IEEE Electron Device Letters最新文献_第5页

Concepts of Time-Frequency Structure and Pulse Compression of X-Band Radiation Generated by an Oversized Coaxial Cherenkov Generator

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3527975

Renzhen Xiao;Renjie Cheng;Kun Chen;Yanchao Shi;Xianchen Bai;Junqing Wang;Xinhong Cui

{"title":"Concepts of Time-Frequency Structure and Pulse Compression of X-Band Radiation Generated by an Oversized Coaxial Cherenkov Generator","authors":"Renzhen Xiao;Renjie Cheng;Kun Chen;Yanchao Shi;Xianchen Bai;Junqing Wang;Xinhong Cui","doi":"10.1109/LED.2025.3527975","DOIUrl":"https://doi.org/10.1109/LED.2025.3527975","url":null,"abstract":"New concepts to generate extremely high output power with ultrashort pulse duration are developed. At first, an oversized coaxial Cherenkov generator with a profiled and extended slow wave structure is used to generate a time-frequency-modulated pulse with power of several tens of GW and duration of several nanoseconds. Then this time-frequency-modulated pulse can be compressed into a sub-nanosecond pulse with power exceeding 100 GW via a circular waveguide compressor after mode conversion. As an example, particle-in-cell simulation demonstrates that a pulse is obtained with power of 35 GW, duration of 3.0 ns, and frequency sweeping from 8.9 GHz to 11.0 GHz almost linearly. Injecting this pulse into a circular waveguide as TE<inline-formula> <tex-math>$_{mathbf {{01}}}$ </tex-math></inline-formula> mode, it can be compressed into an ultrashort pulse with power of 168 GW and duration of 0.45 ns. Compared with previous method of producing superradiance pulse directly, the beam-wave interaction in the generator is not so highly unstable, and thus the whole system is more reliable and controllable.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"488-491"},"PeriodicalIF":4.1,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Insight Into the Mechanism of Bipolar Degradation in 4H-SiC MOSFET

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3528065

Yangtao Long;Yuan Chen;Pengkai Wang;Bo Hou;Hu He

引用次数: 0

Integration of Oxidized Silicon- and Hydrogen- Terminated Diamond p-Channels for Normally-Off High-Voltage Diamond Power Devices

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3528120

Yu Fu;Zeyang Ren;Kai Su;Jinfeng Zhang;Ruowei Liu;Yijiang Li;Liaoliang Zhu;Jintao Meng;Peng Qian;Dong Wang;Yue Hao;Hiroshi Kawarada;Jincheng Zhang

{"title":"Integration of Oxidized Silicon- and Hydrogen- Terminated Diamond p-Channels for Normally-Off High-Voltage Diamond Power Devices","authors":"Yu Fu;Zeyang Ren;Kai Su;Jinfeng Zhang;Ruowei Liu;Yijiang Li;Liaoliang Zhu;Jintao Meng;Peng Qian;Dong Wang;Yue Hao;Hiroshi Kawarada;Jincheng Zhang","doi":"10.1109/LED.2025.3528120","DOIUrl":"https://doi.org/10.1109/LED.2025.3528120","url":null,"abstract":"With a dense two-dimensional hole gas (2DHG) p-type conductive layer near the surface, hydrogen- terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown typical normally-on operations and high breakdown voltages (<inline-formula> <tex-math>${V}_{text {BR}}$ </tex-math></inline-formula>). Owing to the high MOS interface quality, the oxidized silicon-terminated (C-Si–O) diamond MOSFETs have featured excellent normally-off characteristics, such as high threshold voltage (<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>). However, the reported C-Si–O diamond MOSFETs were all exhibited an overlapping-gate structure, and therefore couldn’t withstand high voltages. In this work, we demonstrated a novel C-H diamond MOSFET structure with a partial C-Si–O channel to improve the voltage withstand capability of normally-off C-Si–O diamond MOSFETs. The C-H/C-Si–O/C-H channel structure was achieved by forming an entire C-Si–O channel first, and then selectively replacing the C-Si–O channel to the C-H channel by using a SiO2 mask. As a result, for the fabricated device with a C-Si–O channel length of <inline-formula> <tex-math>$2~mu $ </tex-math></inline-formula>m and a gate-to-drain distance (<inline-formula> <tex-math>${L}_{text {GD}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math>$11~mu $ </tex-math></inline-formula>m, <inline-formula> <tex-math>${V}_{text {TH}} = -8.6$ </tex-math></inline-formula> V and OFF-state <inline-formula> <tex-math>${V}_{text {BR}} = -1376$ </tex-math></inline-formula> V have been obtained. These competitive results reveal that the proposed device structure is promising in pushing the normally-off C-Si–O diamond MOSFETs into the high voltage applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"330-333"},"PeriodicalIF":4.1,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of Low-Power Three-Dimensional CMOS Inverters Based on Si p-Tunnel FET and ITO n-FET

