IEEE Electron Device Letters最新文献_第2页

Halogen Substitution in Lead-Free Double Perovskites Toward Ultralow-Dose X-Ray Detection and Signal Decoding 无铅双钙钛矿中卤素取代对超低剂量x射线探测和信号解码的影响

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-25 DOI: 10.1109/LED.2026.3705883

Lixia Wang;Yamin Chang;Yiran Liu;Xu Wang;Shiwei Zhang;Jiayi Sun;Junfang Wang;Ziquan Yuan;Yongle Pan;Hao Wang;Wenjuan Wei;Xiangyue Meng

{"title":"Halogen Substitution in Lead-Free Double Perovskites Toward Ultralow-Dose X-Ray Detection and Signal Decoding","authors":"Lixia Wang;Yamin Chang;Yiran Liu;Xu Wang;Shiwei Zhang;Jiayi Sun;Junfang Wang;Ziquan Yuan;Yongle Pan;Hao Wang;Wenjuan Wei;Xiangyue Meng","doi":"10.1109/LED.2026.3705883","DOIUrl":"https://doi.org/10.1109/LED.2026.3705883","url":null,"abstract":"X-ray communication (XCOM) presents a promising alternative for wireless communication in strongly shielded environments, but its practical implementation is impeded by the absence of sensitive, low-noise X-ray detectors for low-dose conditions. Here, we address this challenge through a molecular-level crystal engineering strategy, designing a novel two-dimensional double perovskite, (I-PA)4AgBiI8, by substituting the terminal group of the A-site organic cation with a halogen atom. This halogen-substitution strategy stabilizes the perovskite structure against competing low-dimensional phases, leading to a high dielectric constant (<inline-formula> <tex-math>$varepsilon _{text {r}} =38.1$ </tex-math></inline-formula>), an ultralow exciton binding energy (<inline-formula> <tex-math>${E}_{text {b}} =50.4$ </tex-math></inline-formula> meV), and a dense crystal (3.452 g cm<inline-formula> <tex-math>${}^{-{3}}text {)}$ </tex-math></inline-formula>. These intrinsic properties enable the X-ray detector to achieve outstanding sensitivity (<inline-formula> <tex-math>$1.79times 10^{{4}},, mu $ </tex-math></inline-formula>C Gy<inline-formula> <tex-math>${}_{text {air}}^{-{1}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-{2}}text {)}$ </tex-math></inline-formula> and a record-low detection limit (0.012 nGyair s<inline-formula> <tex-math>${}^{-{1}}text {)}$ </tex-math></inline-formula>. The device also exhibits excellent operational stability, evidenced by a large ion migration activation energy (735 meV). Finally, proof-of-concept low-dose X-ray signal decoding is demonstrated using Morse code and pixel-pattern transmission through an 18.8 mm aluminum shield at an ultralow dose rate of 157 nGy s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1611-1614"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

EDS Calendar Meetings EDS会议日程表

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-28 DOI: 10.1109/LED.2026.3709235

引用次数: 0

Mid-Wave Infrared InAsSb Barrier Detectors Monolithically Grown on Silicon 单片生长的中波红外InAsSb势垒探测器

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-02 DOI: 10.1109/LED.2026.3707297

Keming Cheng;Dong Han;Weifan Ji;Kuangwu Yan;Chuang Li;Kai Shen;Ting Wang;Jianjun Zhang;Jiang Wu

