IEEE Electron Device Letters最新文献_第3页

Demonstration of a Re-Activatable Scandate Cathode for a High-Current Sheet Beam Electron Gun 用于大电流片束电子枪的可再激活阴极的演示

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-18 DOI: 10.1109/LED.2025.3599234

Zhifang Lyu;Shengkun Jiang;Yasong Fan;Dejun Jin;Jibo Dong;Huarong Gong;Yubin Gong;Jiasong Wang;Pan Pan;Jinjun Feng;Zhaoyun Duan

{"title":"Demonstration of a Re-Activatable Scandate Cathode for a High-Current Sheet Beam Electron Gun","authors":"Zhifang Lyu;Shengkun Jiang;Yasong Fan;Dejun Jin;Jibo Dong;Huarong Gong;Yubin Gong;Jiasong Wang;Pan Pan;Jinjun Feng;Zhaoyun Duan","doi":"10.1109/LED.2025.3599234","DOIUrl":"https://doi.org/10.1109/LED.2025.3599234","url":null,"abstract":"A re-activatable scandate cathode for a high-current sheet beam electron gun was demonstrated in experiment. The re-activatable scandate cathode was impregnated with high purity emission-active materials composed of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ba2ScAlO5 and Ba3Al2O6, which were synthesized employing the polyacrylamide-assisted sol-gel method. The emission-active materials are essential for the scandate cathode to achieve low hygroscopicity and re-activatability. As a result, the re-activatable scandate cathode exhibits a low mass gain of only 0.005% after 1000 hours in air, and delivers an emission current density of 42 A/cm2 at 1140 °C. The high-performance scandate cathode was integrated into a compact sheet beam electron gun, which features a stepped elliptical focus electrode to enable anisotropic electrostatic compression. At a cathode temperature of 1140 °C and a beam voltage of 24.6 kV, the sheet beam electron gun yields a compressed sheet beam with a peak beam current of 189 mA. During three independent air-exposure, evacuation, and re-activation cycles, the beam current varied by no more than 5%. These findings confirm that the re-activatable scandate cathode is suitable for the high-current sheet beam electron gun.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1869-1872"},"PeriodicalIF":4.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A High-Density 3-D Capacitor Using Through Glass Via Structure 一种采用玻璃通孔结构的高密度三维电容器

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-15 DOI: 10.1109/LED.2025.3599178

Su-Geun Kim;Sung-Chai Yoo;Jeongwon Oh;Byung-Wook Min;Jong-Min Yook

引用次数: 0

A Novel P-bit Unit Based on VGSOT-MTJ for Reconfigurable Ising Machine With Fully Parallel Spin Updating Design 基于VGSOT-MTJ的全并行自旋更新可重构机p位单元

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-14 DOI: 10.1109/LED.2025.3598983

Wentao Huang;Kaili Zhang;Junlin Wang;Yu Liu;Bolin Zhang;Youguang Zhang;Weisheng Zhao;Lang Zeng;Deming Zhang

{"title":"A Novel P-bit Unit Based on VGSOT-MTJ for Reconfigurable Ising Machine With Fully Parallel Spin Updating Design","authors":"Wentao Huang;Kaili Zhang;Junlin Wang;Yu Liu;Bolin Zhang;Youguang Zhang;Weisheng Zhao;Lang Zeng;Deming Zhang","doi":"10.1109/LED.2025.3598983","DOIUrl":"https://doi.org/10.1109/LED.2025.3598983","url":null,"abstract":"The spin-based probabilistic bit (p-bit) built on magnetic tunnel junction (MTJ) provides a low power and low overhead solution for building high performance Ising machine (IM). In this work, we propose a novel p-bit device that integrates a voltage-controlled magnetic anisotropy (VCMA) MTJ biased by spin-orbit torque (SOT) voltage. The proposed p-bit achieves an energy consumption of approximately 33fJ/bit per operation. A synchronous Ising network utilizing this device demonstrates rapid convergence to near-ground-state solutions when solving a <inline-formula> <tex-math>${13}times {26}$ </tex-math></inline-formula>-vertex Max-Cut problem in simulation. Furthermore, a reconfigurable IM architecture, realized through the coupling of MTJ array, enables an all-spin Ising system capable of addressing various combinatorial optimization problems (COPs). The proposed IM system also exhibits functional reconfigurability among multiple invertible Boolean logic gates, achieving a peak accuracy of 95%. These results highlight the potential of the proposed p-bit as a promising building block for high-speed, low-power and universal Ising machines.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1889-1892"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of an Ultra-Wideband Sine-Shape Staggered Waveguide for a Terahertz Band Sheet Beam TWT 太赫兹带片束行波管超宽带正弦交错波导的研究

