IEEE Electron Device Letters最新文献_第5页

Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device 基于 CsMAFAPbIBr 包晶石的自整流电阻开关特性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-06 DOI: 10.1109/LED.2024.3455372

Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang

{"title":"Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device","authors":"Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang","doi":"10.1109/LED.2024.3455372","DOIUrl":"10.1109/LED.2024.3455372","url":null,"abstract":"Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA\u0000<inline-formula> <tex-math>$_{{0}.{83}}text {)}_{{0}.{95}}$ </tex-math></inline-formula>\u0000Pb(I0.83Br\u0000<inline-formula> <tex-math>$_{{0}.{17}}text {)}_{{3}}$ </tex-math></inline-formula>\u0000 perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for \u0000<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\u0000 cycles and the retention time is over \u0000<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\u0000 seconds at \u0000<inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>\u0000C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA\u0000<inline-formula> <tex-math>$_{{0}.{83}}text {)}_{{0}.{95}}$ </tex-math></inline-formula>\u0000 Pb(I0.83Br\u0000<inline-formula> <tex-math>$_{{0}.{17}}text {)}_{{3}}$ </tex-math></inline-formula>\u0000. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2106-2109"},"PeriodicalIF":4.1,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM 利用 ALD 氧化炉工程高效生产 DRAM 中的氧化锆电容器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-06 DOI: 10.1109/LED.2024.3455338

Xinyi Tang;Yuanbiao Li;Songming Miao;Xiao Chen;Guangwei Xu;Di Lu;Shibing Long

引用次数: 0

High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter 基于共形加载元面滤波器的行波管高阶模式抑制技术

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-06 DOI: 10.1109/LED.2024.3455336

Gaoli Xiang;Zhigang Lu;Peng Gao;Jingrui Duan;Yuan Zheng;Zhanliang Wang;Shaomeng Wang;Huarong Gong;Yubin Gong

引用次数: 0

Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs CMOS 兼容型 FeFET 的多域动力学和终极可扩展性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-05 DOI: 10.1109/LED.2024.3454638

Nilesh Pandey;Yogesh Singh Chauhan;Leonard F. Register;Sanjay K. Banerjee

{"title":"Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs","authors":"Nilesh Pandey;Yogesh Singh Chauhan;Leonard F. Register;Sanjay K. Banerjee","doi":"10.1109/LED.2024.3454638","DOIUrl":"10.1109/LED.2024.3454638","url":null,"abstract":"Recent research on CMOS-compatible FETs aims at aggressive scaling, targeting advanced performance nodes (7 nm - 14 nm), with the ultimate scalability limit posed by direct source-to-drain tunneling (DSDT). This letter investigates the impact of multi-domain dynamics in the ferroelectric gate dielectric on FeFET scalability. Coupled solutions of 2-D Poisson’s equation with the ferroelectric’s 2-D thermodynamics model (depolarizing energy + gradient energy + free energy) are the basis of a phase-field model. Varying ferroelectric and dielectric layer thicknesses can be used to engineer domain density. Minimal DSDT, maximum ON/OFF current ratio, and maximum memory window (MW) are possible when a single domain wall (domain density = 2) is located near the mid-channel. Additional domain walls increase DSDT. Furthermore, the drain electric field shifts the domain wall towards the source, increasing DSDT. Spatial gradient in polarization drastically impacts DSDT, with hard domain walls exhibiting lower DSDT due to increased polarization gradient. Our study predicts an optimal physical gate length of 12 nm (domain density = 2) with I\u0000<inline-formula> <tex-math>$_{textit {ON}}$ </tex-math></inline-formula>\u0000/I\u0000<inline-formula> <tex-math>$_{textit {OFF}}~sim ~{1}times {10} ^{{6}}$ </tex-math></inline-formula>\u0000 and subthreshold slope \u0000<inline-formula> <tex-math>$sim ~100$ </tex-math></inline-formula>\u0000 mV/dec.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2098-2101"},"PeriodicalIF":4.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

γ-Ray-Induced Effects in Al:HfO₂-Based Memristor Devices for Memory and Sensor Applications 用于存储器和传感器应用的基于 Al:HfO2 的晶闸管器件中的γ射线诱导效应

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454294

Om Kumar Prasad;Sridhar Chandrasekaran;Mari Napari;Irwan Purnama;Asep Nugroho;Dimitra G. Georgiadou;Chin-Han Chung;Kow-Ming Chang;Firman M. Simanjuntak

{"title":"γ-Ray-Induced Effects in Al:HfO₂-Based Memristor Devices for Memory and Sensor Applications","authors":"Om Kumar Prasad;Sridhar Chandrasekaran;Mari Napari;Irwan Purnama;Asep Nugroho;Dimitra G. Georgiadou;Chin-Han Chung;Kow-Ming Chang;Firman M. Simanjuntak","doi":"10.1109/LED.2024.3454294","DOIUrl":"10.1109/LED.2024.3454294","url":null,"abstract":"We observe that \u0000<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>\u0000-ray radiation affects the formation of the conducting bridge in Ag/Ti/Al:HfO2/Pt devices. We suggest that the \u0000<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>\u0000-ray breaks Hf-O bonds and affects the properties of metal/insulator interfaces. The radiation-induced interfacial layers promote the transition from write-once-read-many times (WORM) to reversible switching memories. The devices that undergo a higher radiation exposure exhibit a higher forming voltage that we could exploit to sense radiation; an electrical circuit to harness this phenomenon is also proposed. We also observe that the devices exhibit self-healing behavior, where the forming behavior restores once the radiation energy is released. The switching mechanism is explained and proposed to elucidate this phenomenon. This study not only provides insight into the development of memristor devices for space application but also their potential as multipurpose elements for reconfigurable circuits.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2082-2085"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers 实现在 300 毫米晶圆上制造垂直 SOT-MTJ 的高产量

