IEEE Electron Device Letters最新文献_第3页

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET With IGZO Channel Utilizing Postdeposition Annealing 利用沉积后退火技术在带有 IGZO 沟道的 Hf0.5Zr0.5O2 FeFET 中演示大 MW 和出色的耐用性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-20 DOI: 10.1109/LED.2024.3464589

Pan Xu;Pengfei Jiang;Yang Yang;Tiancheng Gong;Wei Wei;Yuan Wang;Xiao Long;Jiebin Niu;Zijing Wu;Xueyang Peng;Zhenhua Wu;Qing Luo

{"title":"Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET With IGZO Channel Utilizing Postdeposition Annealing","authors":"Pan Xu;Pengfei Jiang;Yang Yang;Tiancheng Gong;Wei Wei;Yuan Wang;Xiao Long;Jiebin Niu;Zijing Wu;Xueyang Peng;Zhenhua Wu;Qing Luo","doi":"10.1109/LED.2024.3464589","DOIUrl":"https://doi.org/10.1109/LED.2024.3464589","url":null,"abstract":"With high potential for back-end-of-line (BEOL) integration, HfO2-based FeFETs with amorphous oxide semiconductor (AOS) channels have shown impressive application prospects in recent years, but the issue of limited endurance is still unsolved, which can be mainly attributed to the poor thermal stability of AOSs and the compromised manufacturing process. In this work, we propose a postdeposition annealing (PDA) process to crystallize the Hf\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000Zr\u0000<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\u0000O2 (HZO) layer. Compared with that of the FeFET obtained via the conventional post-metal annealing (PMA) method, the endurance of the optimized FeFET is significantly improved owing to the better HZO-AOS interface. With a TCAD simulation, we prove that the lower the dielectric constant of the HZO layer is, the greater the memory window (MW) that can be achieved, whereas the decreased remnant polarization effect is relatively slight. The proposed FeFET shows a superior large MW (3 V) and excellent endurance, achieving \u0000<inline-formula> <tex-math>$10^{{10}}$ </tex-math></inline-formula>\u0000 cycles with only slight MW degradation, and a 2-bit/cell data storage ability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2110-2113"},"PeriodicalIF":4.1,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Field Emission Properties Optimization of CsPbBr3 Microarrays via Metal Adlayers 通过金属添加层优化铯硼铍微阵列的场发射特性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3462916

HaoNan Lv;HangBo Zhang;YaJun Zhou;QuanLin Ye;XuXin Yang;JianQiang Zhong;HongYing Mao

{"title":"Field Emission Properties Optimization of CsPbBr3 Microarrays via Metal Adlayers","authors":"HaoNan Lv;HangBo Zhang;YaJun Zhou;QuanLin Ye;XuXin Yang;JianQiang Zhong;HongYing Mao","doi":"10.1109/LED.2024.3462916","DOIUrl":"10.1109/LED.2024.3462916","url":null,"abstract":"The application of all inorganic cesium lead halide perovskites in optoelectronic devices has garnered extensive research interest over the past decade, however little studies focused on their field emission properties. Herein, metal adlayers, including Ag, Al, and Zn, are employed to optimize the field emission properties of CsPbBr3 microarrays. The field emission properties of Ag modified CsPbBr3 microarrays outperforms Al or Zn modified CsPbBr3 microarrays. Notably, with an Ag thickness of 5 nm, we achieve the lowest turn-on field of 2.80 V \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m-1 and highest field enhancement factor of 7114.7. The enhanced performance is attributed to increased local electric fields between Ag clusters and extra emitting sites. The increased surface roughness resulting from the Ag modification is another critical factor that enhances the aspect ratio of the emitting materials. This study demonstrates the successful field emission properties optimization of CsPbBr3 microarrays using metal adlayers, offering insights into their application in field emission devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2193-2196"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Picosecond Pulsed Cold-Cathode Electron Gun for Ultrafast Electron Characterization and High-Frequency Radiation Source Applications 用于超快电子表征和高频辐射源应用的皮秒脉冲冷阴极电子枪

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3462962

Dong Han;Yan Shen;Ningsheng Xu;Zheyu Song;Pengbin Xu;Shuai Tang;Yu Zhang;Huanjun Chen;Shaozhi Deng

