Vertical Channel-All-Around (CAA) IGZO FET With Recessed Source/Drain Structure to Improve Contact Characteristics

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-23 DOI:10.1109/LED.2025.3563839

Chuanke Chen;Chen Gu;Yue Zhao;Xinlv Duan;Congyan Lu;Jiebin Niu;Kaiping Zhang;Yu Liu;Shengjie Zhao;Weiwei Li;Wanming Wu;Chunyu Zhang;Ke Hu;Shipeng Wang;Qingding Tong;Yinzhi Tang;Nianduan Lu;Di Geng;Ling Li

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引用次数: 0

Abstract

We proposed recessed source/drain(S/D) structure for vertical channel-all-around (CAA) IGZO FET to introduce contact interlayer and improve its contact characteristics. The IZO interlayer introduced between S/D and IGZO helps to reduce the contact resistance, and boosting the performance of CAA IGZO FET. The fabricated CAA IGZO FETs with 8 nm IZO interlayer show an average Ion @ V

${}_{\text {th}}+1$

V of

$32.6~\mu $

$\mu $

m, SS of 86 mV/dec, and Vth of - 0.06 V. The Schottky barrier height

${q}\phi _{B}$

is extracted to be reduced from 170 meV to 65 meV by introducing the contact interlayer, which confirms the improvement of contact characteristics.

查看原文本刊更多论文

垂直通道全能（CAA） IGZO场效应管与凹源/漏结构，以改善接触特性

我们提出了垂直沟道全能（CAA） IGZO场效应管的凹源漏（S/D）结构，以引入接触间层并改善其接触特性。在S/D和IGZO之间引入的IZO中间层有助于降低接触电阻，提高CAA IGZO FET的性能。制备的8 nm IZO夹层CAA IGZO fet的平均离子@ V ${}_{\text {th}}+1$ V为$32.6~\mu $ A/ $\mu $ m， SS为86 mV/dec， Vth为- 0.06 V。通过引入接触中间层，提取出肖特基势垒高度${q}\phi _{B}$从170 meV降至65 meV，证实了接触特性的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.