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High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531377
Leilei Cui;Chao Zhong;Hailong Hu;Tailiang Guo;Fushan Li
{"title":"High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure","authors":"Leilei Cui;Chao Zhong;Hailong Hu;Tailiang Guo;Fushan Li","doi":"10.1109/LED.2025.3531377","DOIUrl":"https://doi.org/10.1109/LED.2025.3531377","url":null,"abstract":"Quantum dot photodiodes (QLEDs) hold promising potential for next-generation display and lighting devices due to their high emission efficiency, high color purity in the visible region, tunability of emission wavelengths, and low manufacturing costs. However, QLEDs confine a large number of photons inside the device that cannot be utilized, leading to low external quantum efficiency. In this paper, a simple and efficient strategy to construct bilayer light extraction structures is developed based on the self-assembled polystyrene (PS) microspheres embedded in polyvinyl butyral (PVB) film with excellent thermoplasticity. The maximum external quantum efficiency (EQE) of blue-QLED, green-QLED and red-QLED increased from 8.18% to 13.51%, 12.96% to 19.61% and 21.7% to 25%, respectively. It is found that bilayer light extraction structure does not change the light intensity angular distribution of Lambertian emission mode. The bilayer optically coupled structure proposed in this work provides an efficient and stable way for the improvement of QLED performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"452-455"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531547
C. De Camaret;G. Bourgeois;R. Antonelli;F. Mazen;M. Coig;F. Milesi;M. Bernard;V. Meli;S. Martin;N. Castellani;F. Andrieu;G. Navarro
{"title":"Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory","authors":"C. De Camaret;G. Bourgeois;R. Antonelli;F. Mazen;M. Coig;F. Milesi;M. Bernard;V. Meli;S. Martin;N. Castellani;F. Andrieu;G. Navarro","doi":"10.1109/LED.2025.3531547","DOIUrl":"https://doi.org/10.1109/LED.2025.3531547","url":null,"abstract":"In this work we investigate the effects of lateral Carbon ions implantation in 4 kb Ge-rich GeSbTe (GST) Wall-type Phase-Change Memory (PCM) arrays with the objective of improving their reliability. Differently from previous studies, the ion beam was here tilted and tuned to localize Carbon at the lateral interface between the phase-change material and the SiN encapsulation layer after the patterning steps, known to have an important impact on the cell performances. Through the characterization of 4 kb arrays combined with TEM/EDX analyses, we study the effects of such localized Carbon on the device performances. Carbon laterally implanted devices show a more reliable forming process, a variability reduction of the SET and RESET states and an enhanced data retention at 250°C.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"385-388"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531434
Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang
{"title":"1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range","authors":"Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang","doi":"10.1109/LED.2025.3531434","DOIUrl":"https://doi.org/10.1109/LED.2025.3531434","url":null,"abstract":"In this work, we present a novel one-transistor active pixel sensor with enhanced strong light response based on a semi-floating gate (SFG) transistor. The proposed device employs a metal-oxide-semiconductor (MOS) capacitor to store photo-generated holes from backside illumination, resulting in a larger full well capacity and improved light absorption characteristics. Our results demonstrate that the device exhibits an exceptionally wide light intensity response range, from <inline-formula> <tex-math>${1}.{0}times {10} ^{-{6}}$ </tex-math></inline-formula> mW/cm2 to <inline-formula> <tex-math>${1}.{0}times {10} ^{{2}}$ </tex-math></inline-formula> mW/cm2, achieving a substantial readout current difference exceeding <inline-formula> <tex-math>$0.1~mu $ </tex-math></inline-formula>A. Furthermore, the low light response can be enhanced by more than 8 times by adjusting the operating voltage. Under standard 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m node, the fill factor is also improved by 30% without increase in cost and tenfold reduction is achieved in power consumption simultaneously.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"448-451"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD Modeling of ESD Diode Overshoot During Ultrafast TLP Events
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531797
Emanuele Groppo;Harald Gossner;Ralf Brederlow