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3528045

Anyu Tong;Kaifeng Wang;Qianlan Hu;Zhiyu Wang;Xiong Xiong;Shiwei Yan;Shenwu Zhu;Qijun Li;Yongqin Wu;Ye Ren;Weihai Bu;Qianqian Huang;Yanqing Wu;Ru Huang

引用次数: 0

Improved Stability of Pr-Doped Amorphous InGaZnO₄ Thin-Film Transistors Under Negative Bias Illumination Stress

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3528063

Shujiong Hao;Dongli Zhang;Nannan Lv;Huaisheng Wang;Mingxiang Wang

引用次数: 0

A Multi-Functional VOC Sensor Based on Cascaded Quartz Crystal Resonators

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3528024

Mengyao Fu;Zhiqiang Ma;Chenyang Gao;Yongping Ye;Wei Li;Dibo Hou;Yunqi Cao

引用次数: 0

High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3528003

Zhibo Cheng;Xiangdong Li;Jian Ji;Lu Yu;Tao Zhang;Hongyue Wang;Xi Jiang;Song Yuan;Shuzhen You;Jingjing Chang;Yue Hao;Jincheng Zhang

{"title":"High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion","authors":"Zhibo Cheng;Xiangdong Li;Jian Ji;Lu Yu;Tao Zhang;Hongyue Wang;Xi Jiang;Song Yuan;Shuzhen You;Jingjing Chang;Yue Hao;Jincheng Zhang","doi":"10.1109/LED.2025.3528003","DOIUrl":"https://doi.org/10.1109/LED.2025.3528003","url":null,"abstract":"Schottky-type p-GaN gate HEMTs with a low forward bias gate breakdown voltage <inline-formula> <tex-math>${V}_{text {G- {BD}}}$ </tex-math></inline-formula> are vulnerable to failures during switching. In this work, high-performance MIM/p-GaN gate HEMTs with a TiN/Al2O3/TiN (30/3/40 nm) MIM structure on top of p-GaN layer are proposed. Compared to the conventional Schottky-type reference, the MIM/p-GaN gate structure successfully promotes the <inline-formula> <tex-math>${V}_{text {G- {BD}}}$ </tex-math></inline-formula> from 11.4 to 14.1 V and the maximum applicable gate voltage <inline-formula> <tex-math>${V}_{text {G- {max}}}$ </tex-math></inline-formula> from 5.1 to 7.0 V corresponding to a lifetime of 10 years at the failure of 1%. Benefiting from the 3-nm ultra-thin Al2O3 layer and the MIM structure, trapping effect is avoided. Neither significant degradation of static nor dynamic characteristics of the proposed devices are observed. The developed MIM/p-GaN gate HEMTs present great potentials for future power conversion applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"460-463"},"PeriodicalIF":4.1,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10836812","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Moderate-Temperature Deposition of 99.9% Semiconducting Carbon Nanotubes for Thin Film Transistors With Good Consistency

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-10 DOI: 10.1109/LED.2025.3527968

