基于阶跃脊波导的InGaAlAs/InP MQW晶体管激光器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-23 DOI:10.1109/LED.2025.3563705

Yijia Liu;Lijun Qiao;Xin Tang;Song Liang;Mingjiang Zhang

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引用次数: 0

摘要

我们提出并数值研究了一种新的阶梯脊波导InGaAlAs/InP多量子阱（MQW）晶体管激光器（TL）。暴露的深脊波导侧壁导致的载流子非辐射复合中心显著降低了TLs的光电性能。阶梯式脊波导结构引导载流子穿过脊波导的中心部分，从而有效地减轻了非辐射复合缺陷的影响。仿真结果表明，阶跃脊型晶体管的光电特性远优于传统的深脊型晶体管，且阶跃脊型晶体管的电流放大系数不受激光激发的影响。这种结构为同时增强TLs的光电性能提供了一种新的选择。

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InGaAlAs/InP MQW Transistor Lasers Based on Step-Ridge Waveguides

We propose and numerically investigate a new step-ridge-waveguide InGaAlAs/InP multi-quantum well (MQW) transistor laser (TL). The carrier nonradiative recombination centers caused by the exposed deep-ridge waveguide sidewall significantly degrade the optoelectronic performance of the TLs. The step-ridge-waveguide structure guides carriers through the center portion of the ridge waveguide, thereby effectively mitigating the effect of the nonradiative recombination defects. Simulation results show that the optoelectronic characteristics of the step-ridge TL are far better than those of the conventional deep-ridge TL, and the current amplification factor of the step-ridge TL is not affected by the laser excitation. This structure provides a new option for the simultaneous enhancement of the optoelectronic performance of TLs.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.