Interface Properties Improvement and VFB Modulation on HfO₂/IL/Si₀.₇Ge₀.₃ Gate Stacks Using LaFMD Passivation Without EOT Compensation

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-21 DOI:10.1109/LED.2025.3562628

Xiaotong Mao;Yongliang Li;Yu Zhou;Xiaofeng Jia;Shuai Yang;Fei Zhao;Haoyan Liu;Longyu Sun;Shengkai Wang;Jianfeng Gao;Xiaolei Wang;Wenwu Wang

{"title":"Interface Properties Improvement and VFB Modulation on HfO₂/IL/Si₀.₇Ge₀.₃ Gate Stacks Using LaFMD Passivation Without EOT Compensation","authors":"Xiaotong Mao;Yongliang Li;Yu Zhou;Xiaofeng Jia;Shuai Yang;Fei Zhao;Haoyan Liu;Longyu Sun;Shengkai Wang;Jianfeng Gao;Xiaolei Wang;Wenwu Wang","doi":"10.1109/LED.2025.3562628","DOIUrl":null,"url":null,"abstract":"The interface properties improvement and flat band voltage (VFB) modulation of HfO2/IL/Si0.7 Ge0.3 gate stacks using a novel La(iPr2-FMD)3 (LaFMD) passivation technique without equivalent oxide thickness (EOT) compensation is investigated for the first time. The optimized sample under 5 cycles of LaFMD passivation reduces the interface state density (Dit) from <inline-formula> <tex-math>${4}.{11}\\times {10}^{{12}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${\\mathrm {eV}}^{-{1}}~\\cdot $ </tex-math></inline-formula>cm-2 to <inline-formula> <tex-math>${7}.{43}\\times {10}^{{11}}$ </tex-math></inline-formula> <inline-formula> <tex-math>${\\mathrm {eV}}^{-{1}}~\\cdot $ </tex-math></inline-formula>cm-2, while achieving the VFB modulation of 330 mV and EOT fluctuation of only 0.01nm. This is attributed to LaFMD passivation promoting the formation of GeO2 and La-O bonds in the interfacial layer and inhibiting the generation of GeO. Additionally, compared with La2O3 treatment, LaFMD passivation strategy also exhibits superior Dit and VFB modulation capability at smaller EOT. As a result, it is a promising technology for the stacked SiGe channel GAA transistor in the future.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1039-1042"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10971400/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The interface properties improvement and flat band voltage (VFB) modulation of HfO2/IL/Si0.7 Ge0.3 gate stacks using a novel La(iPr2-FMD)3 (LaFMD) passivation technique without equivalent oxide thickness (EOT) compensation is investigated for the first time. The optimized sample under 5 cycles of LaFMD passivation reduces the interface state density (Dit) from

${4}.{11}\times {10}^{{12}}$

${\mathrm {eV}}^{-{1}}~\cdot $

cm-2 to

${7}.{43}\times {10}^{{11}}$

${\mathrm {eV}}^{-{1}}~\cdot $

cm-2, while achieving the VFB modulation of 330 mV and EOT fluctuation of only 0.01nm. This is attributed to LaFMD passivation promoting the formation of GeO2 and La-O bonds in the interfacial layer and inhibiting the generation of GeO. Additionally, compared with La2O3 treatment, LaFMD passivation strategy also exhibits superior Dit and VFB modulation capability at smaller EOT. As a result, it is a promising technology for the stacked SiGe channel GAA transistor in the future.

查看原文本刊更多论文

HfO₂/IL/Si 0接口性能改进及VFB调制。₇Ge 0。使用无EOT补偿的LaFMD钝化的3栅极堆栈

本文首次研究了不需要等效氧化厚度（EOT）补偿的La(iPr2-FMD)3 （LaFMD）钝化技术对HfO2/IL/Si0.7 Ge0.3栅极堆的界面性能改善和平带电压调制。经过5次LaFMD钝化处理后，优化后的样品界面态密度（Dit）从原来的100万美元降低到100万美元。{11}{10} \倍^ {{12}}$ $ {\ mathrm{电动车}}^ {- {1}}~ \ cdot cm-2美元{7}。{43}\times {10}^{{11}}$ ${\mathrm {eV}}^{-{1}}~\cdot $ cm-2，同时实现330 mV的VFB调制，EOT波动仅为0.01nm。这是由于LaFMD钝化促进了界面层中GeO2和La-O键的形成，抑制了GeO的生成。此外，与La2O3处理相比，LaFMD钝化策略在更小的EOT下也表现出更好的Dit和VFB调制能力。因此，它是一种很有前途的堆叠SiGe通道GAA晶体管技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.