Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong
{"title":"1THz低损耗宽带药盒窗口操作的研究","authors":"Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong","doi":"10.1109/LED.2025.3598843","DOIUrl":null,"url":null,"abstract":"A low-loss broadband pill-box window for Terahertz (THz) Vacuum Electron Devices (VEDs) is proposed in this letter. To enlarge the THz vacuum window geometric size benefiting the fabrication process, a novel strong coupling over-mode operation has been proposed and employed without introducing extra oscillation points over a broad operation band. At the same time, the monocrystalline diamond (MD) layer is used to withstand stresses during the brazing process as well as the atmospheric pressure. The window frames use an Oxygen Free Copper (OFC) - Kovar heterogeneous integrated structure, ensuring both vacuum tightness and low-loss transmission. The fabricated device demonstrated exceptional vacuum tightness, with a measured leak rate of <inline-formula> <tex-math>${6}.{95}\\times {10}^{\\text {-10}}$ </tex-math></inline-formula> Pa<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>m3/s. The cold test result of the sealed THz MD window demonstrates a recorded low insertion loss (−3.67 dB) at 1 THz, and a 70 GHz bandwidth (0.960 THz – 1.030 THz). The cold test measurements closely match simulation predictions, validating the effectiveness of the strong coupling design in suppressing oscillatory points and the heterogeneous integrated structure in reducing the transmission loss.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 10","pages":"1861-1864"},"PeriodicalIF":4.5000,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of a Low-Loss Broadband Pill-Box Window Operation Over 1THz\",\"authors\":\"Zhiyu Chen;Yuan Zheng;Jingrui Duan;Zhihua Xing;Chong Guo;Liangcheng Yi;Yubin Gong\",\"doi\":\"10.1109/LED.2025.3598843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-loss broadband pill-box window for Terahertz (THz) Vacuum Electron Devices (VEDs) is proposed in this letter. To enlarge the THz vacuum window geometric size benefiting the fabrication process, a novel strong coupling over-mode operation has been proposed and employed without introducing extra oscillation points over a broad operation band. At the same time, the monocrystalline diamond (MD) layer is used to withstand stresses during the brazing process as well as the atmospheric pressure. The window frames use an Oxygen Free Copper (OFC) - Kovar heterogeneous integrated structure, ensuring both vacuum tightness and low-loss transmission. The fabricated device demonstrated exceptional vacuum tightness, with a measured leak rate of <inline-formula> <tex-math>${6}.{95}\\\\times {10}^{\\\\text {-10}}$ </tex-math></inline-formula> Pa<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula>m3/s. The cold test result of the sealed THz MD window demonstrates a recorded low insertion loss (−3.67 dB) at 1 THz, and a 70 GHz bandwidth (0.960 THz – 1.030 THz). The cold test measurements closely match simulation predictions, validating the effectiveness of the strong coupling design in suppressing oscillatory points and the heterogeneous integrated structure in reducing the transmission loss.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"46 10\",\"pages\":\"1861-1864\"},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2025-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11130668/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11130668/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of a Low-Loss Broadband Pill-Box Window Operation Over 1THz
A low-loss broadband pill-box window for Terahertz (THz) Vacuum Electron Devices (VEDs) is proposed in this letter. To enlarge the THz vacuum window geometric size benefiting the fabrication process, a novel strong coupling over-mode operation has been proposed and employed without introducing extra oscillation points over a broad operation band. At the same time, the monocrystalline diamond (MD) layer is used to withstand stresses during the brazing process as well as the atmospheric pressure. The window frames use an Oxygen Free Copper (OFC) - Kovar heterogeneous integrated structure, ensuring both vacuum tightness and low-loss transmission. The fabricated device demonstrated exceptional vacuum tightness, with a measured leak rate of ${6}.{95}\times {10}^{\text {-10}}$ Pa$\cdot $ m3/s. The cold test result of the sealed THz MD window demonstrates a recorded low insertion loss (−3.67 dB) at 1 THz, and a 70 GHz bandwidth (0.960 THz – 1.030 THz). The cold test measurements closely match simulation predictions, validating the effectiveness of the strong coupling design in suppressing oscillatory points and the heterogeneous integrated structure in reducing the transmission loss.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.