IEEE Electron Device Letters最新文献_第2页

IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597107

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IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597122

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IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-29 DOI: 10.1109/LED.2025.3597113

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Enhancement of Low-Temperature Al-Al Bonding for Cost-Effective 3D Integration 增强低温Al-Al键合的成本效益3D集成

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-22 DOI: 10.1109/LED.2025.3601663

Yixiong Wu;Xiangwei Wu;Zeming Tao;Yunhui Du;Ningning Xu;Weiyi Lin;Rongbin Xu;Dongxue Liang;Yi Zhong;Daquan Yu

{"title":"Enhancement of Low-Temperature Al-Al Bonding for Cost-Effective 3D Integration","authors":"Yixiong Wu;Xiangwei Wu;Zeming Tao;Yunhui Du;Ningning Xu;Weiyi Lin;Rongbin Xu;Dongxue Liang;Yi Zhong;Daquan Yu","doi":"10.1109/LED.2025.3601663","DOIUrl":"https://doi.org/10.1109/LED.2025.3601663","url":null,"abstract":"Al-Al bonding is considered as a promising alternative for direct metal bonding applications providing low-cost fine-pitch interconnections with minimum additional process effort and complexity. Conventional Al-Al thermocompression bonding requires high temperature (<inline-formula> <tex-math>$gt 300~^{circ }$ </tex-math></inline-formula>C) and elevated pressure to overcome surface oxide layers, which limits its process compatibility and potential applications in advanced packaging. This work proposes a low-temperature Al-Al bonding method utilizing an Au passivation layer, achieving highly reliable interconnections at <inline-formula> <tex-math>$160sim 250~^{circ }$ </tex-math></inline-formula>C with 2 MPa bonding force. The Ti/Au metallic stack passivation effectively suppresses Al surface oxidation. During bonding process, Al atoms diffuse through Ti grain boundaries to the bonding interface, forming a high-strength joint with low porosity. Mechanical tests demonstrate an average shear strength of 40.85 MPa at the bonded interface. Electrical characterization reveals a contact resistivity of <inline-formula> <tex-math>$0.93sim 2.0times 10^{-7} ~Omega cdot $ </tex-math></inline-formula>cm2, comparable to conventional high-temperature Al-Al bonding. Further microscopic analysis elucidates the mechanisms of Al-Au interdiffusion and interfacial intermetallic compound formation during bonding. This technique offers a low-temperature and cost-effective solution for 3D integration.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1909-1912"},"PeriodicalIF":4.5,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Demonstration of a Scalable Magnetron Array Through Extracavity Coupling 通过外腔耦合的可扩展磁控管阵列的演示

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-22 DOI: 10.1109/LED.2025.3601902

Wenlong Li;Hailong Li;Wanshan Hou;Hui Wang;Yu Qin;Haixia Liu;Licun Wang;Bo Li;Changnian Li;Maoyan Wang;Liangjie Bi;Bin Wang;Yong Yin;Lin Meng

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HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices 高密度三维集成器件中HfO₂-SiO₂杂化键合技术的应用

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-21 DOI: 10.1109/LED.2025.3601394

Jinzhu Li;Yanming Liu;Ziyu Liu;He Tian;Yabin Sun;David Wei Zhang

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Investigation of a Low-Loss Broadband Pill-Box Window Operation Over 1THz 1THz低损耗宽带药盒窗口操作的研究

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-20 DOI: 10.1109/LED.2025.3598843

Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong

{"title":"Investigation of a Low-Loss Broadband Pill-Box Window Operation Over 1THz","authors":"Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong","doi":"10.1109/LED.2025.3598843","DOIUrl":"https://doi.org/10.1109/LED.2025.3598843","url":null,"abstract":"A low-loss broadband pill-box window for Terahertz (THz) Vacuum Electron Devices (VEDs) is proposed in this letter. To enlarge the THz vacuum window geometric size benefiting the fabrication process, a novel strong coupling over-mode operation has been proposed and employed without introducing extra oscillation points over a broad operation band. At the same time, the monocrystalline diamond (MD) layer is used to withstand stresses during the brazing process as well as the atmospheric pressure. The window frames use an Oxygen Free Copper (OFC) - Kovar heterogeneous integrated structure, ensuring both vacuum tightness and low-loss transmission. The fabricated device demonstrated exceptional vacuum tightness, with a measured leak rate of <inline-formula> <tex-math>${6}.{95}times {10}^{text {-10}}$ </tex-math></inline-formula> Pa<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>m3/s. The cold test result of the sealed THz MD window demonstrates a recorded low insertion loss (−3.67 dB) at 1 THz, and a 70 GHz bandwidth (0.960 THz – 1.030 THz). The cold test measurements closely match simulation predictions, validating the effectiveness of the strong coupling design in suppressing oscillatory points and the heterogeneous integrated structure in reducing the transmission loss.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1861-1864"},"PeriodicalIF":4.5,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Enhancement of Energy Storage and Efficiency in Antiferroelectric Hf᙮Zr᙮₋₁O₂ Supercapacitors Through Tailored Phase Engineering by Oxygen Vacancy 氧空位定制相位工程提高反铁电Hf᙮Zr᙮₁O₂超级电容器的储能和效率

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-18 DOI: 10.1109/LED.2025.3599694

Zhiquan He;Yu Bai;Guanlin Li;Xuanxi Liu;Xiuyi Wang;Chuhao Yao;Pengfei Jiang;Tiancheng Gong;Wei Wei;Xiao Long;Xinzhong Zhu;Yuan Qiu;Heng Ye;Yuan Wang;Qing Luo

{"title":"Enhancement of Energy Storage and Efficiency in Antiferroelectric Hf᙮Zr᙮₋₁O₂ Supercapacitors Through Tailored Phase Engineering by Oxygen Vacancy","authors":"Zhiquan He;Yu Bai;Guanlin Li;Xuanxi Liu;Xiuyi Wang;Chuhao Yao;Pengfei Jiang;Tiancheng Gong;Wei Wei;Xiao Long;Xinzhong Zhu;Yuan Qiu;Heng Ye;Yuan Wang;Qing Luo","doi":"10.1109/LED.2025.3599694","DOIUrl":"https://doi.org/10.1109/LED.2025.3599694","url":null,"abstract":"In this letter, the antiferroelectric (AFE) performance of <inline-formula> <tex-math>${mathrm {Hf}}_{mathbf {x}}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {Zr}}_{mathbf {{1}-}mathbf {x}}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> (HZO) film is significantly improved by regulating its oxygen vacancy (V<inline-formula> <tex-math>${}_{!!mathbf {O}}$ </tex-math></inline-formula>). The gas with different <inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> flow is used in the HZO films sputter process. Introducing appropriate <inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> flow enhances both energy storage density (ESD) and efficiency (<inline-formula> <tex-math>$eta $ </tex-math></inline-formula>) of the AFE HZO energy storage capacitors (ESCs). X-ray diffraction (XRD) and capacitance–electric (C–E) measurements demonstrate that the t-phase/o-phase ratio in HZO films was adjusted by regulating the V<inline-formula> <tex-math>${}_{!!mathbf {O}}$ </tex-math></inline-formula> concentration to promote t-phase crystallization. The optimal crystallization of the t-phase in HZO films, achieved with 8.0% V<inline-formula> <tex-math>${}_{!!mathbf {O}}$ </tex-math></inline-formula> and 0.82 Zr concentration, results in an ESD of ~86.3 J/cm3 and an efficiency of ~74%. Moreover, we attained exceptional durability, surpassing <inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula> cycles while maintaining 98% of the initial ESD. The results obtained herein provide a novel and effective method to achieve high-performance AFE HZO ESCs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1893-1896"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A Compact and Lightweight Relativistic Magnetron With Permanent Magnets 具有永磁体的紧凑轻便的相对论磁控管

