IEEE Electron Device Letters最新文献

{"title":"Interface Properties Improvement and VFB Modulation on HfO₂/IL/Si₀.₇Ge₀.₃ Gate Stacks Using LaFMD Passivation Without EOT Compensation","authors":"Xiaotong Mao;Yongliang Li;Yu Zhou;Xiaofeng Jia;Shuai Yang;Fei Zhao;Haoyan Liu;Longyu Sun;Shengkai Wang;Jianfeng Gao;Xiaolei Wang;Wenwu Wang","doi":"10.1109/LED.2025.3562628","DOIUrl":"https://doi.org/10.1109/LED.2025.3562628","url":null,"abstract":"The interface properties improvement and flat band voltage (VFB) modulation of HfO2/IL/Si0.7 Ge0.3 gate stacks using a novel La(iPr2-FMD)3 (LaFMD) passivation technique without equivalent oxide thickness (EOT) compensation is investigated for the first time. The optimized sample under 5 cycles of LaFMD passivation reduces the interface state density (Dit) from <inline-formula> <tex-math>${4}.{11}times {10}^{{12}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${mathrm {eV}}^{-{1}}~cdot $ </tex-math></inline-formula>cm-2 to <inline-formula> <tex-math>${7}.{43}times {10}^{{11}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${mathrm {eV}}^{-{1}}~cdot $ </tex-math></inline-formula>cm-2, while achieving the VFB modulation of 330 mV and EOT fluctuation of only 0.01nm. This is attributed to LaFMD passivation promoting the formation of GeO2 and La-O bonds in the interfacial layer and inhibiting the generation of GeO. Additionally, compared with La2O3 treatment, LaFMD passivation strategy also exhibits superior Dit and VFB modulation capability at smaller EOT. As a result, it is a promising technology for the stacked SiGe channel GAA transistor in the future.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1039-1042"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a Glassblown Micro-Hemispherical Shell Resonator With a Co-Fabricated Electrical Actuation Mechanism","authors":"Wenqiang Wei;Rang Cui;Qi Cai;Renxin Wang;Huiliang Cao","doi":"10.1109/LED.2025.3562657","DOIUrl":"https://doi.org/10.1109/LED.2025.3562657","url":null,"abstract":"This letter presents a glassblown micro-hemispherical shell resonator (<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> HSR), consisting of a micro-hemispherical shell and a ring-shaped electrode. The blow-molding process is employed to enable the simultaneous fabrication of the electrode and the resonator shell, thereby eliminating assembly errors inherent in traditional discrete assembly methods. Additionally, an innovative S-shaped metal lead is introduced to prevent metal tearing. The experimental results indicate that the surface roughness of the resonator is measured at only 0.217 nm. The resonant frequencies of the drive mode and sense mode are 3.4876 MHz and 3.4891 MHz respectively. Additionally, the Q factor in a 1 Pa vacuum environment is approximately 200 times greater than that at atmospheric pressure. This study offers a novel approach for advancing research on <inline-formula> <tex-math>$mu $ </tex-math></inline-formula> HSRs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1199-1202"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Simple Non-Doped Donor/Acceptor Quaternary Exciplex System for Enhanced Triplet Exciton Utilization","authors":"Jiachen Kang;Di An;Wenzhe Huang;Zixiang Xia;Yu Zhao;Gufeng He","doi":"10.1109/LED.2025.3562582","DOIUrl":"https://doi.org/10.1109/LED.2025.3562582","url":null,"abstract":"The interface exciplex does not require precise doping process and exhibits higher efficiency than conventional fluorescent emitter. The utilization of triplet excitons has been identified as a critical factor in achieving high-efficiency luminescence in such systems. Here, a simple interface structure with conventional transport materials for facilitate utilization of exciton and energy transfer can be constructed by inserting ultrathin layers between the interface exciplex. This strategy dispenses with precise doping process and fluorescent guest to form a quaternary exciplex at interface to constructing energy trasnfer between the exciplexes. The optimized quaternary exciplex device achieves an external quantum efficiency (EQE) of 13.4% and a current efficiency (CE) of 34.3 cd/A, exceeding the performance of individual exciplex devices. The photoluminescence quantum yields (PLQYs) rising from 28.7% to 52.7% and the reverse intersystem crossing (RISC) rate is enhanced from <inline-formula> <tex-math>${1}.