IEEE Electron Device Letters最新文献_第2页

IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3561991

引用次数: 0

Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Relatively Short Channel Lengths 紫外光对非晶铟镓锌氧化物薄膜晶体管的诱导效应

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI: 10.1109/LED.2025.3553940

Po-Hsun Chen;Kuan-Ju Zhou;Cheng-Hsien Lin

{"title":"Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Relatively Short Channel Lengths","authors":"Po-Hsun Chen;Kuan-Ju Zhou;Cheng-Hsien Lin","doi":"10.1109/LED.2025.3553940","DOIUrl":"https://doi.org/10.1109/LED.2025.3553940","url":null,"abstract":"This study reports the ultraviolet (UV) light induced effects on the thin film transistor (TFT) based on the amorphous indium-gallium-tin-oxide (IGZO) material with the double gate structure. Under UV light exposure, the n-type TFT device with the relatively short channel (<inline-formula> <tex-math>$4mu $ </tex-math></inline-formula>m) can exhibit good response, compared to those with the relatively long channel according to the electrical measurements. In addition, continuous sweeping cycles up to 1000 cycles with and without UV light source suggest its robust endurance characteristics without obvious degradations. Then, constant dynamic light switching cycles up to 2000 cycles are tested and also verified with different light sources. To further examine the UV induced effects, various electrical operations and light intensities are carried out. The experimental results indicate that the device with a relatively short channel exhibits excellent UV light responsiveness and high reliability when exposed to a selective light source, demonstrating its potential for UV sensor or light-switching applications compared to conventional UV sensing devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"777-780"},"PeriodicalIF":4.1,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neuromorphic Device Based on Solution-Processed WSe2 Nanoflake Synaptic Transistors 基于溶液处理的WSe2纳米片突触晶体管的神经形态器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-28 DOI: 10.1109/LED.2025.3554009

Taoyu Zou;Chengpeng Jiang;Wentao Xu;Yong-Young Noh

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EDS Meetings Calendar EDS会议日程表

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551191

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IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551193

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Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551221

引用次数: 0

Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551217

引用次数: 0

Accurate Bias Stress Instability Measurements in High-Performance ITO FETs Using Modified On-the-Fly Technique 利用改进的动态技术精确测量高性能ITO场效应管中的偏置应力不稳定性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3554214

Md Sazzadur Rahman;Arijit Sarkar;Dinuk R. De Silva;Austin T. Harrison;Yu-Hsin Kuo;Jiazheng Chen;Asif Islam Khan;Tania Roy

{"title":"Accurate Bias Stress Instability Measurements in High-Performance ITO FETs Using Modified On-the-Fly Technique","authors":"Md Sazzadur Rahman;Arijit Sarkar;Dinuk R. De Silva;Austin T. Harrison;Yu-Hsin Kuo;Jiazheng Chen;Asif Islam Khan;Tania Roy","doi":"10.1109/LED.2025.3554214","DOIUrl":"https://doi.org/10.1109/LED.2025.3554214","url":null,"abstract":"We report on Indium Tin Oxide (ITO) dual-gated field-effect transistors (DG-FETs) achieving a high ION of 1.2 mA/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m at a gate overdrive, VOV of 2.5 V, with a top-gate effective oxide thickness of 0.85 nm. When stressed with VOV = 3.5 V, the devices exhibit ultralow threshold voltage shift (<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>Vth) of just 19 mV, as measured by the conventional measure-stress-measure (MSM) technique commonly used in the amorphous oxide semiconductor (AOS) community. However, employing a modified on-the-fly (OTF) method for reliability testing reveals a 500% increase in <inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>Vth for the same ITO device, due to the Vth recovery occurring within milliseconds after stress is removed. This substantial difference, also observed in multiple devices, highlights the possible underreporting of threshold shifts in the MSM method due to fast Vth recovery. Thus, our results underscore the importance of recovery-analysis for reliability study of AOS devices and choosing OTF method for devices with fast recovery. Our study establishes a robust framework for measuring and understanding the root causes of Vth instabilities in ITO transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"864-867"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications 探索令人兴奋的多功能氧化物基电子器件世界：从材料到系统级应用

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551219

引用次数: 0

IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551187

引用次数: 0