基于欺骗表面等离子激元极化的太赫兹片上低通滤波器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-22 DOI:10.1109/LED.2025.3563208

Kai-Da Xu;Dongxu Wang;Ying-Jiang Guo;Yiqun Liu;Pin Wen

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引用次数: 0

摘要

提出了一种利用片上欺骗表面等离子激元（SSPPs）的新型硅锗（SiGe） d波段低通滤波器（LPF）。通过分析独特的色散特性，可以通过调整片上SSPP单元格的宽度来控制该LPF的截止频率。然后，可以通过修改单元格中的存根槽的长度来进一步微调。为了证明这一点，制作了一个LPF的实例并进行了实验测试，其模拟和测量结果很好地吻合。所制LPF样机的测量截止频率为160 GHz。由于其强场约束和灵活可调的特性，所提出的片上SSPP结构在太赫兹等离子体器件和电路中的应用具有吸引力。

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A Terahertz On-Chip Lowpass Filter Based on Spoof Surface Plasmon Polaritons

A new silicon germanium (SiGe)-based D-band lowpass filter (LPF) is proposed utilizing on-chip spoof surface plasmon polaritons (SSPPs). By analyzing the unique dispersion characteristics, the cutoff frequency of this on-chip SSPP-based LPF can be easily controlled by adjusting the width of the SSPP unit cell. Then, it can be further fine-tuned by modifying the length of the stub slot in the unit cell. For demonstration, an example of the proposed LPF is fabricated and experimentally tested, whose simulated and measured results are in good agreement. The measured cutoff frequency of the fabricated LPF prototype is 160 GHz. Due to its strong field confinement and flexibly tunable characteristics, the proposed on-chip SSPP structure is attractive for the applications in terahertz plasmonic devices and circuits.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.