Vertical Ultra-Wide Bandgap Al0.5Ga0.5N P-N Memory Diodes

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-23 DOI:10.1109/LED.2025.3563594

Hang Chen;Shuhui Zhang;Tianpeng Yang;Tingting Mi;Xiaowen Wang;Chao Liu

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引用次数: 0

Abstract

We report vertical p-n memory diodes based on ultra-wide bandgap

$Al_{{0}.{5}}$

$Ga_{{0}.{5}}$

N heterostructures on sapphire substrates. A conductive path with variable resistance is formed in the AlGaN p-n diodes at a low trigger voltage of

$\text {-}47$

V, thanks to the intentionally inserted heavily doped n-

$Al_{{0}.{5}}$

$Ga_{{0}.{5}}$

N layer at the p-n junction interface. A notable hysteresis phenomenon can be observed, characterized by repeatable write/erase program cycles. Consistent and repeatable switching performance across 100 cycles has been observed, verifying the stability of the conductive path in the vertical AlGaN p-n memory diodes. These results provide promising strategies and potential reference for developing robust and reliable memory devices based on III-nitride ultra-wide bandgap semiconductors.

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垂直超宽带隙Al0.5Ga0.5N P-N存储二极管

我们报道了基于超宽带隙$Al_{{0}的垂直pn存储二极管。{5}} $ $ Ga_{{0}。蓝宝石衬底的{5}}$ N异质结构。由于有意插入大量掺杂的n- Al_{{0}，在低触发电压（$ $ text {-}47$ V）下，在AlGaN p-n二极管中形成了可变电阻的导电通路。{5}} $ $ Ga_{{0}。{5}}$ N层在p-n结界面。可以观察到一个显著的迟滞现象，其特征是可重复的写/擦除程序周期。在100个周期内观察到一致和可重复的开关性能，验证了垂直AlGaN p-n存储二极管导电路径的稳定性。这些结果为开发基于iii -氮化物超宽带隙半导体的鲁棒可靠存储器件提供了有前途的策略和潜在的参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.