{"title":"A Picosecond Pulsed Cold-Cathode Electron Gun for Ultrafast Electron Characterization and High-Frequency Radiation Source Applications","authors":"Dong Han;Yan Shen;Ningsheng Xu;Zheyu Song;Pengbin Xu;Shuai Tang;Yu Zhang;Huanjun Chen;Shaozhi Deng","doi":"10.1109/LED.2024.3462962","DOIUrl":"10.1109/LED.2024.3462962","url":null,"abstract":"Ultrafast and ultrashort pulsed electron beams with high peak energy facilitate important applications, such as ultrafast electron characterization and high-frequency radiation source. The development of electron gun device, which simultaneously meets the requirements of ultrashort duration, high efficiency, and miniaturization, remains a challenge. Here, a carbon nanotubes cold-cathode electron gun by a photo-electric synergistic excitation is proposed, to successfully generate an ultrafast and ultrashort pulsed electron beam with repetition frequency of 1 MHz and pulse width of 278 ps. With optimizing the gun structure, a high-performance electron beam was obtained with averaged (peak) beam current over \u0000<inline-formula> <tex-math>$38~mu $ </tex-math></inline-formula>\u0000A (137 mA), averaged (peak) current density over 0.12 A cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000 (435 A cm\u0000<inline-formula> <tex-math>$^{-{2}}text {)}$ </tex-math></inline-formula>\u0000, and electron transmittance higher than 64%, co-excited by electrostatic field of 1.88 V \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m\u0000<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>\u0000 and peak laser intensity of 7.68 MW cm\u0000<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>\u0000. This electron gun shows advantages of low excitation threshold, narrow pulse width and directly generating modulated electron beam from the laser excitation.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2197-2200"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relevance of Hidden Transients in the Steady State Memristor Measurements 稳态 Memristor 测量中隐藏瞬态的相关性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3463388

Jayatika Sakhuja;Kunal Kaushik;Vivek Saraswat;Sandip Lashkare;Udayan Ganguly

{"title":"Relevance of Hidden Transients in the Steady State Memristor Measurements","authors":"Jayatika Sakhuja;Kunal Kaushik;Vivek Saraswat;Sandip Lashkare;Udayan Ganguly","doi":"10.1109/LED.2024.3463388","DOIUrl":"10.1109/LED.2024.3463388","url":null,"abstract":"Highly non-linear selector (S) devices integrated with emerging memristor (R) devices are vital to mitigate sneak path leakage currents in crossbar arrays. For a functional 1S1R bit cell, the selector specifications (on-voltage and currents) should be compatible with the memristor devices (switching voltages and currents). The memristor’s DC switching characteristics are typically considered for selector specifications. In this work, we show that the transient device response of the memristor is necessary for accurately pairing the appropriate selector device. The relevance of hidden transient information has been demonstrated with a detailed analysis of the RESET switching currents in Pr\u0000<inline-formula> <tex-math>$_{text {1- {x}}}$ </tex-math></inline-formula>\u0000 CaxMnO3(PCMO) based resistive random-access memory (RRAM). First, we demonstrate the well-known initial fast and peak current transient of a memristor, which cannot be resolved in steady-state DC timescales. Second, we captured the current for short to long timescales, demonstrating the actual current levels the device experiences before the switching event. Third, we show the dependence of current peaks on the device’s initial state with a significant deviation (~3.5x) in peak and steady-state currents. Finally, we empirically show how the success of the RESET process in the memristor is affected by the current limit imposed by a selector.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2086-2089"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding the Transistor Behavior of Electron-Spin Qubits Above Cryogenic Temperatures 了解电子引脚质子在低温以上的晶体管行为

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3463009

Francesco Lorenzelli;Clement Godfrin;Michele Stucchi;Alexander Grill;Ruoyu Li;Danny Wan;Kristiaan De Greve;Erik Jan Marinissen;Georges Gielen