Mingyu Liu;Bo Lai;Lele Wu;Sishun Cui;Wendi Wu;Yuanchun Zhao

{"title":"Moderate-Temperature Deposition of 99.9% Semiconducting Carbon Nanotubes for Thin Film Transistors With Good Consistency","authors":"Mingyu Liu;Bo Lai;Lele Wu;Sishun Cui;Wendi Wu;Yuanchun Zhao","doi":"10.1109/LED.2025.3527968","DOIUrl":"https://doi.org/10.1109/LED.2025.3527968","url":null,"abstract":"Carbon nanotube (CNT) networks are considered as promising candidate materials for high-performance thin film transistors. However, the complex network structure usually leads to device-to-device variations among the fabricated CNT field-effect transistors (CNTFETs), and thus impeding their practical applications. In this work, we report the solution-based deposition of CNT networks at a moderate temperature of 60 ° C by using high-purity (99.9%) semiconducting nanotubes, which not only improves the deposition efficiency, but also produces well-controlled network morphology. The resultant CNTFETs exhibit narrow distributions in on/off ratios and subthreshold swings centered at <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> and 2 V/dec (with a 300 nm-thick silicon oxide dielectric layer), respectively, with a mobility of ~20 cm2/Vs. The device performance can be further optimized by using a plasma-generated ultra-thin aluminum oxide gate dielectric layer. In particular, this work underlines the importance of controlling the nanotube bundles in high-purity semiconducting CNT networks, by which the trade-off between carrier mobility and on/off ratio of CNTFETs can be well balanced.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"424-427"},"PeriodicalIF":4.1,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Retina-Inspired Artificial Optoelectronic Neurons With Broad Spectral Response for Visual Image Pre-Processing

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-09 DOI: 10.1109/LED.2024.3525088

Guocheng Zhang;Jianchuan Tang;Binglin Lai;Hongyu Wang;Zili Zeng;Changqiang Su;Xin Yi;Yujie Yan;Huipeng Chen

{"title":"Retina-Inspired Artificial Optoelectronic Neurons With Broad Spectral Response for Visual Image Pre-Processing","authors":"Guocheng Zhang;Jianchuan Tang;Binglin Lai;Hongyu Wang;Zili Zeng;Changqiang Su;Xin Yi;Yujie Yan;Huipeng Chen","doi":"10.1109/LED.2024.3525088","DOIUrl":"https://doi.org/10.1109/LED.2024.3525088","url":null,"abstract":"Inspired by the human retina, the development of neuromorphic vision systems featuring image perception, memory, and processing functions aims to address the limitations of traditional artificial vision systems concerning circuit simplification, device integration, and power consumption. The narrow spectral response of optoelectronic neurons, an important hardware basis for neuromorphic vision systems, limits their application in broad-spectrum artificial visual perception. In this study, we present an artificial optoelectronic neuron that demonstrates broadband sensing capabilities with a response range encompassing ultraviolet, visible, and near-infrared regions. Furthermore, we have designed a <inline-formula> <tex-math>$64times 64$ </tex-math></inline-formula> array of optoelectronic neurons capable of effectively simulating the light perception and image pre-processing functions (enhance image contrast), of the retina. This work is important for improving image processing efficiency and realizing neuromorphic vision systems with broadband perception.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"401-404"},"PeriodicalIF":4.1,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reduced Dark-Current, Rise-Time, and On-State Delay of Avalanche GaAs Photoconductive Semiconductor Switches by Annealing-Grinding Process

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-09 DOI: 10.1109/LED.2025.3527980

Yingxiang Yang;Long Hu;Xianghong Yang;Jiahui Fu;Zhangjie Zhu;Mingchao Yang;Xin Li;Li Ni;Yang Zhou;Li Geng

{"title":"Reduced Dark-Current, Rise-Time, and On-State Delay of Avalanche GaAs Photoconductive Semiconductor Switches by Annealing-Grinding Process","authors":"Yingxiang Yang;Long Hu;Xianghong Yang;Jiahui Fu;Zhangjie Zhu;Mingchao Yang;Xin Li;Li Ni;Yang Zhou;Li Geng","doi":"10.1109/LED.2025.3527980","DOIUrl":"https://doi.org/10.1109/LED.2025.3527980","url":null,"abstract":"In this letter, the performance of avalanche Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) aimed at DC charging and fiber-triggered high-voltage switches (HVS) applications is reported. The optimal annealing condition suitable for the device is shown to be 250 °C for 30 min by studying the effects of different annealing conditions on the dark-state leakage current of the PCSS. Based on this, a novel annealing-grinding (AG) process is proposed to improve the electrical characteristics of GaAs PCSS. With an electrode gap of 10 mm and a bias voltage of 40 kV, the leakage currents of A-GaAs PCSS, G-GaAs PCSS and AG-GaAs PCSS are reduced by 60.6 %, 64 % and 67.8 %, respectively, compared with the literature. Further, the effects of different processes on the electrical pulse output of avalanche GaAs PCSS, such as optoelectronic delay time and rise time, are investigated. The results show that the avalanche GaAs PCSS can operate stably at 50 kV with a rising edge of 1.2 ns and a photoelectric delay time of 23.93 ns.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"373-376"},"PeriodicalIF":4.1,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0