基于In2S3/InAs/In2S3异质结构的人工视觉宽带光电探测器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-21 DOI:10.1109/LED.2025.3562658

Lingchen Liu;Zhexin Li;Yiqiang Zheng;Wenxuan Zhang;Bowen Zhong;Hailong Wang;Yanmeng Shi;Yuqing Huang;Jing Zhang;Leilei Gu;Yongchao Yu;Zheng Lou;Lili Wang

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引用次数: 0

摘要

随着仿生神经形态计算获得越来越多的研究兴趣，光电突触因其执行传感器内计算的能力而特别值得注意。本研究提出了一种基于In2S3/InAs/In2S3异质结构的光电突触阵列，该阵列可以在从紫外（UV）到近红外（NIR）的宽光谱范围内检测和响应。这些阵列复制了生物光感受器的功能，提供了更高的光谱灵敏度和选择性，这对人工视觉应用至关重要。所研究的In2S3/InAs/In2S3异质结构具有宽光谱响应、突触可塑性、低成本和易于阵列集成等特点，在神经形态计算和仿生视觉方面具有重要的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Broadband Photodetector Based on In2S3/InAs/In2S3 Heterostructure for Artificial Vision

As biomimetic neuromorphic computing gains increasing research interest, optoelectronic synapses have emerged as particularly noteworthy due to their ability to perform in-sensor computations. This study presents an optoelectronic synapse array based on In2S3/InAs/In2S3 heterostructure, which can detect and respond across a wide spectral range from ultraviolet (UV) to near-infrared (NIR). These arrays replicate the functionality of biological photoreceptors, offering improved spectral sensitivity and selectivity, which are crucial for artificial vision applications. The In2S3/InAs/In2S3 heterostructure studied demonstrates wide spectral response, synaptic plasticity, low cost, and ease of array integration, highlighting its significant potential for applications in neuromorphic computing and biomimetic vision.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.