IEEE Electron Device Letters最新文献_第3页

Understanding of GIDL-State Degradation (GSD): The Reliability Challenge in pFET Standby Mode for Sub-20-nm DRAM Technology

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-17 DOI: 10.1109/LED.2025.3539678

Da Wang;Yong Liu;Longda Zhou;Yongkang Xue;Pengpeng Ren;Runsheng Wang;Zhigang Ji;Ru Huang

引用次数: 0

64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541145

Jiahao Chen;Parthasarathy Seshadri;Kenneth Stephenson;Md Abdullah Mamun;Ruixin Bai;Zehuan Wang;Asif Khan;Chirag Gupta

{"title":"64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)","authors":"Jiahao Chen;Parthasarathy Seshadri;Kenneth Stephenson;Md Abdullah Mamun;Ruixin Bai;Zehuan Wang;Asif Khan;Chirag Gupta","doi":"10.1109/LED.2025.3541145","DOIUrl":"https://doi.org/10.1109/LED.2025.3541145","url":null,"abstract":"In this letter, we report a heterostructure field effect transistor (HFET) with Al0.87Ga0.13N barrier and Al0.64Ga0.36N channel grown by metalorganic chemical vapor deposition (MOCVD). TLM measurements of the structure showed a sheet resistance of <inline-formula> <tex-math>$sim ~2000~Omega $ </tex-math></inline-formula>/sq and linear ohmic contact resistance of <inline-formula> <tex-math>$4.54~Omega cdot $ </tex-math></inline-formula> mm. A HFET with a gate length of <inline-formula> <tex-math>$sim ~200$ </tex-math></inline-formula> nm, source-drain spacing of <inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>m showed a peak transconductance of ~40 mS/mm and a high peak drain current of ~0.6 A/mm. A current gain cutoff frequency (f<inline-formula> <tex-math>$_{text {T}}text {)}$ </tex-math></inline-formula> of 15.7 GHz and a power gain cutoff frequency of 20.4 GHz was observed. The breakdown voltage of this device is 390 V, yielding a high Johnson’s figure of merit (JFOM) of 6.1 THz<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> V. This JFOM value is one of the highest reported JFOM values for AlxGa<inline-formula> <tex-math>$_{text {1-{x}}}$ </tex-math></inline-formula>N channel HFET (x >0.4) and also for other ultra-wide bandgap (UWBG) transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"545-548"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541929

Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen

{"title":"High-Performance Perovskite Photodetector With Multi-Peak Response Under Edge Illumination Configuration","authors":"Sadeq Abbasi;Xiangyu Zhou;Feiyun Zhao;Aobo Ren;Kai Shen","doi":"10.1109/LED.2025.3541929","DOIUrl":"https://doi.org/10.1109/LED.2025.3541929","url":null,"abstract":"In this letter, the operational characteristics and performance of perovskite photodetectors were systematically studied under edge illumination, revealing significant performance enhancements in a CsFAPbI3 perovskite device compared to vertical illumination. At 0 V bias, responsivity improved from 8.3 A/W to 214 A/W, and detectivity increased from <inline-formula> <tex-math>$1.67 times ; 10^{{12}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$1.49 times ; 10^{{13}}$ </tex-math></inline-formula> Jones compared to vertical illumination. The lateral light penetration resulted in distinct and repeatable multi-peak response patterns over a frequency range of 0.2-5 kHz and light intensities of 0.68-6.56 mW/cm2. The dynamic response of the device was effectively modeled as a second-order system, demonstrating its potential for secure communication applications. This setup also enabled precise control over the photodetector’s size at small dimensions by simply adjusting the thickness, achieving an active area of just <inline-formula> <tex-math>$10^{-{5}}$ </tex-math></inline-formula> cm2 under edge illumination. This study underscores the promise of edge illumination for optimizing perovskite photodetectors and is currently under further investigation to broaden its applicability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"624-627"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrections to “Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition”

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541608

Wenbin Han;Yanyu Deng;Wenwen Liu;Zhuowei Li;Chunyu Liu;Wenbin Guo

引用次数: 0

The New Method to Focus Multiple Sheet Electron Beam by Periodic Cusped Magnets With Multi-Zeros-Point Bias Magnetic Field

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541232

Pengcheng Yin;Jinchi Cai;Jin Xu;Jian Zhang;Lingna Yue;Hairong Yin;Yong Xu;Guoqing Zhao;Wenxiang Wang;Yanyu Wei

