Dual-Gate Hybrid Ferroelectric Transistor Combines Photo-Switchable Logic and Memory for Encrypted Optical Communication

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-22 DOI:10.1109/LED.2025.3563268

Shasha Li;Xinyue Xu;Yong Yan

引用次数: 0

Abstract

The demand for progressive miniaturization of optoelectronic devices drives advancements in contemporary information technology, including edge computing, image recognition, and data encryption in terminal devices. The logic-in-memory architecture enables monolithic integration of memory and logic functions. In this study, we suggest a dual-gate hybrid ferroelectric transistor (DG-HFT) consisting of the vertically stacked tellurium/

$\alpha $

-In2Se3 junction and metal-insulator-semiconductor gate structure. This enables the integration of three fundamental logic functions (NAND, NOR, and NXOR) with in-situ memory capabilities within a single device. Using DG-HFT as reconfigurable phototransistor, we implemented an encrypted optical communication system, advancing next-generation multifunctional information systems.

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用于加密光通信的双栅混合铁电晶体管结合了光开关逻辑和存储器

对光电器件逐步小型化的需求推动了当代信息技术的进步，包括终端设备的边缘计算、图像识别和数据加密。内存中的逻辑架构可以实现内存和逻辑功能的单片集成。在这项研究中，我们提出了一种由垂直堆叠的碲/ α -In2Se3结和金属-绝缘体-半导体栅极结构组成的双栅混合铁电晶体管（DG-HFT）。这使得三种基本逻辑功能（NAND， NOR和NXOR）能够在单个器件中集成原位存储功能。利用DG-HFT作为可重构光电晶体管，实现了加密光通信系统，推进了下一代多功能信息系统的发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.