{5}times {10}^{{5}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>${2}.{2}times {10}^{{5}~}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {s}}^{-{1}}$ </tex-math></inline-formula> after inserting ultrathin layers. These improvements are attributed to the presence of multiple energy transfer and RISC channels, which accelerate the consumption of singlet exciton and facilitate triplet exciton upconversion to singlet for rising the utilization of triplet exciton. This study presents a new method to efficiently utilize triplet excitons for high-efficiency interface exciplex organic light-emitting diodes (OLEDs).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1187-1190"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Accelerating Photo-Response of InZnO TFTs via Field Modulation Under Dual-Gate Bias","authors":"Tengyan Huang;Yuhan Zhang;Jiye Li;Yuhang Zhang;Lei Lu;Hang Zhou;Shengdong Zhang","doi":"10.1109/LED.2025.3562554","DOIUrl":"https://doi.org/10.1109/LED.2025.3562554","url":null,"abstract":"Oxide-based photo thin-film transistors (TFTs) usually exhibit high photo-responsivity but suffer from slow dynamic photo-response. In this work, the accelerated photo-response in InZnO TFTs under dual-gate bias is demonstrated by biasing the bottom-gate close to turn-on voltage and using a thick bottom-gate insulator. The acceleration is attributed to the reduction of the vertical electrical field across the channel layer, which facilitates the recombination of ionized oxygen vacancies (<inline-formula> <tex-math>${V}_{text {O}}^{{2}+}$ </tex-math></inline-formula>) with photo-generated electrons. As a result, a record-fast photocurrent rise time of about <inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>s is achieved under 409 nm illumination at an intensity of 2 mW/cm2.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1123-1126"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Temperature and Solution-Processed Preparation of NiOx/InGaZnO Heterostructure for UV Photodetector","authors":"Xiaoyan Li;Yubin Hu;Nan Jiang;Fangjun Wang;Xiaosheng Liu;Lei Liao;Wei Hu","doi":"10.1109/LED.2025.3562954","DOIUrl":"https://doi.org/10.1109/LED.2025.3562954","url":null,"abstract":"Remarkable progress has been achieved in InGaZnO (IGZO) films for thin film transistors. Preserving comparable performance in optoelectronic applications as in electronic applications is challenging. The study introduces a low-temperature and solution-processed method to construct an IGZO-based heterostructure photodetector. A nickel oxide (NiO<inline-formula> <tex-math>${}_{x}text {)}$ </tex-math></inline-formula> film was patterned on the IGZO as a buffer layer, and a compact interface was formed after annealing at a temperature of <inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C. The photo-response of the detector were characterized. The results suggest that the photocurrents and performances of the devices are promoted. Under the incident light of 254 nm, the highest photo-to-dark current ratio (PDCR) of <inline-formula> <tex-math>$10^{{5}}$ </tex-math></inline-formula> is obtained. The devices possess a responsivity of 0.9 A/W and detectivity of <inline-formula> <tex-math>$10^{{11}}$ </tex-math></inline-formula> Jones. Moreover, the detector shows decent flexibility and long-term stability. It maintains the initial value after operating for 30 days without encapsulation. This work provides an approach to fabricating high-performance and flexible IGZO-based optoelectronic devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1067-1070"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable Bragg Grating Filters Using UV-Written Au-MOFs/SU-8 Waveguide Based on All-Optical Modulating Technique","authors":"Anqi Cui;Huayue Zhao;Xiaoya Miao;Xiangyi Sun;Fangjie Sun;Daming Zhang;Teng Fei;Changming Chen","doi":"10.1109/LED.2025.3562661","DOIUrl":"https://doi.org/10.1109/LED.2025.3562661","url":null,"abstract":"In this work, all-optical Bragg grating filters using Au-MOFs/SU-8 waveguides are achieved based on photothermal effect. This featured loading and network structure of Au-MOFs/SU-8 could effectively suppress the clustering to Au nanoparticles. The device is achieved by directly UV-written technique. 