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IEEE Electron Device Letters最新文献

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Corrections to “Write Asymmetry of Spin-Orbit Torque Memory Induced by In-Plane Magnetic Fields” “面内磁场诱导自旋-轨道转矩记忆写入不对称性”的修正
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3585313
Baiqing Jiang;Dongyang Wu;Qianwen Zhao;Kaihua Lou;Yuelei Zhao;Yan Zhou;C. Tian;Chong Bi
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes 《IEEE电子设备学报：高级节点的可靠性》特刊征文
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597117
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Wide Band Gap Semiconductors for Automotive Applications 《电子器件：汽车用宽带隙半导体》特刊征文
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597115
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 《IEEE电子器件学报：用于射频、功率和光电子应用的超宽带隙半导体器件》特刊征文
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597119
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引用次数: 0
EDS Meetings Calendar EDS会议日程表
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597111
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引用次数: 0
IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597107
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引用次数: 0
IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597122
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引用次数: 0
IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息
IF 4.5 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597113
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引用次数: 0
Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588288
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引用次数: 0
Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 用于射频、功率和光电子应用的超宽带隙半导体器件
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588290
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引用次数: 0
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