A High-Density 3-D Capacitor Using Through Glass Via Structure

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-15 DOI:10.1109/LED.2025.3599178

Su-Geun Kim;Sung-Chai Yoo;Jeongwon Oh;Byung-Wook Min;Jong-Min Yook

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引用次数: 0

Abstract

Glass substrates offer excellent properties for high-density package applications due to their low coefficient of thermal expansion, nanometer-scale surface flatness, and minimal dielectric loss. These characteristics make glass substrates well-suited for integrated passive devices. This study presents a high-density 3D via capacitor embedded in a glass substrate. The through-hole glass vias (TGVs) are conformally lined with a TiN/HfO2/TiN stack, using processes that are fully compatible with standard TGV fabrication techniques. The fabricated device exhibited an aspect ratio of 16:1 and achieved a measured capacitance of up to 9.7 nF within a

$275~\mu $

$\times 220~\mu $

m area, corresponding to a capacitance density of 160.33 nF/mm2. Measured electrical performance included an ESR of 237 m

$\Omega $

and a breakdown voltage of 6.31 ± 0.5 V, demonstrating its suitability for decoupling and power integrity applications.

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一种采用玻璃通孔结构的高密度三维电容器

由于其低热膨胀系数、纳米级表面平整度和最小介电损耗，玻璃基板为高密度封装应用提供了优异的性能。这些特性使得玻璃基板非常适合集成无源器件。本研究提出了一种嵌入在玻璃基板中的高密度3D通孔电容器。通孔玻璃通孔（TGV）采用与标准TGV制造技术完全兼容的工艺，与TiN/HfO2/TiN堆栈共形排列。该器件的宽高比为16:1，在$275~\mu $ m $\times 220~\mu $ m区域内的测量电容高达9.7 nF，对应的电容密度为160.33 nF/mm2。测量的电气性能包括237 m的ESR $\Omega $和6.31±0.5 V的击穿电压，证明其适合去耦和电源完整性应用。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.