{"title":"The New Method to Focus Multiple Sheet Electron Beam by Periodic Cusped Magnets With Multi-Zeros-Point Bias Magnetic Field","authors":"Pengcheng Yin;Jinchi Cai;Jin Xu;Jian Zhang;Lingna Yue;Hairong Yin;Yong Xu;Guoqing Zhao;Wenxiang Wang;Yanyu Wei","doi":"10.1109/LED.2025.3541232","DOIUrl":"https://doi.org/10.1109/LED.2025.3541232","url":null,"abstract":"The lack of a compact magnetic focusing system hurdles fulfilling the prominent potential of traveling wave tubes (TWTs) launched with multiple sheet electron beams (SEBs). To overcome this dilemma, this letter proposed an intriguing general method to confine multiple SEBs, which adopts novel horizontally extended periodic cusped magnets (PCM) with a multi-zero-point bias magnetic field. A new configuration with bespoke iron notches for multiple SEBs (Open PCM-NMSB) is employed to produce this unique field profile. To verify this concept, a G-band multi-SEB electron optical system (EOS) is presented, depicting that multiple paralleled SEBs can all stably propagate through the narrow tunnel without interceptions. Further investigation demonstrates that this new method can apply to EOS launched with an arbitrary number of SEBs with any preset clearance. In addition, the fabrication and measurement of this compact focusing structure are presented, experimentally confirming that the proposed Open PCM-NMSB can indeed generate the desired magnetic field, which surely facilitates the development of multi-SEB TWT or other similar vacuum electron devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"652-655"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of High Transconductance Gate-All-Around Transistors Using Negative Capacitance ‘Super High-K’ Gate Stack

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541547

Jong Ho Park;Nirmaan Shanker;Suraj Cheema;Shang-Lin Hsu;Aditya Varma;Chia-Chun Lee;Chirag Garg;Urmita Siker;Li-Chen Wang;Chenming Hu;Sayeef Salahuddin

引用次数: 0

ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI: 10.1109/LED.2025.3541373

Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi

{"title":"ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators","authors":"Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi","doi":"10.1109/LED.2025.3541373","DOIUrl":"https://doi.org/10.1109/LED.2025.3541373","url":null,"abstract":"This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results demonstrate mechanical quality factors (<inline-formula> <tex-math>${Q}_{m}$ </tex-math></inline-formula>) as high as 380, Bode quality factors (<inline-formula> <tex-math>${Q}_{textit {Bode}}$ </tex-math></inline-formula>) approaching 500, electromechanical coupling coefficients (<inline-formula> <tex-math>${k}_{t}^{{2}}$ </tex-math></inline-formula>) of 4.5%, an overall Figure of Merit (<inline-formula> <tex-math>$textit {FOM} = {Q}_{m} cdot {k}_{t}^{{2}}$ </tex-math></inline-formula>) exceeding 17, and power handling greater than 20 dBm for devices closely matched to <inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula>. To the best of the authors’ knowledge, S2MRs exhibit the highest Key Performance Indicators (KPIs) among solidly mounted resonators in the Ku-band, paving the way for the integration of nanoacoustic devices on fast substrates with high-power electronics, tailored for military and harsh-environment applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"660-663"},"PeriodicalIF":4.1,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-10 DOI: 10.1109/LED.2025.3540156

E. Brusaterra;E. Bahat Treidel;L. Deriks;S. Danylyuk;E. Brandl;J. Bravin;M. Pawlak;A. Külberg;M. Schiersch;A. Thies;O. Hilt

{"title":"Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes","authors":"E. Brusaterra;E. Bahat Treidel;L. Deriks;S. Danylyuk;E. Brandl;J. Bravin;M. Pawlak;A. Külberg;M. Schiersch;A. Thies;O. Hilt","doi":"10.1109/LED.2025.3540156","DOIUrl":"https://doi.org/10.1109/LED.2025.3540156","url":null,"abstract":"In this work, we demonstrate vertical GaN pn-diodes for high voltage applications initially grown and processed on 4” sapphire substrates and then transferred to 4” tungsten substrates to achieve a fully vertical conduction path. Laser lift-off was used to separate the GaN-membrane device structures from the initial sapphire substrate. The diodes show improved forward conduction after the transfer process with on-state resistance reduced from <inline-formula> <tex-math>$1.52~pm ~0.05$ </tex-math></inline-formula> m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 to <inline-formula> <tex-math>$1.15~pm ~0.05$ </tex-math></inline-formula> m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 and the blocking strength is not heavily compromised with its mean value reduced from <inline-formula> <tex-math>$1015~pm ~47$ </tex-math></inline-formula> V to <inline-formula> <tex-math>$988~pm ~57$ </tex-math></inline-formula> V. High device yields of the membrane transfer procedure underscores this cost-competitive vertical GaN device technology for high-power applications without the need of expensive GaN substrates.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"564-567"},"PeriodicalIF":4.1,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photolithographic PEDOT:PSS Electrodes for Transparent and Conformal Organic Transistors

