IEEE Electron Device Letters最新文献

{"title":"Spectral-Energy Trade-Offs in Memristor Programming Using Generalized Gaussian Voltage Pulses","authors":"E. Miranda;E. Piros;T. Kim;P. Schreyer;J. Gehrunger;T. Oster;J. Suñé;C. Hochberger;L. Alff","doi":"10.1109/LED.2026.3653257","DOIUrl":"https://doi.org/10.1109/LED.2026.3653257","url":null,"abstract":"This work investigates the spectral and energetic aspects of memristor programming using generalized Gaussian voltage pulses. Unlike conventional square or triangular waveforms, generalized Gaussian pulses enable precise control over both temporal shape and frequency content through a tunable shape parameter. By systematically varying the pulse’s effective width and sharpness, we analyze the resulting current response and its dependence on the memristor’s nonlinear and memory-driven dynamics. SPICE simulations reveal how pulse shaping directly affects the spectral distribution, instantaneous power consumption, total programming energy, and programming time. The results highlight key trade-offs among frequency-domain characteristics, pulse amplitude, and energy efficiency, providing practical design guidelines for energy-aware memristive programming. Controlling the frequency spectrum in memristive circuits is critical to preventing parasitic elements in wires and devices from introducing additional signal distortion, which could compromise the accuracy and reliability of in-memory operations. These findings have potential implications for low-power neuromorphic computing, analog signal modulation, and waveform-optimized memory architectures.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 3","pages":"641-644"},"PeriodicalIF":4.5,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11352816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147287864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fiber-Shaped Optoelectronic Synaptic Device for Neuromorphic Computing in Electronic Textiles","authors":"Jieru Song;Jialin Meng;Chen Lu;Tianyu Wang;Hao Zhu;Qingqing Sun;Peining Chen;David Wei Zhang;Lin Chen","doi":"10.1109/LED.2026.3654557","DOIUrl":"https://doi.org/10.1109/LED.2026.3654557","url":null,"abstract":"Neuromorphic computing shows prospects in the field of wearable electronics due to its significant advantages in edge computing. Fiber-shaped devices represent an optimal platform for wearable systems owing to their weaveability. In this work, we demonstrate a two-terminal optoelectronic synaptic device based on IGZO thin films fabricated on Pt fibers. The top electrode was patterned through a special patternization process and fabricated into a two-terminal device, enabling dual-mode optical/electrical neuromorphic functionalities. Based on of long-term potentiation characteristic, the device achieves 92.1% accuracy on MNIST pattern recognition tasks. These results demonstrate viable approaches for functional diversification of fiber-shaped devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 3","pages":"625-628"},"PeriodicalIF":4.5,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147288168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Designing a Low-Loss Phase Change Material Platform for High-Performance Tunable Photonic Multi-Level Devices","authors":"Danian Wang;Zihao Chen;Zitong Zhao;Siyu Yu;Zhenze Li;Zhihao Ren;Chaoquan Hu","doi":"10.1109/LED.2025.3650589","DOIUrl":"https://doi.org/10.1109/LED.2025.3650589","url":null,"abstract":"Tunable photonic multi-level devices (TPMDs), with their low power consumption, multi-state programmability, and massive parallelism, are critical building blocks for next-generation photonic computing. However, the performance of TPMDs is fundamentally limited by a trade-off in conventional phase-change materials (PCMs): the inability to simultaneously achieve a low extinction coefficient (k) for low insertion loss (IL) and a high refractive index contrast (<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>n) for a large extinction ratio (ER). Here, using a Se saturated substitution strategy, we successfully engineered GeSe<inline-formula> <tex-math>${}_{mathbf {{0}.{3}}}$ </tex-math></inline-formula>Te<inline-formula> <tex-math>${}_{mathbf {{0}.{7}}}$ </tex-math></inline-formula> to simultaneously possess a wide bandgap and an metavalant bonding. The resulting material exhibits an outstanding FoM of 27.2, a value 20-fold, 5-fold, and 6-fold greater than those of Ge<inline-formula> <tex-math>${}_{mathbf {{2}}}$ </tex-math></inline-formula>Sb<inline-formula> <tex-math>${}_{mathbf {{2}}}$ </tex-math></inline-formula>Te<inline-formula> <tex-math>${}_{mathbf {{5}}}$ </tex-math></inline-formula>, GeTe and Ge<inline-formula> <tex-math>${}_{mathbf {{2}}}$ </tex-math></inline-formula>Sb<inline-formula> <tex-math>${}_{mathbf {{2}}}$ </tex-math></inline-formula>Se<inline-formula> <tex-math>${}_{mathbf {{4}}}$ </tex-math></inline-formula>Te<inline-formula> <tex-math>${}_{mathbf {{1}}}$ </tex-math></inline-formula>, respectively. Femtosecond laser experiments demonstrate the material’s reliable reversible switching performance and its capacity for high-precision, arbitrary pattern writing. The TPMD constructed from GeSe<inline-formula> <tex-math>${}_{mathbf {{0}.{3}}}$ </tex-math></inline-formula>Te<inline-formula> <tex-math>${}_{mathbf {{0}.{7}}}$ </tex-math></inline-formula> achieves a synergistic optimization of a high ER, low IL, and high Q. This work not only provides a promising new material for high-performance photonic applications but also introduces a generalizable strategy—saturated solid-solution substitution—for designing novel PCMs that combine a high <inline-formula> <tex-math>$Delta $ </tex-math></inline-formula><bold>n with a low k.