{"title":"TCAD Modeling of ESD Diode Overshoot During Ultrafast TLP Events","authors":"Emanuele Groppo;Harald Gossner;Ralf Brederlow","doi":"10.1109/LED.2025.3531797","DOIUrl":"https://doi.org/10.1109/LED.2025.3531797","url":null,"abstract":"This study exploits Technology Computer-Aided Design (TCAD) simulations to investigate the voltage overshoot phenomenon in Electrostatic Discharge (ESD) protection diodes undergoing fast rise time pulses, which severely threatens integrated circuits reliability. The conventional TCAD approach for diode transient characterization, based on the thermodynamic transport model and neglecting avalanche generation in the forward bias region, is challenged based on a comparative simulation study. A more comprehensive approach relying on the hydrodynamic carrier transport model is proposed, solving mismatches between simulation results and experimental data of scaled devices operating in the picosecond regime. The improved prediction of diode overshoot allows for transient response optimization, which is essential for the tightly constrained protection design of high-speed interfaces. An approximate solution of the Boltzmann Transport Equation (BTE) using the Spherical Harmonic Expansion (SHE) method is also carried out to provide more physical insights, and the overshoot dependence on rise time is investigated.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"468-471"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3532255
Zefu Zhao;Kai-Jhih Gan;Shenglin Pan;Shaohao Wang;Tiaoyang Li;Dun-Bao Ruan
{"title":"Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer","authors":"Zefu Zhao;Kai-Jhih Gan;Shenglin Pan;Shaohao Wang;Tiaoyang Li;Dun-Bao Ruan","doi":"10.1109/LED.2025.3532255","DOIUrl":"https://doi.org/10.1109/LED.2025.3532255","url":null,"abstract":"This work demonstrates a low thermal budget amorphous InWO (<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO) thin film transistor (TFT) achieving a subthreshold swing (S.S.) of 40 mV/decade without utilizing a ferroelectric gate oxide. The oxygen vacancies in <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO induce the formation of an interfacial dipole layer at the surface between <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO and SiO2/HfO2. The TFT with dipole-rich interface exhibits the S.S. value below 60 mV/decade over 2 decades of drain current. X-ray diffraction (XRD) confirmed the absence of the ferroelectric orthorhombic phase in the HfO2 layer. Besides, the low thermal budget <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO TFT also exhibits a high field effect mobility of 97 cm2/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>s and a large on/off current ratio of 1.8E6, while the process temperature is as low as <inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>C.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"436-439"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Cusp Gun With Two Control Electrodes Biased at Different Voltages
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531894
Bo Li;Junqiang Gao;Guoxiang Shu;Huabi Yin;Wenlong He
{"title":"Design of a Cusp Gun With Two Control Electrodes Biased at Different Voltages","authors":"Bo Li;Junqiang Gao;Guoxiang Shu;Huabi Yin;Wenlong He","doi":"10.1109/LED.2025.3531894","DOIUrl":"https://doi.org/10.1109/LED.2025.3531894","url":null,"abstract":"A cusp gun with two coaxial control electrodes biased at different voltages was optimized through parametric simulations for a gyrotron traveling-wave amplifier aiming to achieve an output power of 10 kW at a central operating frequency of 220 GHz. The on and off of the electron beam are controlled by applying an appropriate bias to the electrodes. An annular axis-encircling electron beam with a current of 1.5 A, a pitch factor of 1.23, was simulated when the gun was operated at 70 kV. The pitch-factor spread was improved from 5.0% to 3.4% by adjusting the different bias voltages applied to the control electrodes.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"484-487"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast Switching of 4H-SiC Light Triggered Thyristor by Photoconductive Assistance
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531368
Xi Wang;Yuxi Wan;Xuan Ji;Yulei Zhang;Hongbin Pu;Qi Wang;Zhiming Chen
{"title":"Fast Switching of 4H-SiC Light Triggered Thyristor by Photoconductive Assistance","authors":"Xi Wang;Yuxi Wan;Xuan Ji;Yulei Zhang;Hongbin Pu;Qi Wang;Zhiming Chen","doi":"10.1109/LED.2025.3531368","DOIUrl":"https://doi.org/10.1109/LED.2025.3531368","url":null,"abstract":"A 4H-SiC light-triggered thyristor is fabricated and triggered by a 355nm UV laser for fast switching performance by photoconductive assistance. The switching characteristics of the thyristor are tested in a resistive load circuit with a 220nF capacitor as an energy storage element. By combining the high-power UV light with a multi-gate structure, the thyristor is switched on fast through the photoconduction mechanism, overcoming the limitation of the internal positive feedback formation process. The peak current of the thyristor reaches to 328A, and the corresponding current density is about 8.2kA/cm2. The highest current rising rate (dI/dt) obtained in this work is 27.3kA/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>s, and the corresponding current density rising rate is 682.5 kA/(cm<inline-formula> <tex-math>$^{{2}}cdot mu $ </tex-math></inline-formula>s).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"361-364"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First Demonstration of Deeply Scaled 2T0C DRAM With Record Data Retention and Fast Write Speed