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-18 DOI: 10.1109/LED.2025.3599640

Renjie Cheng;Yuying Wang;Jiaoyin Wang;Yanlin Deng;Bo Zhao;Tingxu Chen;Haiyang Wang;Hao Li;Biao Hu;Tianming Li

{"title":"A Compact and Lightweight Relativistic Magnetron With Permanent Magnets","authors":"Renjie Cheng;Yuying Wang;Jiaoyin Wang;Yanlin Deng;Bo Zhao;Tingxu Chen;Haiyang Wang;Hao Li;Biao Hu;Tianming Li","doi":"10.1109/LED.2025.3599640","DOIUrl":"https://doi.org/10.1109/LED.2025.3599640","url":null,"abstract":"A novel S-band lightweight relativistic magnetron, packaged with permanent magnets and equipped with a compact axial extraction structure, is proposed. In this design, five alternately arranged anode vanes in a 10-cavity rising-sun magnetron are connected via a ring-like structure to enhance the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula> -mode coupling capability. This innovative ring extractor significantly reduces the overall radial dimension of the magnetron, making it consistent with the radius of the resonant cavity structure. Namely, the output structure introduces no additional radial size. Consequently, the proposed design effectively balances structural compactness and high conversion efficiency simultaneously. The reduced output aperture enables the use of a lightweight permanent magnet, bringing the total weight—including both magnetron and magnets—to only 20 kg. Finally, experiments have been conducted to validate the device’s performance, which demonstrates that, under a diode voltage of 172 kV, the proposed relativistic magnetron with permanent magnet achieves an average output power of 175 MW with a conversion efficiency of 30.8%. The combination of compact size and relatively high conversion efficiency makes this device particularly suitable for portable high-power microwave applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1865-1868"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IGZO/HfOx Heterojunction Optoelectronic Memristor With Multiwavelength Response for Neuromorphic Visual System 神经形态视觉系统中具有多波长响应的IGZO/HfOx异质结光电忆阻器

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-18 DOI: 10.1109/LED.2025.3599471

Jiahui Zheng;Zhihao Tao;Zhuangzhuang Li;Xuanyu Shan;Jiulong Sun;Peng Li;Jiaqi Han;Ya Lin;Xiaoning Zhao;Zhongqiang Wang

{"title":"IGZO/HfOx Heterojunction Optoelectronic Memristor With Multiwavelength Response for Neuromorphic Visual System","authors":"Jiahui Zheng;Zhihao Tao;Zhuangzhuang Li;Xuanyu Shan;Jiulong Sun;Peng Li;Jiaqi Han;Ya Lin;Xiaoning Zhao;Zhongqiang Wang","doi":"10.1109/LED.2025.3599471","DOIUrl":"https://doi.org/10.1109/LED.2025.3599471","url":null,"abstract":"Wide-bandgap metal oxide semiconductors possess suitable characteristics for neuromorphic visual systems, including high light absorption efficiency and persistent photoconductivity. However, their limited responsivity to low-energy photons has hindered applications requiring color discrimination and multi-spectral signal processing. To address this challenge, we developed an oxygen-deficient IGZO/HfOx heterojunction memristor with multiwavelength response. The device demonstrates synaptic functionality under 350-680 nm illuminations, such as excitatory postsynaptic current, paired-pulse facilitation, and image perception-memory integration. Leveraging on the optical potentiation and electrical depression characteristics, the color image recognition has achieved 85.8% accuracy in an artificial neural network. The visible-light response of IGZO is ascribed to the oxygen defect energy levels capable of trapping photo-electrons. This work provides a viable pathway for developing high-efficiency neuromorphic vision systems using wide-bandgap oxide semiconductors with full-spectrum detection capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1905-1908"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0