{"title":"Understanding the Transistor Behavior of Electron-Spin Qubits Above Cryogenic Temperatures","authors":"Francesco Lorenzelli;Clement Godfrin;Michele Stucchi;Alexander Grill;Ruoyu Li;Danny Wan;Kristiaan De Greve;Erik Jan Marinissen;Georges Gielen","doi":"10.1109/LED.2024.3463009","DOIUrl":"10.1109/LED.2024.3463009","url":null,"abstract":"Electron-spin qubits are among the most promising platforms for the realization of a large-scale quantum computer. Physical limitations dictate their operation at cryogenic temperatures, in practice often well below 1 K. This requirement implies the employment of a refrigerator featuring long cooldown times and the need for die packaging, thereby strongly limiting the number of devices that can be measured simultaneously. In our work, we evaluate traditional transistor metrics to enable fast wafer-level screening of electron-spin qubit devices above cryogenic temperatures. To the best of our knowledge, a clear link between quantum dot metrics measured below 2 K and traditional transistor metrics measured at higher temperatures has not yet been identified. In this letter, we study the correlation between 10 mK measurements in the few-electron regime, and traditional transistor metrics at different temperatures. We observe a strong correlation up to 77 K, while correlations at higher temperatures are much less pronounced. We analyze this poor correlation via room-temperature TCAD simulations, showing that the underlying physics changes due to a considerable contribution of the substrate current to the device’s off current above 77 K.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2217-2220"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack 了解采用 HZO-Al2O3-HZO 铁电叠层的 ALD 沉积氧化锌铁氧体场效应晶体管中由偏压引起的不稳定性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3462933

Chen Sun;Qiwen Kong;Gan Liu;Dong Zhang;Leming Jiao;Xiaolin Wang;Jishen Zhang;Haiwen Xu;Yang Feng;Rui Shao;Yue Chen;Xiao Gong

{"title":"Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack","authors":"Chen Sun;Qiwen Kong;Gan Liu;Dong Zhang;Leming Jiao;Xiaolin Wang;Jishen Zhang;Haiwen Xu;Yang Feng;Rui Shao;Yue Chen;Xiao Gong","doi":"10.1109/LED.2024.3462933","DOIUrl":"10.1109/LED.2024.3462933","url":null,"abstract":"In this work, we investigate the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {TH}}text {)}$ </tex-math></inline-formula>\u0000 and memory window (MW) dynamics under positive and negative bias stress (PBS/NBS) in atomic layer deposition (ALD)-grown zinc oxide (ZnO) ferroelectric field-effect transistors (FeFETs). The gate stack is engineered by inserting an Al2O3 layer between Zr-doped HfO2 (HZO) layers to form an HZO-Al2O3-HZO configuration. This enhances the MW of ZnO FeFETs to 1.75 V compared to devices without the Al2O3 insertion. From bias stress characterizations, notable results are obtained, especially under NBS conditions. It is revealed that the generation of disorder state (DS) O\u0000<inline-formula> <tex-math>$^{{2}-}$ </tex-math></inline-formula>\u0000 defects plays a key role when devices are stressed by negative bias, leading to an abnormal positive shift in \u0000<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>\u0000. Importantly, the degradation in MW caused by polarization pinning during NBS is mitigated by applying an even more negative bias. This can be explained by enhanced polarization erasing due to NBS. Our investigations provide a deep understanding of bias stress-induced instabilities in ALD-deposited ZnO FeFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2122-2125"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

80 Gbps PAM-4 Data Transmission With 940 nm VCSELs Grown on a 330 μm Ge Substrate 使用生长在 330 μm Ge 基底面上的 940 nm VCSEL 传输 80 Gbps PAM-4 数据

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI: 10.1109/LED.2024.3462949

Yun-Cheng Yang;Zeyu Wan;Chih-Chuan Chiu;I-Chi Liu;Guangrui Xia;Chao-Hsin Wu

{"title":"80 Gbps PAM-4 Data Transmission With 940 nm VCSELs Grown on a 330 μm Ge Substrate","authors":"Yun-Cheng Yang;Zeyu Wan;Chih-Chuan Chiu;I-Chi Liu;Guangrui Xia;Chao-Hsin Wu","doi":"10.1109/LED.2024.3462949","DOIUrl":"10.1109/LED.2024.3462949","url":null,"abstract":"940 nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) on \u0000<inline-formula> <tex-math>$330~mu $ </tex-math></inline-formula>\u0000 m thick Ge bulk substrates were fabricated and characterized, presenting a novel approach to VCSEL manufacturing. The wafer surfaces demonstrated high smoothness and flatness, with a peak-to-valley wafer distortion of \u0000<inline-formula> <tex-math>$50.3~mu $ </tex-math></inline-formula>\u0000 m, a root mean square roughness (Rq) of 1.34 nm, and an average wafer bow-warp of \u0000<inline-formula> <tex-math>$3.77~mu $ </tex-math></inline-formula>\u0000 m. The Fabry-Pérot dip precisely aligned with the target wavelength, while stopband center mapping exhibited excellent uniformity across the wafer, with a 1.937 nm (0.206%) standard deviation. At 300 K, the Ge-based VCSEL with a \u0000<inline-formula> <tex-math>$6~mu $ </tex-math></inline-formula>\u0000 m oxide aperture achieved an optical peak power of 5.5 mW and a maximum modulation bandwidth of 19.8 GHz, with a roll-over current surpassing 16 mA. Furthermore, the device demonstrated successful data transmission at 53.125 Gbps and 80 Gbps using PAM-4 modulation, achieving transmitter and dispersion eye closure quaternary (TDECQ) penalties of 1.36 dB and 4.70 dB, respectively. These results underscore the potential of thin Ge substrates in advancing VCSEL technology for high-speed optical communication applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2070-2073"},"PeriodicalIF":4.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142267595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Response Time of the High Operating Temperature and Very Long Wavelength Type-II Superlattice InAs/InAsSb Interband Cascade Photodetectors 高工作温度和超长波长 II 型超晶格 InAs/InAsSb 带间级联光电探测器的响应时间

