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Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3528280
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引用次数: 0
IEEE Electron Device Letters Publication Information IEEE Electron Device Letters 出版信息
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3526021
{"title":"IEEE Electron Device Letters Publication Information","authors":"","doi":"10.1109/LED.2025.3526021","DOIUrl":"https://doi.org/10.1109/LED.2025.3526021","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"C2-C2"},"PeriodicalIF":4.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857421","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide Band Gap Semiconductors for Automotive Applications
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3528278
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/LED.2025.3528278","DOIUrl":"https://doi.org/10.1109/LED.2025.3528278","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"320-321"},"PeriodicalIF":4.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857427","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Electron Devices Table of Contents
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3526029
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3526029","DOIUrl":"https://doi.org/10.1109/LED.2025.3526029","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"325-C3"},"PeriodicalIF":4.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857344","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Electron Device Letters Information for Authors
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3526027
{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3526027","DOIUrl":"https://doi.org/10.1109/LED.2025.3526027","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"319-319"},"PeriodicalIF":4.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857341","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3528279
{"title":"Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications","authors":"","doi":"10.1109/LED.2025.3528279","DOIUrl":"https://doi.org/10.1109/LED.2025.3528279","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"322-323"},"PeriodicalIF":4.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857359","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EDS Meetings Calendar
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-29 DOI: 10.1109/LED.2025.3526025
{"title":"EDS Meetings Calendar","authors":"","doi":"10.1109/LED.2025.3526025","DOIUrl":"https://doi.org/10.1109/LED.2025.3526025","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"318-318"},"PeriodicalIF":4.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857420","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Capacitive Crossbar Array for Solving Matrix Equations in One-Shot
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-24 DOI: 10.1109/LED.2025.3533607
Madhav Vadlamani;Jianwei Jia;Tian Xie;Yuan-Chun Luo;Junmo Lee;Shaolan Li;Shimeng Yu
{"title":"Capacitive Crossbar Array for Solving Matrix Equations in One-Shot","authors":"Madhav Vadlamani;Jianwei Jia;Tian Xie;Yuan-Chun Luo;Junmo Lee;Shaolan Li;Shimeng Yu","doi":"10.1109/LED.2025.3533607","DOIUrl":"https://doi.org/10.1109/LED.2025.3533607","url":null,"abstract":"The resistive crossbar with a feedback loop has been proposed for solving matrix equations in a linear system with the current-domain computation. But the resistive approach suffers from high static power especially when the resistance is low. To overcome the challenges, we leverage C-V asymmetry in the ferroelectric capacitors of a crossbar array for the energy-efficient charge-domain computation. In this work, we demonstrate that such a capacitive crossbar when operated in negative feedback could solve the matrix problem <inline-formula> <tex-math>$Ax = {b}$ </tex-math></inline-formula> where x is the unknown vector. A comparative study shows a much lower power consumption (~1000<inline-formula> <tex-math>$times $ </tex-math></inline-formula>) for such a matrix solver when compared to the resistive crossbar counterpart.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"389-392"},"PeriodicalIF":4.1,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-22 DOI: 10.1109/LED.2025.3532673
Ziheng Wang;Jinxiu Zhao;Kai Jiang;Yuan Li;Zhenyu Chen;Chen Wang;Guangzheng Yi;Kunlin Cai;Zhiyu Lin;Liankai Zheng;Tianning Cui;Xiuyan Li;Xueli Ma;Guilei Wang;Chao Zhao;Arokia Nathan;Jun Yu;Mengwei Si
{"title":"In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility","authors":"Ziheng Wang;Jinxiu Zhao;Kai Jiang;Yuan Li;Zhenyu Chen;Chen Wang;Guangzheng Yi;Kunlin Cai;Zhiyu Lin;Liankai Zheng;Tianning Cui;Xiuyan Li;Xueli Ma;Guilei Wang;Chao Zhao;Arokia Nathan;Jun Yu;Mengwei Si","doi":"10.1109/LED.2025.3532673","DOIUrl":"https://doi.org/10.1109/LED.2025.3532673","url":null,"abstract":"In this work, we demonstrate high-performance atomic-layer-deposited indium-zinc oxide (IZO) transistors by introducing In2O3-ZnO superlattice, achieving high field-effect mobility (<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula>. The electrical properties, such as carrier density and mobility, can be further tuned by the thickness of In2O3 and ZnO layers beyond material composition. The crystallinity of In2O3-ZnO superlattice channel can also be improved by the design of In2O3 and ZnO multilayer. Therefore, an enhanced <inline-formula> <tex-math>$mu _{text {FE}}$ </tex-math></inline-formula> is achieved together with high on/off ratio and steep subthreshold slope (SS). Besides, devices with channel length down to 80 nm are fabricated, with CF4 plasma treatment utilized to suppress carrier density, achieving high on-current, steep SS and enhancement-mode operation. The In2O3–ZnO superlattice enables a new approach to effectively engineer the material properties of oxide semiconductors for further performance enhancement beyond conventional material composition engineering.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"412-415"},"PeriodicalIF":4.1,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-22 DOI: 10.1109/LED.2025.3532677
Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang
{"title":"A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector","authors":"Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang","doi":"10.1109/LED.2025.3532677","DOIUrl":"https://doi.org/10.1109/LED.2025.3532677","url":null,"abstract":"A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of <inline-formula> <tex-math>${5}.{65}times {10} ^{{4}}~mu $ </tex-math></inline-formula>C<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> Gy<inline-formula> <tex-math>$_{text {air}}^{-{1}}cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>. Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to <inline-formula> <tex-math>$3.02~mu $ </tex-math></inline-formula>Gy<inline-formula> <tex-math>$_{text {air}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. So, the detection limit could be calculated as low as 6.92 nGy<inline-formula> <tex-math>$_{text {air}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"345-348"},"PeriodicalIF":4.1,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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