{"title":"Mid-Wave Infrared InAsSb Barrier Detectors Monolithically Grown on Silicon","authors":"Keming Cheng;Dong Han;Weifan Ji;Kuangwu Yan;Chuang Li;Kai Shen;Ting Wang;Jianjun Zhang;Jiang Wu","doi":"10.1109/LED.2026.3707297","DOIUrl":"https://doi.org/10.1109/LED.2026.3707297","url":null,"abstract":"Monolithic silicon integration provides a promising pathway toward low-cost, large-format infrared photodetectors despite substantial lattice mismatch. Here, mid-wave infrared InAsSb barrier detectors were monolithically grown on silicon via molecular beam epitaxy. To mitigate the effects of a high threading dislocation density caused by the 11% lattice mismatch, a unipolar barrier was employed to suppress defect-induced generation-recombination (G-R) current, thereby maintaining reliable device performance. Electrical measurements showed low dark current densities of <inline-formula> <tex-math>${1}.{40}times {10} ^{-{7}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${1}.{75}times {10} ^{-{2}}$ </tex-math></inline-formula> A/cm2 at 77 and 300 K, respectively, under a bias of −0.2 V. Furthermore, the devices achieved a peak responsivity of 0.75 A/W and a quantum efficiency (QE) of 26.6% at <inline-formula> <tex-math>$3.5~mu $ </tex-math></inline-formula>m. These metrics validate the effectiveness of the barrier architecture in neutralizing the deleterious impact of threading dislocations, confirming that band engineering provides superior defect tolerance for antimonide-based infrared sensing on CMOS-compatible platforms.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1543-1546"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Uniformity Wafer-Level Porous TiO2–WO3 Heterojunction Sensor Chips for Highly-Sensitive Ethanol Detection 用于高灵敏度乙醇检测的高均匀性晶片级多孔TiO2-WO3异质结传感器芯片

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-25 DOI: 10.1109/LED.2026.3705079

Tianliang Meng;Jiyong Zhou;Mingquan Zhang;Xiaoting Tan;Haojiang Wen;Hui Li;Jianyou Dai;Chi Zhang;Lei Shan;Sixing Xu

{"title":"High-Uniformity Wafer-Level Porous TiO2–WO3 Heterojunction Sensor Chips for Highly-Sensitive Ethanol Detection","authors":"Tianliang Meng;Jiyong Zhou;Mingquan Zhang;Xiaoting Tan;Haojiang Wen;Hui Li;Jianyou Dai;Chi Zhang;Lei Shan;Sixing Xu","doi":"10.1109/LED.2026.3705079","DOIUrl":"https://doi.org/10.1109/LED.2026.3705079","url":null,"abstract":"Chip-scale gas sensors based on metal oxide semiconductors (MOS) have attracted extensive research interests; however, the poor sensitivity and selectivity of single-type MOS materials have greatly limited their practical applications. Recently, MOS heterojunctions with porous structures have emerged as an effective strategy, attributed to their high specific surface area and tailored band structures. Nevertheless, the synthesis of such structures usually relies on chemical methods incompatible with semiconductor manufacturing processes and remains challenging to fabricate directly on wafers. Herein, we report a facile strategy for preparing porous TiO2-WO3 heterojunction thin films at the wafer level, which is applicable to the batch fabrication of ultrasensitive ethanol gas sensor chips. Specifically, TiO2 and WO3 are co-sputtered onto a wafer, followed by room-temperature HCl wet-etching to reconstruct the porous structure and subsequent annealing. The fabricated sensor chip exhibits an excellent response (5.83 @ 10 ppm) and high selectivity toward ethanol vapor under UV irradiation, accompanied by outstanding repeatability and response uniformity. Meanwhile, the proposed strategy demonstrates excellent inter-device consistency across the wafer: the relative standard deviation (RSD) of the sensing response is as low as 3.08%. Coupled with the low fabrication cost, this work provides a promising route for the large-scale production of high-performance miniaturized gas sensors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1631-1634"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Scaling Theory for the Nonlinear Subthreshold Behavior of Cryogenic Ultrathin Body MOSFETs 低温超薄体mosfet非线性亚阈值行为的标度理论

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-09 DOI: 10.1109/LED.2026.3701783

