IEEE Electron Device Letters最新文献

{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/LED.2025.3551195","DOIUrl":"https://doi.org/10.1109/LED.2025.3551195","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"669-669"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10941744","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 0.035°/h Quad-Mass Gyroscope With an Initial Frequency Difference Operating Under Mode Matching","authors":"Bo Jiang;Zhuolin Yu;Jing Zhang;Chen Lin;Yan Su","doi":"10.1109/LED.2025.3554794","DOIUrl":"https://doi.org/10.1109/LED.2025.3554794","url":null,"abstract":"For MEMS (Micro-Electromechanical System) Coriolis vibrating gyroscopes, mode matching provides exceptionally high mechanical sensitivity. Typically, mode-matching gyroscopes require a completely symmetrical structure, resulting in two identical degenerate modes from a dynamics perspective. However, this requirement imposes strict demands on manufacturing precision. This letter introduces a quad-mass gyroscope with an initial frequency split, which relaxes the symmetry requirements of the micro-manufacturing process while maintaining high performance. The proposed design features an ultra-strong, quasi-linear tuning capability achieved through bias voltage and a differentiated design for the drive and readout comb capacitors. These innovations minimize mechanical noise and maximize capacitive gain sensitivity. Additionally, direct current bias voltage is applied to suppress quadrature errors caused by torsional stiffness. This state-of-the-art design achieves a low-noise, low-demodulation-error quad-mass gyroscope, capable of detecting angular rate thresholds as low as 0.001°/s. Experimental results demonstrate a bias instability of 0.035°/h, as indicated by the Allan variance curve, and an angular random walk noise of 0.0093°/<inline-formula> <tex-math>$surd $ </tex-math></inline-formula>h. Beyond its superior performance, this design effectively mitigates micromachining process imperfections, making it highly suitable for mass production.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"837-840"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Electron Devices Table of Contents","authors":"","doi":"10.1109/LED.2025.3551223","DOIUrl":"https://doi.org/10.1109/LED.2025.3551223","url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"675-C3"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10942388","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"10-second Cu/Polymer Hybrid Bonding Using Area-Selective Metal Passivation for 3D Integration","authors":"Yu-Lun Liu;Tzu-Yu Chen;Kazuaki Ebisawa;Makiko Irie;Ya-Chien Chuang;Hsiao-Wei Yeh;Satoshi Fujimura;Kuan-Neng Chen","doi":"10.1109/LED.2025.3554768","DOIUrl":"https://doi.org/10.1109/LED.2025.3554768","url":null,"abstract":"This study presents the development of a Cu/polymer hybrid bonding process achieving 10 seconds of bonding duration at low temperatures (<inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$200~^{circ }$ </tex-math></inline-formula>C). Key innovations include a polymer material enabling rapid bonding (<10> <tex-math>${3}times {10}^{-{9}}Omega cdot $ </tex-math></inline-formula>cm2, with higher bonding temperatures yielding more consistent electrical properties. Furthermore, Daisy chain measurement and cross-sectional SEM analysis confirmed bonding and signal integrity across varying contact nodes. This work highlights the potential of Cu/polymer hybrid bonding for high-throughput and high-performance applications, addressing key bonding reliability and manufacturing efficiency challenges.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"833-836"},"PeriodicalIF":4.1,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robust Field-Free Voltage-Gated Spin-Orbit Torque Switching in IrMn-Based Perpendicular Magnetic Tunnel Junctions","authors":"Zhaochun Liu;Shouzhong Peng;Weixiang Li;Jiahao Liu;Jiaqi Lu;Shiyang Lu;Danrong Xiong;Kaihua Cao;Weisheng Zhao","doi":"10.1109/LED.2025.3554698","DOIUrl":"https://doi.org/10.1109/LED.2025.3554698","url":null,"abstract":"Spin-orbit torque (SOT) magnetic random-access memory (MRAM) is a promising candidate for next-generation memory technologies due to its non-volatility, high speed, and low power consumption. In this letter, we experimentally demonstrate SOT switching in 80 nm IrMn-based perpendicular magnetic tunnel junctions with a pulse width down to 0.8 ns. Field-free SOT switching is achieved with the assistance of the in-plane exchange bias (EB) generated at the antiferromagnetic/ferromagnetic interface. Remarkably, after <inline-formula> <tex-math>$1times 10^{{10} }$ </tex-math></inline-formula> bipolar switchings, the stable field-free SOT switching can still be achieved, and the EB field