </tex-math></inline-formula> optimization would be beneficial for future applications. Our investigation introduces strain-induced mobility enhancement into oxide semiconductors (OS) FETs, providing a practical approach to further improving the performance of OS FETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1603-1606"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power Gain-Stable AlN/GaN MIS-HEMTs With Pulsed N2 Plasma-Treated In-Situ SiNx Gate Dielectric","authors":"Qingyi Zhang;Ke Wei;Jianchao Wang;Sheng Zhang;Kaiyu Wang;Jiaqi Guo;Xiaoqiang He;Zhuanli Ma;Junjie Feng;Shibo Fan;Xinguo Gao;Yankui Li;Sen Huang;Xinhua Wang;Xinyu Liu","doi":"10.1109/LED.2026.3703504","DOIUrl":"https://doi.org/10.1109/LED.2026.3703504","url":null,"abstract":"In this letter, power gain-stable AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with pulsed N₂ plasma treated in-situ SiN_x gate dielectric were fabricated. XPS analysis and device electric field simulations indicated that a nonuniform distribution of the Si/N ratio was achieved in the vertical direction of the ultrathin dielectric after treatment, thereby reducing the peak electric field underneath the gate foot. At 3.5 GHz, the fabricated MIS-HEMT exhibits high efficiency and bias-stable linear power gain over <inline-formula> <tex-math>${V}_{text {DS}}=6$ </tex-math></inline-formula>-25 V under continuous-wave operation. Due to N₂ plasma induced modulation of the channel electric field, the linear power gain variation remains ±0.6 dB. These findings provide a viable process route for gain stabilization of GaN RF devices under changing supply voltage operations.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1539-1542"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer","authors":"Jongseon Seo;Geonhui Han;Laeyong Jung;Junghoon Park;Jongho Park;Suhwan Lim;Wanki Kim;Daewon Ha;Hyunsang Hwang","doi":"10.1109/LED.2026.3702162","DOIUrl":"https://doi.org/10.1109/LED.2026.3702162","url":null,"abstract":"We propose an ionic field-effect transistor (Ionic FET) based on a WO<inline-formula> <tex-math>${}_{text{3-}x}$ </tex-math></inline-formula>/HfOx ECRAM stack that stores information via ionic-charge-induced threshold voltage (V<inline-formula> <tex-math>${}_{text {th}}text {)}$ </tex-math></inline-formula> modulation, enabling scalable analog state control. To relax the trade-off between ion injection and retention, an ultrathin ion barrier layer formed by ozone oxidation suppresses ion back-diffusion while preserving sufficient injection. The device achieves a large memory window of ~7.6 V with linear Vth modulation, stable 3-bit multi-level operation (<inline-formula> <tex-math>$sigma $ </tex-math></inline-formula>/<inline-formula> <tex-math>$mu lt 0.1$ </tex-math></inline-formula>), and endurance over <inline-formula> <tex-math>$10^{{5}}$ </tex-math></inline-formula> program/erase cycles. By raising the activation energy for ion back-diffusion, the ozone-treated barrier yields a projected room-temperature retention exceeding <inline-formula> <tex-math>$10^{{6}}$ </tex-math></inline-formula> sec.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1579-1582"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Mechanism-Informed Predictive Model for Mean and Sigma of 3D nand Threshold-Voltage Distributions at Extreme Temperatures","authors":"Yicheng Ke;Minghui Dong;Linlin Cai;Wangyong Chen","doi":"10.1109/LED.2026.3704253","DOIUrl":"https://doi.org/10.1109/LED.2026.3704253","url":null,"abstract":"Emerging aerospace and other mission-critical applications require charge-trap 3D <sc>nand</small> flash to operate reliably over wide and extreme temperature ranges, where the cross-temperature evolution of threshold-voltage (V_TH) distributions is strongly nonlinear and trajectory-dependent. In this work, we propose a mechanism-informed compact model that jointly predicts the mean and sigma of 3D <sc>nand</small> V_TH distributions by decomposing trap, barrier, and mobility contributions. The model is validated across programmed states under high-temperature program/low-temperature read and low-temperature program/high-temperature read trajectories over −55 °C to 125 °C. It achieves accurate full-window fitting for both descriptors, while restricted-window fitting and held-out-region prediction demonstrate robust extrapolation into extreme-temperature regimes. Ablation analysis shows that the barrier term contributes most to prediction accuracy, followed by the trap term, while the mobility term provides a smaller but visible contribution. Compared with empirical baselines, the proposed model reduces the average prediction RMSE by 66.9% in extreme-temperature and nonlinear regions, providing a compact framework for distribution-level prediction and read-threshold optimization in 3D <sc>nand</small>.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1567-1570"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148748959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Changes to the Editorial Board","authors":"Kelin J. Kuhn","doi":"10.1109/LED.2026.3707331","DOIUrl":"https://doi.org/10.1109/LED.2026.3707331","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1501-1501"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11626930","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrections to “Suppressing Interface Traps Density of Top-Gate MoS2 Transistor via H2O Presoak for HfO2”","authors":"Kaiyue He;Zhanqi Li;Yijing Yang;Yifu Sun;Lingyu Zhang;Ruhai Liu;Maguang Zhu","doi":"10.1109/LED.2026.3706248","DOIUrl":"https://doi.org/10.1109/LED.2026.3706248","url":null,"abstract":"Presents corrections to the paper, (“Suppressing Interface Traps Density of Top-Gate MoS₂ Transistor via H₂O Presoak for HfO₂”).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1679-1679"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11627126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Changes to the Editorial Board","authors":"Kelin J. Kuhn","doi":"10.1109/LED.2026.3707330","DOIUrl":"https://doi.org/10.1109/LED.2026.3707330","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1500-1500"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11627134","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2026.3709239","DOIUrl":"https://doi.org/10.1109/LED.2026.3709239","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1686-C3"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11627131","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}