IGZO/HfOx Heterojunction Optoelectronic Memristor With Multiwavelength Response for Neuromorphic Visual System

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-08-18 DOI:10.1109/LED.2025.3599471

Jiahui Zheng;Zhihao Tao;Zhuangzhuang Li;Xuanyu Shan;Jiulong Sun;Peng Li;Jiaqi Han;Ya Lin;Xiaoning Zhao;Zhongqiang Wang

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引用次数: 0

Abstract

Wide-bandgap metal oxide semiconductors possess suitable characteristics for neuromorphic visual systems, including high light absorption efficiency and persistent photoconductivity. However, their limited responsivity to low-energy photons has hindered applications requiring color discrimination and multi-spectral signal processing. To address this challenge, we developed an oxygen-deficient IGZO/HfOx heterojunction memristor with multiwavelength response. The device demonstrates synaptic functionality under 350-680 nm illuminations, such as excitatory postsynaptic current, paired-pulse facilitation, and image perception-memory integration. Leveraging on the optical potentiation and electrical depression characteristics, the color image recognition has achieved 85.8% accuracy in an artificial neural network. The visible-light response of IGZO is ascribed to the oxygen defect energy levels capable of trapping photo-electrons. This work provides a viable pathway for developing high-efficiency neuromorphic vision systems using wide-bandgap oxide semiconductors with full-spectrum detection capabilities.

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神经形态视觉系统中具有多波长响应的IGZO/HfOx异质结光电忆阻器

宽禁带金属氧化物半导体具有适合神经形态视觉系统的特性，包括高光吸收效率和持久的光导电性。然而，它们对低能光子的有限响应性阻碍了需要颜色识别和多光谱信号处理的应用。为了解决这一挑战，我们开发了一种具有多波长响应的缺氧IGZO/HfOx异质结忆阻器。该装置在350-680 nm光照下显示突触功能，如兴奋性突触后电流、成对脉冲促进和图像感知-记忆整合。利用光增强和电抑制特性，人工神经网络的彩色图像识别准确率达到了85.8%。IGZO的可见光响应归因于能够捕获光电子的氧缺陷能级。这项工作为利用具有全光谱检测能力的宽带隙氧化物半导体开发高效神经形态视觉系统提供了一条可行的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.