Jiachen Kang;Di An;Wenzhe Huang;Zixiang Xia;Yu Zhao;Gufeng He
{"title":"一种简单的非掺杂供体/受体四元激子复合物体系提高三重激子利用率","authors":"Jiachen Kang;Di An;Wenzhe Huang;Zixiang Xia;Yu Zhao;Gufeng He","doi":"10.1109/LED.2025.3562582","DOIUrl":null,"url":null,"abstract":"The interface exciplex does not require precise doping process and exhibits higher efficiency than conventional fluorescent emitter. The utilization of triplet excitons has been identified as a critical factor in achieving high-efficiency luminescence in such systems. Here, a simple interface structure with conventional transport materials for facilitate utilization of exciton and energy transfer can be constructed by inserting ultrathin layers between the interface exciplex. This strategy dispenses with precise doping process and fluorescent guest to form a quaternary exciplex at interface to constructing energy trasnfer between the exciplexes. The optimized quaternary exciplex device achieves an external quantum efficiency (EQE) of 13.4% and a current efficiency (CE) of 34.3 cd/A, exceeding the performance of individual exciplex devices. The photoluminescence quantum yields (PLQYs) rising from 28.7% to 52.7% and the reverse intersystem crossing (RISC) rate is enhanced from <inline-formula> <tex-math>${1}.{5}\\times {10}^{{5}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>${2}.{2}\\times {10}^{{5}~}$ </tex-math></inline-formula><inline-formula> <tex-math>${\\mathrm {s}}^{-{1}}$ </tex-math></inline-formula> after inserting ultrathin layers. These improvements are attributed to the presence of multiple energy transfer and RISC channels, which accelerate the consumption of singlet exciton and facilitate triplet exciton upconversion to singlet for rising the utilization of triplet exciton. This study presents a new method to efficiently utilize triplet excitons for high-efficiency interface exciplex organic light-emitting diodes (OLEDs).","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1187-1190"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Simple Non-Doped Donor/Acceptor Quaternary Exciplex System for Enhanced Triplet Exciton Utilization\",\"authors\":\"Jiachen Kang;Di An;Wenzhe Huang;Zixiang Xia;Yu Zhao;Gufeng He\",\"doi\":\"10.1109/LED.2025.3562582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The interface exciplex does not require precise doping process and exhibits higher efficiency than conventional fluorescent emitter. The utilization of triplet excitons has been identified as a critical factor in achieving high-efficiency luminescence in such systems. Here, a simple interface structure with conventional transport materials for facilitate utilization of exciton and energy transfer can be constructed by inserting ultrathin layers between the interface exciplex. This strategy dispenses with precise doping process and fluorescent guest to form a quaternary exciplex at interface to constructing energy trasnfer between the exciplexes. The optimized quaternary exciplex device achieves an external quantum efficiency (EQE) of 13.4% and a current efficiency (CE) of 34.3 cd/A, exceeding the performance of individual exciplex devices. The photoluminescence quantum yields (PLQYs) rising from 28.7% to 52.7% and the reverse intersystem crossing (RISC) rate is enhanced from <inline-formula> <tex-math>${1}.{5}\\\\times {10}^{{5}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>${2}.{2}\\\\times {10}^{{5}~}$ </tex-math></inline-formula><inline-formula> <tex-math>${\\\\mathrm {s}}^{-{1}}$ </tex-math></inline-formula> after inserting ultrathin layers. These improvements are attributed to the presence of multiple energy transfer and RISC channels, which accelerate the consumption of singlet exciton and facilitate triplet exciton upconversion to singlet for rising the utilization of triplet exciton. This study presents a new method to efficiently utilize triplet excitons for high-efficiency interface exciplex organic light-emitting diodes (OLEDs).\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"46 7\",\"pages\":\"1187-1190\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2025-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10971416/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10971416/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Simple Non-Doped Donor/Acceptor Quaternary Exciplex System for Enhanced Triplet Exciton Utilization
The interface exciplex does not require precise doping process and exhibits higher efficiency than conventional fluorescent emitter. The utilization of triplet excitons has been identified as a critical factor in achieving high-efficiency luminescence in such systems. Here, a simple interface structure with conventional transport materials for facilitate utilization of exciton and energy transfer can be constructed by inserting ultrathin layers between the interface exciplex. This strategy dispenses with precise doping process and fluorescent guest to form a quaternary exciplex at interface to constructing energy trasnfer between the exciplexes. The optimized quaternary exciplex device achieves an external quantum efficiency (EQE) of 13.4% and a current efficiency (CE) of 34.3 cd/A, exceeding the performance of individual exciplex devices. The photoluminescence quantum yields (PLQYs) rising from 28.7% to 52.7% and the reverse intersystem crossing (RISC) rate is enhanced from ${1}.{5}\times {10}^{{5}}$ to ${2}.{2}\times {10}^{{5}~}$ ${\mathrm {s}}^{-{1}}$ after inserting ultrathin layers. These improvements are attributed to the presence of multiple energy transfer and RISC channels, which accelerate the consumption of singlet exciton and facilitate triplet exciton upconversion to singlet for rising the utilization of triplet exciton. This study presents a new method to efficiently utilize triplet excitons for high-efficiency interface exciplex organic light-emitting diodes (OLEDs).
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.