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-14 DOI: 10.1109/LED.2025.3598920

Jiacai Liao;Guoxiang Shu;Xinqiang Li;Binbin Shi;Shengtao Hong;Longshen Huang;Cunjun Ruan;Wenlong He

{"title":"Study of an Ultra-Wideband Sine-Shape Staggered Waveguide for a Terahertz Band Sheet Beam TWT","authors":"Jiacai Liao;Guoxiang Shu;Xinqiang Li;Binbin Shi;Shengtao Hong;Longshen Huang;Cunjun Ruan;Wenlong He","doi":"10.1109/LED.2025.3598920","DOIUrl":"https://doi.org/10.1109/LED.2025.3598920","url":null,"abstract":"A novel slow wave structure (SWS) featuring an innovative sine-shape staggered waveguide (SSW) and dual-mode operation has been developed for ultra-wideband sheet beam travelling wave tubes. In contrast to the double-staggered grating SWS, the SSW SWS is equivalent to reducing the grating height, enabling the broadening of the operational bandwidth while maintaining interaction impedance characteristics. Numerical simulations demonstrate exceptional broadband characteristics with <inline-formula> <tex-math>${S}_{{11}}$ </tex-math></inline-formula> below -15.3 dB and <inline-formula> <tex-math>${S}_{{21}}$ </tex-math></inline-formula> exceeding -8.5 dB across 237-324 GHz (87 GHz), achieving 31.0% fractional bandwidth. Cold-test results are consistent with the simulation results having considered fabrication tolerances, electromagnetic leakage, and surface roughness effects. PIC simulations predict good performance, achieving 65.0 W output power over a 76 GHz bandwidth (236-312 GHz, 27.8% fractional bandwidth), with a peak output power of 253.0 W at 250 GHz.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1873-1876"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transistor-Structured Artificial Dendrites for Spatiotemporally Correlated Reservoir Computing 用于时空相关油藏计算的晶体管结构人工树突

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-14 DOI: 10.1109/LED.2025.3598823

Yao Ni;Yumo Zhang;Jingjie Lin;Xingji Liu;Yue Yu;Lu Liu;Wei Zhong;Yayi Chen;Rongsheng Chen;Hoi Sing Kwok;Yuan Liu

{"title":"Transistor-Structured Artificial Dendrites for Spatiotemporally Correlated Reservoir Computing","authors":"Yao Ni;Yumo Zhang;Jingjie Lin;Xingji Liu;Yue Yu;Lu Liu;Wei Zhong;Yayi Chen;Rongsheng Chen;Hoi Sing Kwok;Yuan Liu","doi":"10.1109/LED.2025.3598823","DOIUrl":"https://doi.org/10.1109/LED.2025.3598823","url":null,"abstract":"Neuromorphic electronics, which integrate sensing, storage, and computing to boost efficiency and performance, offer a low-cost, energy-efficient alternative for temporal data processing with edge computing potential when applied to reservoir computing (RC). However, current neuromorphic RC systems struggle with diverse spatial information inputs due to device design limits. Here, we present the first artificial dendrite horizontally cascaded by Ga-Sn-O (GTO)-based synaptic transistors with efficient electron-ion coupled films as the gate dielectric. This design allows unlimited lateral gate expansion, source/drain and gate interchangeability, and sustains a microampere-level output current across a record centimeter-scale gate-channel distance. The artificial dendrite maintains stable weight modulation through <inline-formula> <tex-math>$10^{mathbf {{5}}}$ </tex-math></inline-formula> electrical cycles and <inline-formula> <tex-math>$10^{mathbf {{7}}}$ </tex-math></inline-formula> bending cycles, with performance restorable via dielectric film replacement. This work pioneers the demonstration of spatiotemporally correlated reservoir computing using artificial dendrites-based RC systems, achieving highly accurate recognition and introducing a new paradigm to the field.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1881-1884"},"PeriodicalIF":4.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bio-Inspired Ferroelectric Adaptive Transistors for Intelligent Vision Systems 用于智能视觉系统的仿生铁电自适应晶体管