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454609

Wenlong Yang;Zhenghui Ji;Yang Gao;Kaiyuan Zhou;Qijun Guo;Dinggui Zeng;Shasha Wang;Ming Wang;Lijie Shen;Guilin Chen;Yihui Sun;Enlong Liu;Shikun He

{"title":"Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers","authors":"Wenlong Yang;Zhenghui Ji;Yang Gao;Kaiyuan Zhou;Qijun Guo;Dinggui Zeng;Shasha Wang;Ming Wang;Lijie Shen;Guilin Chen;Yihui Sun;Enlong Liu;Shikun He","doi":"10.1109/LED.2024.3454609","DOIUrl":"10.1109/LED.2024.3454609","url":null,"abstract":"The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of \u0000<inline-formula> <tex-math>$680~mu $ </tex-math></inline-formula>\u0000A at 2 ns, a TMR as high as 119%, ultra-high endurance (over \u0000<inline-formula> <tex-math>$10^{{12}}$ </tex-math></inline-formula>\u0000 cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2094-2097"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells 羰基和氰基协同钝化，实现高效叶片涂层包覆型太阳电池

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454522

Xinxin Li;Long Zhou;Qianyu Chen;Yunlong Zhang;Xinyuan Feng;Yuanbo Du;Dazheng Chen;Weidong Zhu;He Xi;Jincheng Zhang;Chunfu Zhang;Yue Hao

{"title":"Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells","authors":"Xinxin Li;Long Zhou;Qianyu Chen;Yunlong Zhang;Xinyuan Feng;Yuanbo Du;Dazheng Chen;Weidong Zhu;He Xi;Jincheng Zhang;Chunfu Zhang;Yue Hao","doi":"10.1109/LED.2024.3454522","DOIUrl":"10.1109/LED.2024.3454522","url":null,"abstract":"Homogeneous and defect-minimized perovskite films are critical for efficient perovskite solar cells (PSCs). Herein, we introduce a small molecule with electron-rich carbonyl and cyano groups in the perovskite films to regulate the crystallization process and passivate defects. The electron-rich carbonyl and cyano groups of the FDP molecules could coordinate with Pb\u0000<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\u0000 dangling bonds and reduce the density of VPb. The synergistic effect of crystallization modulation and defect passivation could significantly improve film quality and suppress carrier nonradiative recombination. As a result, the champion devices realize an increased efficiency of 23.39% for small areas (0.08 cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000 and a high efficiency of 20.69% for larger areas (1 cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000. The inverted perovskite modules with an aperture area of 45 cm2 obtain a champion efficiency of 20.38%, indicating a teeny efficiency loss of 1.5% from 1 to 45 cm2. These findings provide an innovative avenue to achieve high-efficiency perovskite modules and facilitate the commercialization of large-area PSCs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2162-2165"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide 基于亚太赫兹波段 V 形正交光栅波导的新型双板束后向波振荡器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454508

Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He

{"title":"A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide","authors":"Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He","doi":"10.1109/LED.2024.3454508","DOIUrl":"10.1109/LED.2024.3454508","url":null,"abstract":"A sub-terahertz band dual-sheet-beam backward wave oscillator (BWO) highlighted with wide tunable bandwidth and enhanced radiation power is presented in this letter. This design includes two key innovations: 1) a novel V-shaped orthogonal grating waveguide (VOGW) operating in TM\u0000<inline-formula> <tex-math>$_{{21}}^{text {++}}$ </tex-math></inline-formula>\u0000 high-order mode (++ represents the electric field vectors within two beam tunnel regions are in-phase) is proposed, which exhibits higher coupling impedance compared with the traditional OGW; 2) a novel E-plane L-bend overmoded coupler with a tapered transition is designed for efficient power extraction of the TM\u0000<inline-formula> <tex-math>$_{{21}}^{text {++}}$ </tex-math></inline-formula>\u0000 mode. For verification, an interaction circuit made of 40-period VOGW and two identical couplers was fabricated, and the measured results agreed well with simulation predictions having considered conduct loss and assembly errors. PIC simulation for this innovative BWO predicts a stable radiation power of 182.4-317.5 W across 246.8-265.6 GHz, demonstrating a power increment of up to 43 W (~15%) in comparison to the OGW based BWO.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2201-2204"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure 基于拉什巴自旋轨道耦合调制层状半导体量子微结构的空间电子-自旋分离器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454235

Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang

引用次数: 0

Mechanically Tunable Broadband Electric Field Enhancement Resonator for Quantum Microwave Measurements 用于量子微波测量的机械可调谐宽带电场增强谐振器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454356

Zhiqian Wan;Yi Lin;Kai Yang;Yunqi Fu

引用次数: 0