532 nm wavelength and C-band are defined as pumping and signal light, respectively. For the all-optical chip without polishing, the insertion loss is -12.5 dB, the extinction ratio is larger than 25 dB, the tunable sensitivity is 25.25 nm/mW, the rising and falling time are measured as 455 and <inline-formula> <tex-math>$857~mu $ </tex-math></inline-formula>s, respectively. The all-optical waveguide Bragg grating filters proposed are potential for realizing large-scale all-optical on-chip signal processing application.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1191-1194"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Artificial Neural Network-Based Screening Method for Short-Circuit Withstand Time in Packaged SiC MOSFETs to Enhance Device Consistency","authors":"Hengyu Yu;Monikuntala Bhattacharya;Michael Jin;Limeng Shi;Shiva Houshmand;Atsushi Shimbori;Marvin H. White;Anant K. Agarwal","doi":"10.1109/LED.2025.3562694","DOIUrl":"https://doi.org/10.1109/LED.2025.3562694","url":null,"abstract":"Developing an effective methodology to enhance the uniformity of short-circuit withstand time (SCWT) in silicon carbide (SiC) MOSFETs is crucial for ensuring device reliability and consistency in power electronic systems. This letter presents a detailed analysis of SCWT variations caused by inevitable process-induced deviations and introduces a new screening approach based on artificial neural network (ANN) technology. A two-hidden-layer ANN model is constructed using characteristic parameters extracted from SiC MOSFETs. The trained model accurately predicts the SCWT of TCAD-simulated SiC MOSFETs, achieving a maximum error of less than 15% and an average error of only 2%. This proposed method effectively identifies and removes devices with shorter SCWT without compromising the performance of reliable devices, thereby enhancing post-fabrication consistency for packaged devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1179-1182"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband Photodetector Based on In2S3/InAs/In2S3 Heterostructure for Artificial Vision","authors":"Lingchen Liu;Zhexin Li;Yiqiang Zheng;Wenxuan Zhang;Bowen Zhong;Hailong Wang;Yanmeng Shi;Yuqing Huang;Jing Zhang;Leilei Gu;Yongchao Yu;Zheng Lou;Lili Wang","doi":"10.1109/LED.2025.3562658","DOIUrl":"https://doi.org/10.1109/LED.2025.3562658","url":null,"abstract":"As biomimetic neuromorphic computing gains increasing research interest, optoelectronic synapses have emerged as particularly noteworthy due to their ability to perform in-sensor computations. This study presents an optoelectronic synapse array based on In2S3/InAs/In2S3 heterostructure, which can detect and respond across a wide spectral range from ultraviolet (UV) to near-infrared (NIR). These arrays replicate the functionality of biological photoreceptors, offering improved spectral sensitivity and selectivity, which are crucial for artificial vision applications. The In2S3/InAs/In2S3 heterostructure studied demonstrates wide spectral response, synaptic plasticity, low cost, and ease of array integration, highlighting its significant potential for applications in neuromorphic computing and biomimetic vision.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1139-1142"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Yttrium Doped Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10₁₂ Cycles), Long Retention, and Imprint Immune Performance at 4 K","authors":"A. Agarwal;A. M. Walke;N. Ronchi;M. I. Popovici;W. C. Y. Ma;C. J. Su;K. H. Kao;Jan Van Houdt","doi":"10.1109/LED.2025.3562798","DOIUrl":"https://doi.org/10.1109/LED.2025.3562798","url":null,"abstract":"This work demonstrates the first electrical characterization of yttrium-doped <inline-formula> <tex-math>${mathrm {Hf}}_{mathbf {{0}.