remains at 3.25 mT, showing a robust EB and reliable SOT switching performance. The introduction of the voltage-controlled magnetic anisotropy effect results in a 35% reduction in power consumption. Furthermore, the voltage-gated SOT devices achieve a low write error rate below <inline-formula> <tex-math>$5times 10^{-5}$ </tex-math></inline-formula> and a high endurance over <inline-formula> <tex-math>$1times 10^{{11} }$ </tex-math></inline-formula> cycles. These findings highlight the potential of IrMn-based SOT-MRAM for advanced memory technology applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"745-748"},"PeriodicalIF":4.1,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bionic Gustatory Receptor for pH Identification Based on ZnSnO Nanofiber Synaptic Transistor","authors":"Xianglong Wang;Peilong Xu;Wenxin Zhang;Jiaqi Xu;Kai Liu;Guangya Liu;Fengyun Wang","doi":"10.1109/LED.2025.3553591","DOIUrl":"https://doi.org/10.1109/LED.2025.3553591","url":null,"abstract":"The development of physiology and neurological diseases is normally accompanied by the production of acidic changes, making it crucial to develop biosensing system to detect pH variations to prevent early organ lesions. Due to the electrical double layer at the electrolyte/nanowire interface, artificial synaptic transistors can sensitively detect the pH variations. However, few studies focus on monitoring pH variations of the body based on synaptic transistors. In this study, electrolyte-gated synaptic transistors were fabricated using zinc tin oxide (ZnSnO) nanowires as channel materials. The fabricated devices can successfully mimic the functionality of acid-sensing ion channels (ASICs) in biological synapses, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitations (PPFs), and short-term potentiations (STPs) under acidic conditions. Furthermore, <inline-formula> <tex-math>${3}times {3}$ </tex-math></inline-formula> ZnSnO synaptic transistor arrays were constructed to monitor acid stimulations of diverse intensities and different regions to mimic the tongue ability of human. This work can not only advance the understanding of ASIC functionality in artificial synaptic devices, but also provide a novel approach to develop bioinspired taste-sensing systems with integrated sensing and memory capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"697-700"},"PeriodicalIF":4.1,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Two-Tier FinFETs With Low-Temperature (≤ 500 °C) Silicide Dopant Segregation Schottky S-D for M3D Circuits","authors":"Feixiong Wang;Yadong Zhang;Yunjiao Bao;Shuang Liu;Xuexiang Zhang;Shujuan Mao;Mingzheng Ding;Jinbiao Liu;Jiaxin Yao;Qingzhu Zhang;Huaxiang Yin","doi":"10.1109/LED.2025.3553873","DOIUrl":"https://doi.org/10.1109/LED.2025.3553873","url":null,"abstract":"In this work, 2-tier Monolithic 3-Dimentional (M3D) integrated FinFETs and circuits are fabricated based on a low-temperature (<inline-formula> <tex-math>$le 500~^{circ }$ </tex-math></inline-formula>C) silicide dopant segregation Schottky Source/Drian (SDSS S-D) technology. By forming NiPt silicide followed by B/P implantation and optimizing annealing on top-tier fins, a sharpened Schottky Barrier of the silicide and a high dopant segregation concentration of the impurities are obtained in the improved silicide S-D with maximum process temperature below <inline-formula> <tex-math>$500~^{circ }$ </tex-math></inline-formula>C. As a result, Low-T 2-tier M3D FinFETs are obtained with I<inline-formula> <tex-math>${}_{text {ON}}= 646.4~mu $ </tex-math></inline-formula>A/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m for PMOS and I<inline-formula> <tex-math>${}_{text {ON}} = 450.6~mu $ </tex-math></inline-formula>A/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m for NMOS at L<inline-formula> <tex-math>${}_{text {G}}=500$ </tex-math></inline-formula> nm and a record I<inline-formula> <tex-math>${}_{text {ON}}=1.84$ </tex-math></inline-formula> mA/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m is achieved for PMOS at L<inline-formula> <tex-math>${}_{text {G}} =25$ </tex-math></inline-formula> nm under normalized footprint. Furthermore, M3D inverter, ring oscillators, as well as 6T SRAM with this technique are demonstrated, which is promising to provide an effective and low-cost method to achieve low-temperature high- performance silicon circuits in M3D applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"693-696"},"PeriodicalIF":4.1,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Power 100 kW CW Q-Band Gyro-TWT: Performance and Stability","authors":"Wei Jiang;Chaoxuan Lu;Jianwei Zhou;Yafen Shang;Qiang Zheng;Boxin Dai;Guo Liu;Jianxun Wang;Yelei Yao;Yong Luo","doi":"10.1109/LED.2025.3553624","DOIUrl":"https://doi.org/10.1109/LED.2025.3553624","url":null,"abstract":"To