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-11 DOI: 10.1109/LED.2025.3597286

Yongkai Liu;Aolin Yuan;Ruihong Yuan;Pei Liu;Zhe Qu;Kangli Xu;Jiajie Yu;Zhenhai Li;Jialin Meng;Hao Zhu;Qingqing Sun;David Wei Zhang;Tianyu Wang;Lin Chen

{"title":"Bio-Inspired Ferroelectric Adaptive Transistors for Intelligent Vision Systems","authors":"Yongkai Liu;Aolin Yuan;Ruihong Yuan;Pei Liu;Zhe Qu;Kangli Xu;Jiajie Yu;Zhenhai Li;Jialin Meng;Hao Zhu;Qingqing Sun;David Wei Zhang;Tianyu Wang;Lin Chen","doi":"10.1109/LED.2025.3597286","DOIUrl":"https://doi.org/10.1109/LED.2025.3597286","url":null,"abstract":"To address the challenges of low data processing efficiency, spatiotemporal information separation, and high energy consumption in traditional machine vision systems, this work proposes a bio-inspired ferroelectric adaptive transistor based on annealing-free HZO ferroelectric films. The FeTFT achieves the lowest fabrication temperature while demonstrating exceptional performance with a high ON/OFF ratio of <inline-formula> <tex-math>${3}.{8}times {10} ^{{9}}$ </tex-math></inline-formula> and a large memory window of 2.86 V. The FeTFT exhibits bio-synaptic optoelectronic co-response characteristics and implements biological adaptive functions through dynamic reconfiguration of ferroelectric polarization. By constructing a fire vision system based on the spatiotemporal fusion mechanism, the FeTFT achieves 100% motion direction recognition accuracy and three-level speed classification capability. This research establishes a novel paradigm for developing low-power, dynamically adaptable bio-inspired intelligent vision systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1901-1904"},"PeriodicalIF":4.5,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fully-Tunable Tunnel-Coupled Quantum Dots and Charge Sensing in a Commercial 22 nm FD-SOI Process 全可调谐隧道耦合量子点与22nm商用FD-SOI制程中的电荷传感

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-05 DOI: 10.1109/LED.2025.3595384

C. Power;M. Moras;A. Sokolov;C. Rohrbacher;X. Wu;S. V. Amitonov;I. Kriekouki;A. Aprà;P. Giounanlis;M. Asker;M. Harkin;P. Hanos-Puskai;P. Bisiaux;I. Bashir;D. Redmond;D. Leipold;R. B. Staszewski;B. Barry;N. Samkharadze;E. Blokhina

引用次数: 0

The Impact of Through Silicon Metal (TSM) Contact on Performance and Thermal Reliability in CFET 通过金属硅（TSM）接触对CFET性能和热可靠性的影响

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-04 DOI: 10.1109/LED.2025.3595404

Yunho Shin;Been Kwak;Ilho Myeong;Daewoong Kwon

引用次数: 0

Stress-Enhanced Ferroelectric Properties in Flexible Hf0.5Zr0.5O2 Devices With Low Thermal Budget 低热预算柔性Hf0.5Zr0.5O2器件的应力增强铁电性能

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-08-04 DOI: 10.1109/LED.2025.3595286

Qimiao Zeng;Wei Wang;Shuo Han;Chuanzhi Liu;Jindong Liu;Yi Sun;Lidan Wang;Hui Xu;Qingjiang Li;Rongrong Cao;Shukai Duan

引用次数: 0

Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588288

引用次数: 0