{5}}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${mathrm {Zr}}_{mathbf {{0}.{5}}}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula>-based ferroelectric capacitors (Y-HZO caps) at cryogenic temperatures down to 4 K, highlighting their superior endurance and reliability. Owing to a decrease in oxygen vacancy (O-vacancy) distribution and less domain pinning (due to reduced trapping) at cryogenic temperatures, the fast pulse characterization reveals 2Pr <inline-formula> <tex-math>$sim ~20~mu $ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {C/cm}}^{mathbf {{2}}}$ </tex-math></inline-formula> of Y-HZO caps at 4 K, showing >33% improvement compared to results at 300 K. Notably, the Y-HZO caps show fatigue-free endurance up to <inline-formula> <tex-math>$10^{mathbf {{12}}}$ </tex-math></inline-formula> cycles at 4 K, while undoped <inline-formula> <tex-math>${mathrm {Hf}}_{mathbf {{0}.{5}}}$ </tex-math></inline-formula><inline-formula> <tex-math>${mathrm {Zr}}_{mathbf {{0}.{5}}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${mathrm {O}}_{mathbf {{2}}}$ </tex-math></inline-formula> ferroelectric capacitors (HZO caps) exhibit slight fatigue. Both capacitors (caps) show imprint immunity an long retention (<inline-formula> <tex-math>$gt 10^{mathbf {{5}}}$ </tex-math></inline-formula>s). A key observation is that while HZO caps do not require wake-up at 4 K, Y-HZO caps show an anti-ferroelectric behavior, implying wake-up operation cannot be performed in Y-HZO caps at 4 K. The Y-HZO caps must be woken up at 300 K before further electrical analysis at 4 K. These findings point towards the reduced mobility of charged defects and O-vacancies significantly suppressing the domain de-pinning process at 4 K, which plays an essential part in the wake-up and fatigue of these ferroelectric capacitors. The time-dependent dielectric break- down (TDDB) analysis also points towards improved reliability of both the caps at 4 K. These improved characteristics and reliability of Y-HZO caps make them an attractive choice for cryogenic memory applications like quantum and neuromorphic computing.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1095-1098"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bias-Tuned Selective Spectral Response High-Performance Ga₂O₃/GaN Heterojunction Ultraviolet Photodetector","authors":"Yurui Han;Yuefei Wang;Shihao Fu;Chong Gao;Zhe Wu;Weizhe Cui;Bingsheng Li;Aidong Shen;Yichun Liu","doi":"10.1109/LED.2025.3562580","DOIUrl":"https://doi.org/10.1109/LED.2025.3562580","url":null,"abstract":"<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 films were successfully fabricated using the GaN thermal oxidation method, and Ga2O3/GaN heterojunction ultraviolet photodetectors were constructed with varying electrode parameters, including length, width, and electrode spacing. Under optimized electrode parameters, the detector demonstrates an exceptionally low dark current, with a value of just 63.2 fA at a 10V bias. Under <inline-formula> <tex-math>$33~mu $ </tex-math></inline-formula>W/cm2 ultraviolet light illumination, the detector demonstrates a high light-to-dark current ratio exceeding 106. By adjusting the thickness of the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 light-absorbing layer to enhance ultraviolet light absorption and reduce carrier recombination, the detector achieves a responsivity of up to 3061 A/W and a detectivity exceeding <inline-formula> <tex-math>$10^{{15}}$ </tex-math></inline-formula> Jones. Additionally, by tuning the applied bias, the detector enables adjustable control over both the solar-blind ultraviolet single-band and solar-blind-near ultraviolet dual-band response spectra. These research findings provide important theoretical support and experimental basis for the optimized design and application of high-performance ultraviolet photodetectors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1083-1086"},"PeriodicalIF":4.1,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}