低热预算柔性Hf0.5Zr0.5O2器件的应力增强铁电性能

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-04 DOI:10.1109/LED.2025.3595286

Qimiao Zeng;Wei Wang;Shuo Han;Chuanzhi Liu;Jindong Liu;Yi Sun;Lidan Wang;Hui Xu;Qingjiang Li;Rongrong Cao;Shukai Duan

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引用次数: 0

摘要

低热预算的高性能柔性hfo2基铁电器件是柔性电子系统大规模集成和应用的必要条件。在400℃的低退火温度下，HZO器件的铁电性通过应力效应得到增强。与硅基HZO器件相比，柔性HZO器件具有更高的剩余极化（Pr）值（28.5~\mu $ C/cm2）和更强的续航能力，在1010次循环后，Pr仅下降5.6%。此外，对柔性HZO器件进行了弯曲退火，使其Pr值增加了$31.4~\mu $ C/cm2，矫顽力场（2Ec）降低了2.6 MV/cm。为实现高性能柔性HZO器件提供了有效的技术支持。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stress-Enhanced Ferroelectric Properties in Flexible Hf0.5Zr0.5O2 Devices With Low Thermal Budget

High-performance flexible HfO2-based ferroelectric devices with low thermal budget are essential for the large-scale integration and application of flexible electronic systems. In this work, the ferroelectricity of Hf0.5Zr0.5O2 (HZO) devices under a low annealing temperature of 400°C was enhanced by stress effect. Compared with Si-based HZO devices, flexible HZO devices exhibit a higher remanent polarization (Pr) value of

$28.5~\mu $

C/cm2 and superior endurance, with only a 5.6% degradation in Pr after 1010 cycles. Furthermore, the flexible HZO devices were annealed under bending, resulting in an increased Pr value of

$31.4~\mu $

C/cm2 and a reduced coercive field (2Ec) of 2.6 MV/cm. This work provides effective technical support for achieving high-performance flexible HZO devices.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.