In Huh;Mir Md Fahimul Islam;Changwook Jeong;Muhammad A. Alam

{"title":"A Scaling Theory for the Nonlinear Subthreshold Behavior of Cryogenic Ultrathin Body MOSFETs","authors":"In Huh;Mir Md Fahimul Islam;Changwook Jeong;Muhammad A. Alam","doi":"10.1109/LED.2026.3701783","DOIUrl":"https://doi.org/10.1109/LED.2026.3701783","url":null,"abstract":"The subthreshold swing (SS) is expected to scale linearly with temperature, <inline-formula> <tex-math>$text {SS}_{text {B}} = text {(}text {k}_{text {B}}text {T}/text {q}text {)}ln {10}$ </tex-math></inline-formula>, yet experimental data from cryogenic UTB (Si, MoS2, and In2 O3) MOSFETs exhibit anomalous temperature-dependent nonlinearities characterized by negative differential SS and multiple plateaus. Here we use the Landauer formulation to rigorously derive the scaling relationship <inline-formula> <tex-math>$text {SS} = text {SS}_{text {B}}cdot [{1}+gamma text {(}text {T}_{text {R}}/text {T}text {)}^{text {T}/text {T}_{text {W}}}]$ </tex-math></inline-formula> for constant diffusivity to capture the universality and robustness of SS anomalies reported in the literature. The temperature scales (<inline-formula> <tex-math>$text {T}_{text {W}}, text {T}_{text {R}}$ </tex-math></inline-formula>) are respectively related to the intrinsic properties of the band-tail states and reference current, and as such, can be used as a diagnostic quality monitor of as-fabricated and stress-degraded MOSFET.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1671-1674"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling of Polarization Dynamics in HfO2-Based Ferroelectrics by Reduced L-K Model 基于还原L-K模型的hfo2基铁电体极化动力学建模

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-08 DOI: 10.1109/LED.2026.3697987

Bing Chen;Haoran Yu;Wenhao Liu;Shuyu Zhang;Jiayi Zhao;Jifang Cao;Xuecheng Cui;Jiuren Zhou;Xiao Yu;Ran Cheng;Yan Liu;Genquan Han

引用次数: 0

MoS2:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing 用于神经形态计算的基于pva的柔性光电可重构忆阻器

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-03 DOI: 10.1109/LED.2026.3699740

Harsh Ranjan;Parthasarathi Pal;Vivek Pratap Singh;Gulshan Kumar;Sanjay Kumar;Saurabh Kumar Pandey

{"title":"MoS2:PVA-Based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing","authors":"Harsh Ranjan;Parthasarathi Pal;Vivek Pratap Singh;Gulshan Kumar;Sanjay Kumar;Saurabh Kumar Pandey","doi":"10.1109/LED.2026.3699740","DOIUrl":"https://doi.org/10.1109/LED.2026.3699740","url":null,"abstract":"This letter presents a flexible Ag/MoS2: PVA/SiO2/Pt memristor featuring controllable transition between volatile self-rectifying threshold switching (SRTS) and non-volatile bipolar resistive switching dependent on compliance current (CC) and operating voltage. The device exhibits a high rectification ratio (<inline-formula> <tex-math>$sim {10}^{{3}}$ </tex-math></inline-formula>) and ultrafast relaxation (~170 ns) time in SRTS mode, functioning as an effective selector. In non-volatile mode, it exhibits stable multi-level storage and persistence photoconductivity (PPC) under a red light source, enabling optoelectronic synaptic emulation. Integrated NeurosimV 3.0 hardware simulation reveals weight updates (<inline-formula> <tex-math>$textit {NL}_{{P}/{D}} approx {4}.{21}/-{4}.{86}$ </tex-math></inline-formula>) functionality and achieves 85% MNIST handwritten dataset classification accuracy. These results provide a robust, single-layer optoelectronic memristive hardware platform for integrated sensing, cell selection, and neuromorphic computing in flexible electronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1583-1586"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of Interlayer and Interfacial Traps in Endurance Degradation of FeFETs 层间陷阱和界面陷阱在效应场效应管持久退化中的作用

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-22 DOI: 10.1109/LED.2026.3706090

Zuowei Zhang;Yuanquan Huang;Junshuai Chai;Xiaolei Wang;Zhicheng Wu;Tiancheng Gong;Qing Luo

