IEEE Electron Device Letters最新文献_第4页

Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 用于射频、功率和光电子应用的超宽带隙半导体器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588290

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IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588292

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IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588286

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IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588280

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Reliability of Advanced Nodes 高级节点可靠性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588276

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EDS Meetings Calendar EDS会议日程表

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-25 DOI: 10.1109/LED.2025.3588284

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Ga₂O₃-Based Optoelectronic Synapse With Piezo/Photo-Gated Modulation for Multimodal Perception 基于Ga₂O₃的光电突触与压电/光门控调制用于多模态感知

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-22 DOI: 10.1109/LED.2025.3590716

Hongbin Wang;Peng Li;Lin Yang;Zhongzheng Jin;Jiangang Ma;Yichun Liu

{"title":"Ga₂O₃-Based Optoelectronic Synapse With Piezo/Photo-Gated Modulation for Multimodal Perception","authors":"Hongbin Wang;Peng Li;Lin Yang;Zhongzheng Jin;Jiangang Ma;Yichun Liu","doi":"10.1109/LED.2025.3590716","DOIUrl":"https://doi.org/10.1109/LED.2025.3590716","url":null,"abstract":"Ga2O3 leverage high deep-ultraviolet (DUV) responsivity and persistent photoconductivity (PPC) to enable low-power synaptic devices. However, limited PPC relaxation controllability in existing Ga2O3 synapses restricts tunable plasticity. This work demonstrates a piezo/photo-gated modulated Ga2O3/ZnO synaptic device for multimodal perception. The device exhibits reconfigurable synaptic plasticity—including paired-pulse facilitation, short-to-long-term plasticity transition, and dynamic weight modulation—under 254 nm light pulses. Crucially, compressive strain (-0.57%) enhances synaptic weight change by 22% (from 1076.3% to 1310.2%), attributed to strain-induced band bending at the heterojunction interface that regulates carrier separation and oxygen vacancy recombination. This strain-modulated behavior enables intelligent health care to the human body, where electrocardiogram pattern recognition achieves 83.5% accuracy using a single-layer neural network. This study establishes a viable approach for developing functionally tunable photoelectric synapses with co-integrated sensing-memory-processing capabilities for artificial tactile-perception systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1525-1528"},"PeriodicalIF":4.5,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination p-GaN/AlGaN/GaN hemt栅极可靠性的增强

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-21 DOI: 10.1109/LED.2025.3590787

Manuel Fregolent;Carlo De Santi;Mirco Boito;Michele Disarò;Alessio Pirani;Maria Eloisa Castagna;Cristina Miccoli;Giansalvo Pizzo;Isabella Rossetto;Lorenzo Cerati;Ferdinando Iucolano;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini

{"title":"Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination","authors":"Manuel Fregolent;Carlo De Santi;Mirco Boito;Michele Disarò;Alessio Pirani;Maria Eloisa Castagna;Cristina Miccoli;Giansalvo Pizzo;Isabella Rossetto;Lorenzo Cerati;Ferdinando Iucolano;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini","doi":"10.1109/LED.2025.3590787","DOIUrl":"https://doi.org/10.1109/LED.2025.3590787","url":null,"abstract":"This letter substantially improves the understanding on the degradation of normally-OFF GaN HEMTs with p-GaN gate subject to forward gate stress, and demonstrates that a significant reliability enhancement can be obtained at high bias through hole injection from the gate terminal. Key results are: (i) for the first time we adopt an experimental setup capable of investigating the threshold voltage shift of the devices during time-dependent breakdown tests in a wide time window (from <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>s to failure). (ii) Remarkably, we demonstrate that the acceleration factor for gate breakdown is substantially lower at high stress voltage. (iii) The lower acceleration factor of degradation at high voltages is correlated to the number of holes which are injected and trapped in the gate stack. The results give strong experimental evidence that the injection of holes from the p-GaN contact can have a beneficial effect on device robustness, by reducing – through recombination – the amount of hot electrons responsible for degradation.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1517-1520"},"PeriodicalIF":4.5,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

4 A/300 V Switching of Lateral β-Ga2O3 MOSFET Devices 侧向β-Ga2O3 MOSFET器件的4a / 300v开关

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-21 DOI: 10.1109/LED.2025.3590836

Kornelius Tetzner;Houssam Halhoul;Martin Damian Cuallo;Oliver Hilt

{"title":"4 A/300 V Switching of Lateral β-Ga2O3 MOSFET Devices","authors":"Kornelius Tetzner;Houssam Halhoul;Martin Damian Cuallo;Oliver Hilt","doi":"10.1109/LED.2025.3590836","DOIUrl":"https://doi.org/10.1109/LED.2025.3590836","url":null,"abstract":"This work reports on the high-voltage switching performance of lateral <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 MOSFET devices, emphasizing dynamic behavior under kilowatt-class operating conditions. Large-periphery devices with a total gate width of 92 mm were characterized using pulsed I-V and transient switching measurements. Pulsed output characteristics revealed a peak drain current of 13 A – the highest reported for a <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 transistor—alongside an on-resistance of 720 m<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>. High-voltage switching transients were captured using on-wafer measurements and the devices were subjected to off-state drain voltages up to 350 V. The measured on-state drain current degraded from 8.5 A to 2.5 A as the off-state drain voltage increased from 10 V to 350 V, corresponding to a fourfold increase of the dynamic on-state resistance. This degradation is attributed to charge trapping at interface states or within the channel, possibly related to Fe-doping or implantation-induced defects. The observed switching dispersion correlates with low channel mobility and underscores the importance of optimizing the process technology as well as material quality. Nevertheless, the characterization of switching transients at 4 A / 300 V demonstrates the first kilowatt-class switching operation in <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 power transistors, underscoring their potential for next-generation power electronics applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1601-1604"},"PeriodicalIF":4.5,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High Temperature AlGaN/GaN MISHEMT With W/AlON Gate Stack and Imax>1 A/mm at 500 ∘C 高温AlGaN/GaN MISHEMT，带W/AlON栅堆，Imax>1 A/mm, 500°C

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-17 DOI: 10.1109/LED.2025.3590318

John Niroula;Qingyun Xie;Elham Rafie Borujeny;Shisong Luo;Minsik Oh;Matthew A. Taylor;Yuji Zhao;Tomás Palacios

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