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-16 DOI: 10.1109/LED.2024.3462152

Karol Dąbrowski;Łukasz Kubiszyn;Waldemar Gawron;Bartłomiej Seredyński;Krystian Michalczewski;Chao-Hsin Wu;Yuh-Renn Wu;Piotr Martyniuk

引用次数: 0

Thermal Instability Compensation of Synaptic 3D Flash Memory-Based Hardware Neural Networks With Adaptive Read Bias 基于自适应读取偏置的突触三维闪存硬件神经网络的热不稳定性补偿

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3459615

Jangsaeng Kim;Jiseong Im;Jong-Ho Lee

引用次数: 0

Highly Reliable 4 Mb FeRAM Using a Newly Developed PLZT Capacitor With a Bi-Doped SRO Interlayer 使用新开发的带有双掺杂 SRO 中间层的 PLZT 电容器的高可靠性 4 Mb FeRAM

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI: 10.1109/LED.2024.3459044

W. Wang;T. Eshita;K. Takai;S. Amari;K. Nakamura;M. Oikawa;N. Sato;S. Ozawa;M. Nakabayashi;S. Mihara;Y. Hikosaka;H. Saito;K. Inoue;K. Nagai

{"title":"Highly Reliable 4 Mb FeRAM Using a Newly Developed PLZT Capacitor With a Bi-Doped SRO Interlayer","authors":"W. Wang;T. Eshita;K. Takai;S. Amari;K. Nakamura;M. Oikawa;N. Sato;S. Ozawa;M. Nakabayashi;S. Mihara;Y. Hikosaka;H. Saito;K. Inoue;K. Nagai","doi":"10.1109/LED.2024.3459044","DOIUrl":"10.1109/LED.2024.3459044","url":null,"abstract":"We successfully developed a lanthanum (La)-doped Pb(Zr,Ti)O\u0000<inline-formula> <tex-math>$_{boldsymbol {textbf {3}}}$ </tex-math></inline-formula>\u0000 (PLZT)-based ferroelectric random access memory (FeRAM) with a newly developed ferroelectric capacitor (FC) employing bismuth (Bi)-doped SrRuO\u0000<inline-formula> <tex-math>$_{boldsymbol {textbf {3}}}$ </tex-math></inline-formula>\u0000 (B-SRO), aiming to improve the electrical properties and reliability of the FC. Sputter-deposited SrRuO\u0000<inline-formula> <tex-math>$_{boldsymbol {textbf {3}}}$ </tex-math></inline-formula>\u0000, commonly used as an interlayer between the metal electrode and ferroelectric layers to improve FC characteristics, does not necessarily result in good electrical properties due to the low atomic density of SRO, typically up to 85%. To address this, we employed a B-SRO interlayer deposited by a B-SRO target with an atomic density up to 95%. FCs utilizing B-SRO exhibit significantly better electrical properties, endurance (\u0000<inline-formula> <tex-math>$gt 10^{boldsymbol {textbf {14}}}$ </tex-math></inline-formula>\u0000 at 90°C), and retention (approximately 10 years at 125°C) compared to FCs without B-SRO. Reliability tests based on JESD22-A108 standards, confirm that our 4Mb FeRAM with B-SRO is highly reliable and commercially available.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2126-2129"},"PeriodicalIF":4.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0