{"title":"Role of Interlayer and Interfacial Traps in Endurance Degradation of FeFETs","authors":"Zuowei Zhang;Yuanquan Huang;Junshuai Chai;Xiaolei Wang;Zhicheng Wu;Tiancheng Gong;Qing Luo","doi":"10.1109/LED.2026.3706090","DOIUrl":"https://doi.org/10.1109/LED.2026.3706090","url":null,"abstract":"In this work, the impact of interlayer and interface defects on the endurance of ferroelectric field-effect transistors (FeFET) is quantified. First, the sub-millisecond “Multi-Spots” characterization is used to capture the fast trap during cycling test across the wide temperature range (4-300K), which are typically masked under conventional defect probing methods. A quantum mechanically (QM) solved nonradiative multi-phonon (NMP) model is adopted, enabling consistent extraction of the trap band across different temperatures and cycling conditions. We reveal the crucial role of interface defects (Si-Int) on the FeFET endurance at cryogenic temperature, whereas the generation of interlayer defect (IL, <italic>cf. SiO2) dominates at 150 and 300K. The observed endurance degradation can be reproduced by increasing the densities of the extracted Si-Int and IL trap, and understood as an enhanced propagation of the degradation from the channel interface into the SiO2 interlayer with increasing temperature. Cryogenic conditions (4K) effectively “freeze” this progression, confining the degradation to the interface. By accurately modelling the interface and the IL bulk degradation, this work provides a physical basis for understanding and engineering the FeFET reliability across a wide temperature range.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1555-1558"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11574645","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Changes to the Editorial Board 编辑委员会的变动

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-07-28 DOI: 10.1109/LED.2026.3707327

Kelin J. Kuhn

引用次数: 0

Modulating Oxygen Vacancy Concentration for High-Performance Undoped HfO2 Ferroelectric Capacitors 高性能未掺杂HfO2铁电电容器的氧空位浓度调制

IF 4.6 2区工程技术

IEEE Electron Device Letters Pub Date : 2026-08-01 Epub Date: 2026-06-15 DOI: 10.1109/LED.2026.3702735

Xuanxi Liu;Yang Yang;Guanlin Li;Zhiquan He;Xiuyi Wang;Boping Wang;Shibo Wang;Xiangli Zhou;Pengfei Jiang;Tiancheng Gong;Wei Wei;Xiao Long;Yuan Wang;Qing Luo

{"title":"Modulating Oxygen Vacancy Concentration for High-Performance Undoped HfO2 Ferroelectric Capacitors","authors":"Xuanxi Liu;Yang Yang;Guanlin Li;Zhiquan He;Xiuyi Wang;Boping Wang;Shibo Wang;Xiangli Zhou;Pengfei Jiang;Tiancheng Gong;Wei Wei;Xiao Long;Yuan Wang;Qing Luo","doi":"10.1109/LED.2026.3702735","DOIUrl":"https://doi.org/10.1109/LED.2026.3702735","url":null,"abstract":"Ferroelectric HfO2 thin film has attracted considerable attention due to its ability to induce ferroelectricity without doping. However, its performance is still far inferior to that of doped HfO2-based ferroelectric films, which limits its further development. In this study, the ferroelectric performance of TiN/HfO2/TiN devices was significantly enhanced by modulating the oxygen vacancy concentration in undoped HfO2 films. TEM and EELS analysis demonstrate that the increase in oxygen vacancy concentration within the undoped HfO2 film promotes the crystallization of the ferroelectric o-phase, accompanied by an increase in dielectric constant, leading to a substantial enhancement in device performance. Ultimately, the TiN/HfO2/TiN ferroelectric capacitor achieved a high remanent polarization (2P<inline-formula> <tex-math>${}_{text {r}} sim ~40~mu $ </tex-math></inline-formula>C/cm<inline-formula> <tex-math>${}^{{2}}text {)}$ </tex-math></inline-formula>. Under an electric field of 2.5 MV/cm, the device sustained over <inline-formula> <tex-math>$4times 10^{{9}}$ </tex-math></inline-formula> switching cycles before hard breakdown.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 8","pages":"1571-1574"},"PeriodicalIF":4.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148627677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0