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Call for Nominations for Editor-in-Chief IEEE Electron Device Letters IEEE电子设备通讯总编辑提名
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562019
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引用次数: 0
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing 诚聘IEEE半导体制造汇刊主编
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562416
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引用次数: 0
Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 用于射频、功率和光电子应用的超宽带隙半导体器件
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562374
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引用次数: 0
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications 探索令人兴奋的多功能氧化物基电子器件世界：从材料到系统级应用
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562041
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引用次数: 0
Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices(TED) IEEE电子设备汇刊（TED）总编辑提名公告
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562020
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引用次数: 0
Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562039
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/LED.2025.3562039","DOIUrl":"https://doi.org/10.1109/LED.2025.3562039","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"887-888"},"PeriodicalIF":4.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981579","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EDS Meetings Calendar EDS会议日程表
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3561995
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引用次数: 0
IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3562045
{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3562045","DOIUrl":"https://doi.org/10.1109/LED.2025.3562045","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"000-C3"},"PeriodicalIF":4.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981576","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-30 DOI: 10.1109/LED.2025.3561991
{"title":"IEEE Electron Device Letters Publication Information","authors":"","doi":"10.1109/LED.2025.3561991","DOIUrl":"https://doi.org/10.1109/LED.2025.3561991","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"C2-C2"},"PeriodicalIF":4.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981566","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Retention Characteristic Optimization Based on Combined Forming Scheme for Resistive Random Access Memory Chip 基于组合成形方案的阻性随机存储器芯片保留特性优化
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-04-29 DOI: 10.1109/LED.2025.3565496
Qingyun Zuo;Xu Zheng;Yudi Zhao;Wubo Li;Yixuan Liu;Qiqiao Wu;Yifei Lu;Yuhang Zhao;Wenchang Zhang;Xiaoxin Xu;Hao Min;Qi Liu
{"title":"Retention Characteristic Optimization Based on Combined Forming Scheme for Resistive Random Access Memory Chip","authors":"Qingyun Zuo;Xu Zheng;Yudi Zhao;Wubo Li;Yixuan Liu;Qiqiao Wu;Yifei Lu;Yuhang Zhao;Wenchang Zhang;Xiaoxin Xu;Hao Min;Qi Liu","doi":"10.1109/LED.2025.3565496","DOIUrl":"https://doi.org/10.1109/LED.2025.3565496","url":null,"abstract":"The long-time retention issue of resistive random access memory (RRAM) presents a significant challenge in maintaining the performance of large-scale RRAM-based computation-in-memory (CIM) systems. To address the long-term inference accuracy degradation caused by RRAM instability, we proposed a combined forming strategy, which can effectively suppress resistance drift and improve inference accuracy without periodic updates of RRAM cells. With this optimized strategy, the probability of high resistance state (HRS) drift was reduced to 5%, and the inference accuracy could be maintained at 88% even after <inline-formula> <tex-math>$10^{{5}}$ </tex-math></inline-formula>s at 125°C. This work provided a valuable strategy for enhancing devices retention and sustaining accuracy in RRAM-based CIM systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1087-1090"},"PeriodicalIF":4.1,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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