Study of an Ultra-Wideband Sine-Shape Staggered Waveguide for a Terahertz Band Sheet Beam TWT

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-14 DOI:10.1109/LED.2025.3598920

Jiacai Liao;Guoxiang Shu;Xinqiang Li;Binbin Shi;Shengtao Hong;Longshen Huang;Cunjun Ruan;Wenlong He

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引用次数: 0

Abstract

A novel slow wave structure (SWS) featuring an innovative sine-shape staggered waveguide (SSW) and dual-mode operation has been developed for ultra-wideband sheet beam travelling wave tubes. In contrast to the double-staggered grating SWS, the SSW SWS is equivalent to reducing the grating height, enabling the broadening of the operational bandwidth while maintaining interaction impedance characteristics. Numerical simulations demonstrate exceptional broadband characteristics with

${S}_{{11}}$

below -15.3 dB and

${S}_{{21}}$

exceeding -8.5 dB across 237-324 GHz (87 GHz), achieving 31.0% fractional bandwidth. Cold-test results are consistent with the simulation results having considered fabrication tolerances, electromagnetic leakage, and surface roughness effects. PIC simulations predict good performance, achieving 65.0 W output power over a 76 GHz bandwidth (236-312 GHz, 27.8% fractional bandwidth), with a peak output power of 253.0 W at 250 GHz.

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太赫兹带片束行波管超宽带正弦交错波导的研究

研究了一种新型慢波结构（SWS），该结构具有创新的正弦交错波导（SSW）和双模工作模式，用于超宽带片束行波管。与双交错光栅SWS相比，SSW SWS相当于降低了光栅高度，在保持相互作用阻抗特性的同时，实现了工作带宽的展宽。数值模拟表明，在237-324 GHz （87 GHz）范围内，${S}_{{11}}$低于-15.3 dB, ${S}_{{11}}$超过-8.5 dB，达到31.0%的分数带宽。冷试验结果与考虑了制造公差、电磁泄漏和表面粗糙度影响的模拟结果一致。PIC模拟预测了良好的性能，在76 GHz带宽（236-312 GHz， 27.8%的分数带宽）下实现65.0 W输出功率，在250 GHz时峰值输出功率为253.0 W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.