Bio-Inspired Ferroelectric Adaptive Transistors for Intelligent Vision Systems

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-11 DOI:10.1109/LED.2025.3597286

Yongkai Liu;Aolin Yuan;Ruihong Yuan;Pei Liu;Zhe Qu;Kangli Xu;Jiajie Yu;Zhenhai Li;Jialin Meng;Hao Zhu;Qingqing Sun;David Wei Zhang;Tianyu Wang;Lin Chen

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引用次数: 0

Abstract

To address the challenges of low data processing efficiency, spatiotemporal information separation, and high energy consumption in traditional machine vision systems, this work proposes a bio-inspired ferroelectric adaptive transistor based on annealing-free HZO ferroelectric films. The FeTFT achieves the lowest fabrication temperature while demonstrating exceptional performance with a high ON/OFF ratio of

${3}.{8}\times {10} ^{{9}}$

and a large memory window of 2.86 V. The FeTFT exhibits bio-synaptic optoelectronic co-response characteristics and implements biological adaptive functions through dynamic reconfiguration of ferroelectric polarization. By constructing a fire vision system based on the spatiotemporal fusion mechanism, the FeTFT achieves 100% motion direction recognition accuracy and three-level speed classification capability. This research establishes a novel paradigm for developing low-power, dynamically adaptable bio-inspired intelligent vision systems.

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用于智能视觉系统的仿生铁电自适应晶体管

为了解决传统机器视觉系统中数据处理效率低、时空信息分离和高能耗的挑战，本研究提出了一种基于无退火HZO铁电薄膜的仿生铁电自适应晶体管。该器件实现了最低的制造温度，同时表现出优异的性能，具有高达100亿美元的高开/关比。{8}\乘以{10}^{{9}}$和2.86 V的大内存窗口。feft具有生物突触光电共响应特性，并通过铁电极化的动态重构实现生物自适应功能。通过构建基于时空融合机制的火力视觉系统，实现了100%的运动方向识别精度和三级速度分类能力。本研究为开发低功耗、动态适应的生物智能视觉系统建立了一个新的范例。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.