HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-21 DOI:10.1109/LED.2025.3601394

Jinzhu Li;Yanming Liu;Ziyu Liu;He Tian;Yabin Sun;David Wei Zhang

引用次数: 0

Abstract

A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO2 and SiO2 using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO2 -SiO2 interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.

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高密度三维集成器件中HfO₂-SiO₂杂化键合技术的应用

提出了一种用于三维忆阻器集成的HfO2 -SiO2杂化键合技术，并对键合机理进行了深入研究。该键合方法主要包括三个步骤：1)采用Ar等离子体和3%氨水溶液对HfO2与SiO2的键合界面进行表面处理，增加了键合表面的羟基密度；2)在100℃大气环境下预键，去除HfO2 -SiO2界面悬浮羟基上的水分子；3) 400℃下5秒激光快速退火工艺（LRAP），进一步加强在键合界面处形成的Hf-O-Si化学键的键合强度。该技术使新型3D记忆电阻器的成功制造成为可能。此外，这项工作为下一代3D架构设备提供了创新的设计策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.