双栅偏压下场调制加速InZnO tft的光响应

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-21 DOI:10.1109/LED.2025.3562554

Tengyan Huang;Yuhan Zhang;Jiye Li;Yuhang Zhang;Lei Lu;Hang Zhou;Shengdong Zhang

{"title":"双栅偏压下场调制加速InZnO tft的光响应","authors":"Tengyan Huang;Yuhan Zhang;Jiye Li;Yuhang Zhang;Lei Lu;Hang Zhou;Shengdong Zhang","doi":"10.1109/LED.2025.3562554","DOIUrl":null,"url":null,"abstract":"Oxide-based photo thin-film transistors (TFTs) usually exhibit high photo-responsivity but suffer from slow dynamic photo-response. In this work, the accelerated photo-response in InZnO TFTs under dual-gate bias is demonstrated by biasing the bottom-gate close to turn-on voltage and using a thick bottom-gate insulator. The acceleration is attributed to the reduction of the vertical electrical field across the channel layer, which facilitates the recombination of ionized oxygen vacancies (<inline-formula> <tex-math>${V}_{\\text {O}}^{{2}+}$ </tex-math></inline-formula>) with photo-generated electrons. As a result, a record-fast photocurrent rise time of about <inline-formula> <tex-math>$10~\\mu $ </tex-math></inline-formula>s is achieved under 409 nm illumination at an intensity of 2 mW/cm2.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1123-1126"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Accelerating Photo-Response of InZnO TFTs via Field Modulation Under Dual-Gate Bias\",\"authors\":\"Tengyan Huang;Yuhan Zhang;Jiye Li;Yuhang Zhang;Lei Lu;Hang Zhou;Shengdong Zhang\",\"doi\":\"10.1109/LED.2025.3562554\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Oxide-based photo thin-film transistors (TFTs) usually exhibit high photo-responsivity but suffer from slow dynamic photo-response. In this work, the accelerated photo-response in InZnO TFTs under dual-gate bias is demonstrated by biasing the bottom-gate close to turn-on voltage and using a thick bottom-gate insulator. The acceleration is attributed to the reduction of the vertical electrical field across the channel layer, which facilitates the recombination of ionized oxygen vacancies (<inline-formula> <tex-math>${V}_{\\\\text {O}}^{{2}+}$ </tex-math></inline-formula>) with photo-generated electrons. As a result, a record-fast photocurrent rise time of about <inline-formula> <tex-math>$10~\\\\mu $ </tex-math></inline-formula>s is achieved under 409 nm illumination at an intensity of 2 mW/cm2.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"46 7\",\"pages\":\"1123-1126\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2025-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10971208/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10971208/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

基于氧化物的光电薄膜晶体管（TFTs）通常具有较高的光响应率，但存在动态光响应缓慢的问题。在这项工作中，通过将底栅偏置到接近导通电压并使用厚底栅绝缘体，证明了在双栅极偏置下InZnO TFTs中的加速光响应。加速是由于通道层垂直电场的减小，这有利于电离氧空位（${V}_{\text {O}}^{{2}+}$）与光产生的电子的重组。结果表明，在409 nm光照强度为2 mW/cm2的情况下，光电流上升时间达到了创纪录的10~\mu $ s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Accelerating Photo-Response of InZnO TFTs via Field Modulation Under Dual-Gate Bias

Oxide-based photo thin-film transistors (TFTs) usually exhibit high photo-responsivity but suffer from slow dynamic photo-response. In this work, the accelerated photo-response in InZnO TFTs under dual-gate bias is demonstrated by biasing the bottom-gate close to turn-on voltage and using a thick bottom-gate insulator. The acceleration is attributed to the reduction of the vertical electrical field across the channel layer, which facilitates the recombination of ionized oxygen vacancies (

${V}_{\text {O}}^{{2}+}$

) with photo-generated electrons. As a result, a record-fast photocurrent rise time of about

$10~\mu $

s is achieved under 409 nm illumination at an intensity of 2 mW/cm2.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.