satisfy the demand for high-power microwave sources, a Q-band 100 kW continuous-wave (CW) gyrotron traveling wave tube (gyro-TWT) is fabricated and experimentally demonstrated in this letter. The stability and uniformity of electron emission are greatly improved through the application of cathode coating thin-film technology. The power capacity of the device is assessed using efficient thermal management methods. Experimental results show that the gyro-TWT, driven by a 56 kV-7.9 A electron beam, achieves a maximum CW power of 115.6 kW, a gain of 54.9 dB, and an efficiency of 26.1% at 49.5 GHz. The device operates stably for a long time, with performance at the forefront of current technology.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"860-863"},"PeriodicalIF":4.1,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Influence of Optical Absorption Saturation on Transient Performance of SiC Photoconductive Semiconductor Switch","authors":"Ting He;Tao Xun;Ripin Wang;Xinyue Niu;Langning Wang;Ting Shu","doi":"10.1109/LED.2025.3553836","DOIUrl":"https://doi.org/10.1109/LED.2025.3553836","url":null,"abstract":"The influence of optical absorption saturation on transient performance of silicon carbide (SiC) photoconductive semiconductor switch (PCSS) is investigated. Under both single pulse and burst mode laser conditions, experiments are conducted on the PCSS. The PCSS is subjected to laser irradiation with a pulse width of 8 ns, with an energy range of 0.1 mJ to 63 mJ. It is observed that as the laser energy increases, the on-state resistance of the device progressively decreases until it reaches saturation, and the pulse width expands from 8 ns to 17 ns. Under the condition of a burst mode laser with a pulse width of 25 ns, the laser energy increases from 1 mJ to 20 mJ, the modulation depth ratio diminishes and the output power gradually reaches saturation. A comprehensive internal physical model is developed, which elucidates that with increasing laser energy, the device experiences optical absorption saturation. This phenomenon leads to an increase of the pulse width and a saturation of the electron concentration.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"701-704"},"PeriodicalIF":4.1,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstration of High-Current E-Mode MOSFETs Using Heteroepitaxial ε-Ga₂O₃ on 4H-SiC Substrates","authors":"Shengheng Zhu;Linxuan Li;Tiecheng Luo;Weiqu Chen;Chenhong Huang;Xifu Chen;Zhanyun Huang;Zimin Chen;Yanli Pei;Gang Wang;Xing Lu","doi":"10.1109/LED.2025.3553520","DOIUrl":"https://doi.org/10.1109/LED.2025.3553520","url":null,"abstract":"High-current enhancement mode (E-mode) metal-oxide-semiconductor field effect transistors (MOSFETs) have been demonstrated using heteroepitaxial <inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>-Ga2O3 on 4H-SiC substrates. The devices featured an unintentionally-doped (UID) channel and ultra-highly conductive access regions, which were realized by a selective-area fluorine-plasma surface doping process. In the access regions, a high sheet carrier concentration (<inline-formula> <tex-math>${n}_{text {s}}text {)}$ </tex-math></inline-formula> exceeding <inline-formula> <tex-math>${3}times {10} ^{{14}}$ </tex-math></inline-formula> cm−2 combined with a mobility of 47.1 cm2/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> s was achieved, significantly reducing the parasitic resistance. The fabricated E-mode MOSFET with a channel length (<inline-formula> <tex-math>${L}_{text {CH}}text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$2~mu $ </tex-math></inline-formula>m exhibited a high maximum drain current density (<inline-formula> <tex-math>${I}_{text {DS, max}}text {)}$ </tex-math></inline-formula> of 209 mA/mm, a positive threshold voltage (<inline-formula> <tex-math>${V}_{text {th}}text {)}$ </tex-math></inline-formula> of 2.7 V, a large peak transconductance (<inline-formula> <tex-math>${G}_{text {m, max}}text {)}$ </tex-math></inline-formula> of 42 mS/mm, and a high on/off current ratio (<inline-formula> <tex-math>${I}_{text {on}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {off}}text {)}$ </tex-math></inline-formula> exceeding <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula>. These competitive performance metrics are mainly attributed to the low parasitic resistance in the access regions and the high thermal conductivity of the 4H-SiC substrate, highlighting the great potential of heteroepitaxial <inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>-Ga2O3-on-4H-SiC MOSFETs for high-power and high-frequency applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"721-724"},"PeriodicalIF":4.1,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}