</b>","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 3","pages":"629-632"},"PeriodicalIF":4.5,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147287862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Tunable Capacitance ReRAM for Improvement of Dynamic Range in CMOS Image Sensors","authors":"S. Chourasia;S. Pande;A. Padovani;L. Larcher;G. Thareja;B. Chakrabarti","doi":"10.1109/LED.2025.3649829","DOIUrl":"https://doi.org/10.1109/LED.2025.3649829","url":null,"abstract":"This work reports a tunable-capacitance resistive memory (TCReRAM) device. The TCReRAM uses a binary metal-oxide active-layer and exhibits strong voltage-dependent capacitance (VDC) under appropriate operating conditions. The observed VDC dynamics is characterized experimentally, and its physical origin is investigated through comprehensive multiscale simulations. The developed TCReRAM device, integrated at the floating diffusion node of a CMOS image sensor (CIS) pixel, introduces VDC that helps mitigate saturation under high illumination conditions. Pixel-level simulations further demonstrate that incorporating the TCReRAM significantly improves the dynamic range by nearly 25% compared to the existing reported Hybrid CIS, effectively addressing performance limitations across varying illumination levels.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 3","pages":"645-648"},"PeriodicalIF":4.5,"publicationDate":"2025-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147288172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/LED.2025.3640260","DOIUrl":"https://doi.org/10.1109/LED.2025.3640260","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 1","pages":"200-201"},"PeriodicalIF":4.5,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11319305","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145852502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Electron Device Letters Information for Authors","authors":"","doi":"10.1109/LED.2025.3640258","DOIUrl":"https://doi.org/10.1109/LED.2025.3640258","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 1","pages":"199-199"},"PeriodicalIF":4.5,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11319309","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145852519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"EDS Meetings Calendar","authors":"","doi":"10.1109/LED.2025.3640256","DOIUrl":"https://doi.org/10.1109/LED.2025.3640256","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 1","pages":"196-198"},"PeriodicalIF":4.5,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11319301","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145852553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3640262","DOIUrl":"https://doi.org/10.1109/LED.2025.3640262","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 1","pages":"202-C3"},"PeriodicalIF":4.5,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11319302","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145852552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Energy Efficient 1-T Relaxation Oscillator Demonstrated Through 22-nm FD-SOI Technology","authors":"V Rajakumari;Aravind Ananthakrishnan;Avinash Choudhary;Arka Halder;Jean-Pierre Raskin;Muhammad Ashraful Alam;Kumar Prasannajit Pradhan","doi":"10.1109/LED.2025.3648498","DOIUrl":"https://doi.org/10.1109/LED.2025.3648498","url":null,"abstract":"A relaxation oscillator (R-O) based on Fully-Depleted SOI (FD-SOI) MOSFET has been implemented using 22FDX technology, achieving low power consumption, and control over the oscillation amplitude V_os and frequency. Oscillatory behavior is achieved by constant current input at negative gate voltage. This results in an oscillatory drain voltage through the single transistor latch (STL) Mechanism. V_os reaches an upper limit of 0.7 V with a tunable gate voltage (V_G) ranging from 0 V to -1 V, leading to a substantial reduction in energy per oscillation for the proposed relaxation oscillator. Although the device demonstrates operation at these low parameter values with oscillation frequency ranging up to kHz range, the frequency can be modulated up to MHz range using the input current. Taking these characteristics into account, the device implemented is well suited for biomedical, neuromorphic, and security device applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 3","pages":"633-636"},"PeriodicalIF":4.5,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147288165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Orbit-Torque Spintronic Devices for Variation-Robust Neuromorphic Computing","authors":"Junwei Zeng;Jiahao Liu;Shan Qiu;Aihua Tang;Teng Xu;Liang Fang;Yang Guo","doi":"10.1109/LED.2025.3644311","DOIUrl":"https://doi.org/10.1109/LED.2025.3644311","url":null,"abstract":"Brain-inspired spintronic artificial neural networks (ANNs) have emerged as promising candidates for next-generation computing systems, yet conventional spin-orbit torque (SOT) devices face challenges of high current density (<inline-formula> <tex-math>$10^{{11}}$ </tex-math></inline-formula>–<inline-formula> <tex-math>$10^{{12}}$ </tex-math></inline-formula> A/m²) and Joule heating-induced variability. Here, we introduce orbit torque (OT) derived from light metal Ti (effective orbit Hall angle <inline-formula> <tex-math>$approx ~0.4$ </tex-math></inline-formula>) to drive ferromagnetic synapses and neurons with a biologically inspired continuously differentiable exponential linear unit (CeLu) activation function. We systematically characterize device variations, including cycle-to-cycle (CTC) and device-to-device (DTD) fluctuations, and reveal that Joule heating significantly contributes to CTC variability through finite element and micromagnetic simulations. Optimizing the neural network depth reduces error propagation induced by CTC variation. Moreover, the network exhibits higher tolerance to DTD variations compared to CTC variations. Our OT-driven all-spin ANN achieves a recognition accuracy of <inline-formula> <tex-math>$90.1 pm ~0.2$ </tex-math></inline-formula>% on the MNIST dataset under combined synaptic and neural CTC and DTD variations. This work provides a viable path towards low-power neuromorphic computing systems by leveraging OT’s advantages of reduced thermal dissipation and stable switching characteristics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 2","pages":"403-406"},"PeriodicalIF":4.5,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}