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-10 DOI: 10.1109/LED.2025.3540472

Yanping Ni;Chuang Xue;Xiaoli Zhao;Peng Xue;Yanhong Tong;Qingxin Tang;Yichun Liu

{"title":"Photolithographic PEDOT:PSS Electrodes for Transparent and Conformal Organic Transistors","authors":"Yanping Ni;Chuang Xue;Xiaoli Zhao;Peng Xue;Yanhong Tong;Qingxin Tang;Yichun Liu","doi":"10.1109/LED.2025.3540472","DOIUrl":"https://doi.org/10.1109/LED.2025.3540472","url":null,"abstract":"Poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) is widely used as electrode material for transparent and conformal organic thin-film transistors (TC-OTFTs) owing to its excellent conductivity, high transparency, and good mechanical flexibility. However, due to the lack of high-precision and high-density transparent flexible electrodes, the high-level integration of TC-OTFTs faces a huge challenge. Here, we propose a simple protective layer photolithography strategy that successfully achieves non-destructive photolithography of PEDOT:PSS. The pattern feature size is down to 750 nm, which is the smallest size of PEDOT:PSS reported so far. Based on such high-precision transparent electrodes, we successfully fabricate TC-OTFTs with a device density up to 50,020 transistors <inline-formula> <tex-math>${text{cm}}^{-{2}}$ </tex-math></inline-formula>, which is the highest value reported for TC-OTFTs. More strikingly, the device showcases outstanding mobility of 1.51 cm2<inline-formula> <tex-math>${text{V}}^{-{1}} {text{s}}^{-{1}}$ </tex-math></inline-formula>. This work provides a reliable photolithography strategy to realize scalable fabrication and high-density integration of TC-OTFTs, offering a significant potential for developing wearable invisible electronics with high density and performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"604-607"},"PeriodicalIF":4.1,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Snapback-Free and Fast-Switching SOI LIGBT With Integrated Double Self-Biased MOSFET

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-07 DOI: 10.1109/LED.2025.3539708

Weizhong Chen;Xiangwei Zeng;Ao Wu;Cheng Li;Zhengsheng Han

{"title":"A Snapback-Free and Fast-Switching SOI LIGBT With Integrated Double Self-Biased MOSFET","authors":"Weizhong Chen;Xiangwei Zeng;Ao Wu;Cheng Li;Zhengsheng Han","doi":"10.1109/LED.2025.3539708","DOIUrl":"https://doi.org/10.1109/LED.2025.3539708","url":null,"abstract":"A novel SOI-LIGBT integrating a Double Self-driving MOSFET (DSM) is proposed. The DSM consists of a Self-Biased P-MOS (SBP) with a shorted main gate and a Self-Biased N-MOS (SBN) with a shorted auxiliary gate. These components are designed to function without additional gate signals, and they are driven automatically by the operating state of the LIGBT. During forward conduction, the SBP (<inline-formula> <tex-math>${V}_{text {GS,{P}}} gt {V}_{text {thp}}$ </tex-math></inline-formula>) is turned off, whereas the SBN gradually turns on as the <inline-formula> <tex-math>${V}_{text {CE}}$ </tex-math></inline-formula> increases. The P-buried substrate of SBN creates a potential barrier for electron carriers, effectively eliminating the snapback effect. During reverse conduction, the SBP (<inline-formula> <tex-math>${V}_{text {GS,{P}}} lt {V}_{text {thp}}$ </tex-math></inline-formula>) is turned on, and the SBN is turned off, functioning as a P-MOS in series with a PN-junction diode. During turn-off, the SBP (<inline-formula> <tex-math>${V}_{text {GS,{P}}} lt {V}_{text {thp}}$ </tex-math></inline-formula>) and the SBN (<inline-formula> <tex-math>${V}_{text {GS,{N}}} gt {V}_{text {thn}}$ </tex-math></inline-formula>) are reactivated to extract excess carriers. Consequently, the DSM-LIGBT achieves a superior tradeoff between <inline-formula> <tex-math>${V}_{text {ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${E}_{text {OFF}}$ </tex-math></inline-formula>. At <inline-formula> <tex-math>${V}_{text {ON}} =1.22$ </tex-math></inline-formula> V, the <inline-formula> <tex-math>${E}_{text {OFF}}$ </tex-math></inline-formula> is reduced by 30%, 30.32%, and 68.23% compared with SBM-LIGBT, TBSA-LIGBT, and SSA-LIGBT, respectively.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"537-540"},"PeriodicalIF":4.1,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0