Fully-Tunable Tunnel-Coupled Quantum Dots and Charge Sensing in a Commercial 22 nm FD-SOI Process

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-05 DOI:10.1109/LED.2025.3595384

C. Power;M. Moras;A. Sokolov;C. Rohrbacher;X. Wu;S. V. Amitonov;I. Kriekouki;A. Aprà;P. Giounanlis;M. Asker;M. Harkin;P. Hanos-Puskai;P. Bisiaux;I. Bashir;D. Redmond;D. Leipold;R. B. Staszewski;B. Barry;N. Samkharadze;E. Blokhina

引用次数: 0

Abstract

Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDXTM industrial process. These quantum dots are formed in the device channel between polysilicon gates. We report precise control over inter-dot coupling, bias triangle formation, and single electron box sensing in a commercial process for the first time.

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全可调谐隧道耦合量子点与22nm商用FD-SOI制程中的电荷传感

在工业标准的完全耗尽绝缘体上硅CMOS结构通道中形成的量子点中限制电子或空穴是一种有前途的可扩展量子比特架构方法。在本文中，我们展示了使用GlobalFoundries 22FDXTM工业工艺制造的商用纳米结构的测量结果。这些量子点在多晶硅栅极之间的器件通道中形成。我们首次报道了在商业过程中对点间耦合、偏置三角形形成和单电子盒传感的精确控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.