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531420
Shenwu Zhu;Qianlan Hu;Qijun Li;Shiwei Yan;Honggang Liu;Ranhui Liu;Yanqing Wu
{"title":"First Demonstration of Deeply Scaled 2T0C DRAM With Record Data Retention and Fast Write Speed","authors":"Shenwu Zhu;Qianlan Hu;Qijun Li;Shiwei Yan;Honggang Liu;Ranhui Liu;Yanqing Wu","doi":"10.1109/LED.2025.3531420","DOIUrl":"https://doi.org/10.1109/LED.2025.3531420","url":null,"abstract":"In this work, the first pitch scaling of 2T0C dynamic random-access memory (DRAM) based on indium-tin-oxide (ITO) transistors has been successfully fabricated, achieving a record-low contact length of 20 nm and channel length of 10 nm. The deeply scaled 2T0C DRAM demonstrates multi-level operation with an ultra-fast write speed of 10 ns, facilitated by a high on-state current. Furthermore, it features an outstanding data retention time exceeding 3000 s, attributed to its low off-state leakage current of <inline-formula> <tex-math>$1.3 times {10}^{-20}$ </tex-math></inline-formula>A/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m. This work highlights the tremendous potential of oxide semiconductor-based 2T0C DRAM for future high-density memory applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"405-408"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531369
Meng Zhang;Bo Wang;Yuwei Zhao;Zhendong Jiang;Lei Lu;Yan Yan;Lung-Chien Chen;Man Wong;Hoi-Sing Kwok
{"title":"Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor","authors":"Meng Zhang;Bo Wang;Yuwei Zhao;Zhendong Jiang;Lei Lu;Yan Yan;Lung-Chien Chen;Man Wong;Hoi-Sing Kwok","doi":"10.1109/LED.2025.3531369","DOIUrl":"https://doi.org/10.1109/LED.2025.3531369","url":null,"abstract":"In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN characteristics due to its unique device structure. The dominant mechanism of LFN varies with the channel length and overdrive voltage. The competition between carrier number fluctuation and mobility fluctuation is mainly tuned by the annihilation of ionized oxygen vacancies in the active layer located in the overlap region between the gate and the source/drain electrode. Besides, the short channel effect is also involved. This work provides a fresh perspective on LFN in metal oxide (MO) TFTs, offering practical design guidelines for fabricating robust MO TFTs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"432-435"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall
IF 4.1 2区 工程技术
IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531443
Linbo Hao;Liu Wang;Yanan Guo;Xue-Jiao Sun;Kai Guo;Congmin Shen;Tong Zhang;Xiaona Zhang;Shen Wang;Xiaojun Jia;Junxi Wang;Jinmin Li;Yonghui Zhang;Zi-Hui Zhang;Naixin Liu;Jianchang Yan
{"title":"Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall","authors":"Linbo Hao;Liu Wang;Yanan Guo;Xue-Jiao Sun;Kai Guo;Congmin Shen;Tong Zhang;Xiaona Zhang;Shen Wang;Xiaojun Jia;Junxi Wang;Jinmin Li;Yonghui Zhang;Zi-Hui Zhang;Naixin Liu;Jianchang Yan","doi":"10.1109/LED.2025.3531443","DOIUrl":"https://doi.org/10.1109/LED.2025.3531443","url":null,"abstract":"It is well known that inclined sidewall scattering structures can improve the light extraction efficiency (LEE) of micro deep ultraviolet (DUV) light-emitting diodes (LEDs). However, effective inclined sidewall designs for chip-scale high-power DUV LEDs are rarely reported. In this work, we use a fluorine-based oily liquid to form a self-assembled liquid cup. It has a chip-scale inclined sidewall surrounding the DUV LED chip. Experimental and simulation results show that the LEE of DUV LED with liquid cup is significantly enhanced. It can be attributed to the enlarged light escape cone, the additional out-light areas, and the scattering effects of the inclined sidewall. Consequently, the proposed DUV LED achieves a wall-plug efficiency (WPE) of 10.7% at 350 mA. Compared to conventional DUV LEDs, the WPE is enhanced by 64.9%. Moreover, the optical field distribution shows more light from the proposed DUV LED is deflected towards the vertical direction. This method shows great potential to advance high-power DUV LED development and expedite the replacement of mercury lamps.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"377-380"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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