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Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588288
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引用次数: 0
Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 用于射频、功率和光电子应用的超宽带隙半导体器件
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588290
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引用次数: 0
IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588292
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引用次数: 0
IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588286
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引用次数: 0
IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588280
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引用次数: 0
EDS Meetings Calendar EDS会议日程表
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588284
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引用次数: 0
Reliability of Advanced Nodes 高级节点可靠性
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588276
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引用次数: 0
Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577888
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引用次数: 0
IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577880
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引用次数: 0
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577890
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引用次数: 0
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